ZETEX ZXMN3A14F Technical data

查询ZXMN3A14F供应商

30V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

V

(BR)DSS

DESCRIPTION

This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.

=30V : RDS(on)=0.065 ; ID=3.9A

ZXMN3A14F

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT23 package

•

APPLICATIONS

•

DC-DC Converters

•

Power Management functions

•

Disconnect switches

•

Motor control

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMN3A14FTA 7” 8mm 3000 units
ZXMN3A14FTC 13” 8mm 10000 units

TAPE

WIDTH

QUANTITY

PER REEL

3

2

T

O

S

PINOUT

DEVICE MARKING

•

314

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SEMICONDUCTORS

ZXMN3A14F

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current @ V

= 10V; TA=25°C

GS

@VGS= 10V; TA=70°C
@VGS= 10V; TA=25°C

Pulsed Drain Current

(c)

Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T

A

=25°C

(c)

(a)

(b)

(b)
(b)
(a)

I

I
I
I
P

DSS
GS

D

DM
S
SM

D

Linear Derating Factor
Power Dissipation at T

A

=25°C

(b)

P

D

Linear Derating Factor
Operating and Storage Temperature Range T

j,Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient
Junction to Ambient

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.

(a)

(b)

R
R

⍜JA

⍜JA

30 V

⫾20 V

3.9

3.2

3.2
18 A

2.3 A
18 A

1
8

mW/°C

1.5
12

mW/°C

-55 to +150 °C

125 °C/W

83 °C/W

A
A
A

W

W

SEMICONDUCTORS

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CHARACTERISTICS

ZXMN3A14F

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SEMICONDUCTORS

ZXMN3A14F

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State

Resistance
Forward Transconductance

DYNAMIC

(1)

(1) (3)

(3)

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

SWITCHING

(2) (3)

Turn-On-Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate-Source Charge Q
Gate Drain Charge Q

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)
r
d(off)
f

g
gs
gd

30 V ID= 250␮A, VGS=0V

1 ␮A

100 nA

1.0 V

0.048

0.065

0.069

0.095

7.1 S

448 pF

82 pF
49 pF

2.4 ns

2.5 ns

13.1 ns

5.3 ns

8.6 nC

1.4 nC

VDS= 30V, VGS=0V
VGS=⫾12V, VDS=0V
ID= 250␮A, VDS=V

⍀

VGS= 10V, ID=3.2A

⍀

= 4.5V, ID=2.6A

V

GS

VDS= 15V, ID=3.2A

VDS= 15V, VGS=0V
f=1MHz

VDD= 15V, VGS= 10V

ID=1A

R

≅6.0⍀

G

VDS= 15V, VGS= 10V

=3.2A

I

D

1.8 nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge

(1)

(3)

(3)

V

SD

t

rr

Q

rr

0.85 0.95 V

13 ns

7NC

Tj=25°C, IS= (2.5)A,
V

=0V

GS

Tj=25°C, IF= (1.6)A,
di/dt=100A/␮s

GS

NOTES

(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE B - SEPTEMBER 2003

SEMICONDUCTORS

4

TYPICAL CHARACTERISTICS

ZXMN3A14F

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SEMICONDUCTORS

ZXMN3A14F

TYPICAL CHARACTERISTICS

SEMICONDUCTORS

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ZXMN3A14F

PACKAGE OUTLINE PAD LAYOUT

Controlling dimensions are in millimetres. Approximate conversions are given in inches

PACKAGE DIMENSIONS

MILLIMETRES INCHES

DIM

MIN MAX MIN MAX MIN MAX MIN MAX

A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C ᎏ 1.10 ᎏ 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM ⍜ 10⬚ TYP 10⬚ TYP

MILLIMETRES INCHES

DIM

© Zetex plc 2003

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PROVISIONAL ISSUE B - SEPTEMBER 2003

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SEMICONDUCTORS