ZETEX ZXMN3A14F Technical data
查询ZXMN3A14F供应商
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
=30V : RDS(on)=0.065 ; ID=3.9A
ZXMN3A14F
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23 package
•
APPLICATIONS
•
DC-DC Converters
•
Power Management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN3A14FTA 7” 8mm 3000 units
ZXMN3A14FTC 13” 8mm 10000 units
TAPE
WIDTH
QUANTITY
PER REEL
3
2
T
O
S
PINOUT
DEVICE MARKING
•
314
PROVISIONAL ISSUE B - SEPTEMBER 2003
1
SEMICONDUCTORS
ZXMN3A14F
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current @ V
= 10V; TA=25°C
GS
@VGS= 10V; TA=70°C
@VGS= 10V; TA=25°C
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
A
=25°C
(c)
(a)
(b)
(b)
(b)
(a)
I
I
I
I
P
DSS
GS
D
DM
S
SM
D
Linear Derating Factor
Power Dissipation at T
A
=25°C
(b)
P
D
Linear Derating Factor
Operating and Storage Temperature Range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
Junction to Ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.
(a)
(b)
R
R
⍜JA
⍜JA
30 V
⫾20 V
3.9
3.2
3.2
18 A
2.3 A
18 A
1
8
mW/°C
1.5
12
mW/°C
-55 to +150 °C
125 °C/W
83 °C/W
A
A
A
W
W
SEMICONDUCTORS
PROVISIONAL ISSUE B - SEPTEMBER 2003
2
CHARACTERISTICS
ZXMN3A14F
PROVISIONAL ISSUE B - SEPTEMBER 2003
3
SEMICONDUCTORS
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