Zetex ZXMN3A04DN8TA, ZXMN3A04DN8TC Datasheet
ZXMN3A04DN8
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
APPLICATIONS
• DC - DC Converters
=30V; R
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DS(ON)
=0.025⍀ ID=7.6A
SO8
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE TAPE WIDTH QUANTITY
ZXMN3A04DN8TA 7” 12mm 500 units
ZXMN3A04DN8TC 13” 12mm 2500 units
DEVICE MARKING
•
ZXMN
3A04D
PROVISIONAL ISSUE A - AUGUST 2001
PER REEL
Top View
1
ZXMN3A04DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current (V
=10V; TA=25°C)(b)(d)
GS
(V
=10V; TA=70°C)(b)(d)
GS
(V
=10V; TA=25°C)(a)(d)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)(d)
A
=25°C (a)(e)
A
=25°C (b)(d)
A
Operating and Storage Temperature Range T
I
P
P
P
DSS
GS
D
DM
S
SM
D
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (a)(e) R
Junction to Ambient (b)(d) R
θJA
θJA
θJA
30 V
⫾ 20
7.6
6.0
5.8
25 A
2.5 A
25 A
1.25
10
mW/°C
1.8
14
mW/°C
2.1
17
mW/°C
-55 to +150 °C
100 °C/W
70 °C/W
60 °C/W
V
A
W
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum
junction temperature. Refer to Transcient Thermal Inpedance graph.
(d) For device with one active die
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE A - AUGUST 2001
2
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