WTE SB520, SB520-T3, SB520-TB, SB530, SB530-T3 Datasheet

WTE

POWER SEMICONDUCTORS

SB520 – SB560

5.0A SCHOTTKY BARRIER RECTIFIER

Features

!

Schottky Barrier Chip

!

Guard Ring Die Construction for

Transient Protection

!

High Current Capability A B A

!

Low Power Loss, High Efficiency

!

High Surge Current Capability

!

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity
Protection Applications C

D

Mechanical Data

!

Case: Molded Plastic

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

!

Weight: 1.2 grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol SB520 SB530 SB540 SB550 SB560 Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage V
Average Rectified Output Current (Note 1) @TL = 100°C I

Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)

Forward Voltage @IF = 5.0A V

RRM

V

RWM

V

R

V

R(RMS)

O

FSM

I

FM

DO-201AD

Dim Min Max

A
B
C
D

All Dimensions in mm

@TA=25°C unless otherwise specified

20 30 40 50 60 V

14 21 28 35 42 V

0.55 0.70 V

25.4 —

8.50 9.50

1.20 1.30

5.0 5.60

5.0 A

150 A

Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T

Typical Junction Capacitance (Note 2) C
Typical Thermal Resistance Junction to Ambient R
Operating and Storage Temperature Range Tj, T

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB520 – SB560 1 of 3 © 2002 Won-Top Electronics

= 100°C

A

RM

I

j

JA



STG

550 400 pF

0.5
50

10 K/W

-65 to +150 °C

mA

5

40

(AV),

I AVERAGE FORWARD CURRENT (A)

4

3

2

1

Resistive or

Inductive Load

0

02550

T , LEAD TEMPERATURE ( C)

Fig. 1 Forward Current Derating Curve

150

120

90

10

SB520 - SB540

SB550 - SB560

1.0

T - 25 C

°

j

I Pulse Width = 300 s

F

I , INSTANTANEOUS FORWARD CURRENT (A)

75

100 125 150

L

°

0.1
0

0.2 0.4 0.6 0.8 1.0

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

F

µ

Fig. 2 Typical Forward Characteristics

Single Half-Sine-Wave

(JEDEC Method)

3000

T = 25 C

j

°

1000

SB520 - SB540

60

30

FSM

I , PEAK FORWARD SURGE CURRENT (A)

0

1 10 100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Max Non-Repetitive Peak Fwd Surge Current

100

10

1.0

0.1

0.01

T = 125 C

j

T = 75 C

j

T = 25 C

°

j

SB550 - SB560

j

C , CAPACITANCE (pF)

100

0.1

1.0 10

V , REVERSE VOLTAGE (V)

R

100

Fig. 4 Typical Junction Capacitance

°

°

0.001

R

I , INSTANTANEOUS REVERSE CURRENT (mA)

0 20 40 60 80 100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

SB520 – SB560 2 of 3 © 2002 Won-Top Electronics