WTE 1N5822-TB, 1N5822-T3, 1N5822, 1N5821-T3, 1N5821 Datasheet

WTE

POWER SEMICONDUCTORS

1N5820 – 1N5822

3.0A SCHOTTKY BARRIER RECTIFIER

Features

!

Schottky Barrier Chip

!

Guard Ring Die Construction for

Transient Protection

!

High Current Capability A B A

!

Low Power Loss, High Efficiency

!

High Surge Current Capability

!

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity
Protection Applications C

D

Mechanical Data

!

Case: Molded Plastic

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

!

Weight: 1.2 grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol 1N5820 1N5821 1N5822 Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage V
Average Rectified Output Current (Note 1) @TL = 90°C I

Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method) @T

Forward Voltage @IF = 3.0A
@I

Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T

Typical Junction Capacitance (Note 2) C

= 75°C

L

= 9.4A

F

= 100°C

A

RRM

V

RWM

V

R

V

R(RMS)

O

FSM

I

FM

V

RM

I

j

DO-201AD

Dim Min Max

A
B
C
D

All Dimensions in mm

@TA=25°C unless otherwise specified

20 30 40 V

14 21 28 V

0.475

0.850

25.4 —

8.50 9.50

1.20 1.30

5.0 5.60

3.0 A

80 A

0.50

0.90

2.0
20

250 pF

0.525

0.950

V

mA

Typical Thermal Resistance Junction to Ambient R
Operating and Storage Temperature Range Tj, T

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

1N5820 – 1N5822 1 of 3 © 2002 Won-Top Electronics

JA



STG

20 K/W

-65 to +150 °C

4

Single Phase Half-Wave

g

S

O

S

O

C

)

60 Hz Resistive or Inductive

Load 9.5mm Lead Length

30

3

2

1

(AV),

I AVERAGEOUTPUT CURRENT (A)

0

10 50 100 150

T , LEAD TEMPERATURE(ºC)

L

Fig. 1 Forward Current Derating Curve

100

80

10

URRENT (A)

RWARD
F

1.0

U

TANTANE

0.1

F

I,IN

0.1 0.3 0.5 0.7 0.9 1.1
V , INSTANTANEOUSFORWARD VOLTAGE(V

F

Pulse Width = 300 s

2% Duty Cycle

Fig. 2 Typical Forward Voltage Characteristics

1000

T = 25ºC

j

T = 25ºC

j

f = 1MHz

µ

60

100

40

20

8.3ms Single HalfSine-Wave
JEDECMethod

0

FSM

I , PEA K FORWARD SURGE CURRENT (A )

110100

NUMBEROFCYCLESAT 60 Hz

Fi

.3 PeakForwardSurge Current

j

C, JUNCTION CAPACITANCE (pF)

10

0.1 1.0 10 100
V , REVERSEVOLTAGE(V)

R

Fig. 4 Typical Junction Capacitance

1N5820 – 1N5822 2 of 3 © 2002 Won-Top Electronics