WTE 1N5819-TB, 1N5819-T3, 1N5819, 1N5817-TB, 1N5817-T3 Datasheet
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WTE
POWER SEM ICOND UCTOR S
1N5817 – 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
!
Guard Ring Die Construction for
Transient Protection
!
High Current Capability A B A
!
Low Power Loss, High Efficiency
!
High Surge Current Capability
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications C
D
Mechanical Data
!
Case: Molded Plastic
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 0.34 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
Average Rectified Output Current (Note 1) @TL = 90°C I
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @IF = 1.0A
@I
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T
Typical Junction Capacitance (Note 2) C
= 3.0A
F
= 100°C
A
RRM
V
RWM
V
R
V
R(RMS)
O
FSM
I
FM
V
RM
I
j
DO-41
Dim Min Max
A
B
C
D
All Dimensions in mm
@TA=25°C unless otherwise specified
20 30 40 V
14 21 28 V
0.450
0.750
25.4 —
4.06 5.21
0.71 0.864
2.00 2.72
1.0 A
25 A
0.550
0.875
1.0
10
110 pF
0.60
0.90
V
mA
Typical Thermal Resistance Junction to Lead (Note 1) R
Operating and Storage Temperature Range Tj, T
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1N5817 – 1N5819 1 of 3 © 2002 Won-Top Electronics
JL
STG
60 K/W
-65 to +150 °C
1.0
0
C
C
C
S
O
S
O
)
30
0.8
0.6
0.4
0.2
(AV)
I , AVERAGE OUTPUT CURRENT (A)
Single Pulse Half-Wave
60 HzResistive or Inductive Load
0
10 40 60 80 100 120 140150
T , LEAD TEMPERATURE (ºC)
L
Fig. 1 Forward Current Derating Curve
25
RWARD CURRENT (A)
F
U
TANTANE
F
I, N
1000
10
1.0
0.1
1N5817
1N5818
1N5819
T = 25ºC
j
Pulse Width = 300 s
2% Duty Cycle
0
0.5 1.0 1.5 2.0 2.5
V , INSTANTANEOUS FORWARDVOLTAGE(V
F
Fig. 2 Ty pical Forward Characteristics
T = 25ºC
j
f = 1MHz
µ
20
15
ITANCE(pF)
100
10
APA
,
j
5
8.3ms Single Half Sine-Wave
FSM
I , PEAK FORWARD SURGECURRENT (A)
0
Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current
JEDECMethod
1 10 100
NUMBEROF CYCLES AT 60 Hz
10
0.1 1.0 10 10
V , REVERSEVOLTAGE(V)
R
Fig. 4 Typical Junctio n Capacitance
1N5817 – 1N5819 2 of 3 © 2002 Won-Top Electronics
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