WTE 1N4007G-TB, 1N4007G, 1N4006G-TB, 1N4006G-T3, 1N4006G Datasheet
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WTE
POWER SEMICONDUCTORS
1N4001G – 1N4007G
1.0A GLASS PASSIVATED RECTIFIER
Features
!
Glass Passivated Die Construction
!
Low Forward Voltage Drop
!
High Current Capability A B A
!
High Reliability
!
High Surge Current Capability
Mechanical Data
!
Case: Molded Plastic D
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 0.35 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
RRM
V
RWM
V
R
V
R(RMS)
1N
4001G1N4002G1N4003G1N4004G1N4005G1N4006G1N4007G
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
Dim Min Max
A
B
C
D
All Dimensions in mm
@TA=25°C unless otherwise specified
DO-41
25.4 —
4.06 5.21
0.71 0.864
2.00 2.72
Unit
C
Average Rectified Output Current
(Note 1) @T
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage @IF = 1.0A V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T
Typical Junction Capacitance (Note 2) C
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range T
Storage Temperature Range T
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N4001G – 1N4007G 1 of 3 © 2002 Won-Top Electronics
= 75°C
A
= 100°C
A
R
I
I
FSM
RM
I
STG
O
FM
1.0 A
30 A
1.0 V
5.0
50
j
JA
j
8.0 pF
100 K/W
-65 to +175 °C
-65 to +175 °C
µA
1.0
0.8
10
0.6
0.4
0.2
0
40 60 80 100 120 140 160 180
(AV)
I , AVERAGE FORWARD RECTIFIED CURRENT (A)
T , AMBIENT TEMPERATURE (ºC)
A
Fig. 1 Forward Current Derating Curve
50
40
1.0
0.1
T = 25ºC
j
PULSE WIDTH = 300µs
2% DUTY CYCLE
F
0.01
I , INSTANTANEOUS FORWARD CURRENT (A)
0.6 0.8 1.0 1.2 1.4 1.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
100
T = 25ºC
j
f = 1MHz
30
20
10
8.3ms Single half sine-wave
FSM
I , PEAK FORWARD SURGE CURRENT (A)
0
JEDEC Method
1.0 10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
10
j
C , CAPACITANCE (pF)
1.0
1.0 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance
1N4001G – 1N4007G 2 of 3 © 2002 Won-Top Electronics
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