Winbond Electronics W24257AJ-8N Datasheet
W24257AJ-8N
CS
WE
OE
32K × 8 HIGH SPEED CMOS STATIC RAM
GENERAL DESCRIPTION
The W24257AJ-8N is a high speed, low power CMOS static RAM organized as 32768 × 8 bits that
operates on a single 5-volt power supply. This device is manufactured using Winbond's high
performance CMOS technology.
FEATURES
• High speed access time: 8 nS (max.)
• Single +5V power supply
• Fully static operation
PIN CONFIGURATIONS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28-pin
SOJ
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
DD
• All inputs and outputs directly TTL compatible
• Three-state outputs
• Available packages: 28-pin 300 mil SOJ
BLOCK DIAGRAM
DD
V
SS
V
A0
.
A14
CS
OE
WE
DECODER
.
CONTROL
CORE
ARRAY
DATA I/O
I/O1
I/O8
.
.
PIN DESCRIPTION
SYMBOL DESCRIPTION
A0−A14
I/O1−I/O8
Address Inputs
Data Inputs/Outputs
Chip Select Input
Write Enable Input
Output Enable Input
VDD Power Supply
VSS Ground
Publication Release Date: February 1998
- 1 - Revision A2
W24257AJ-8N
CS
CS
CS
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER RATING UNIT
Supply Voltage to VSS Potential -0.5 to +7.0 V
Input/Output to VSS Potential -0.5 to VDD +0.5 V
Allowable Power Dissipation 1.0 W
Storage Temperature -65 to +150
Operating Temperature 0 to +55
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
°C
°C
TRUTH TABLE
CS OE WE MODE
H X X Not Selected High Z ISB, ISB1
L H H Output Disable High Z IDD
L L H Read Data Out IDD
L X L Write Data In IDD
I/O1−I/O8
VDD CURRENT
OPERATING CHARACTERISTICS
(VDD = 5V ±5%, VSS = 0V, TA = 0 to 55° C)
PARAMETER SYM. TEST CONDITIONS MIN. TYP. MAX. UNIT
Input Low Voltage VIL - -0.5 - +0.8 V
Input High Voltage VIH - +2.2 - VDD
+0.5
Input Leakage Current ILI VIN = VSS to VDD -10 - +10
Output Leakage
Current
Output Low Voltage VOL IOL = +8.0 mA - - 0.4 V
Output High Voltage VOH IOH = -4.0 mA 2.4 - - V
Operating Power
Supply Current
Standby Power Supply
Current
Note: Typical characteristics are at VDD = 5V, TA = 25° C.
ILO
IDD
ISB
ISB1
VI/O = VSS to VDD, CS = VIH
or OE = VIH or WE = VIL
= VIL, I/O = 0 mA,
Cycle = Min., Duty = 100%
= VIH
Cycle = Min., Duty = 100%
≥ VDD -0.2V
-10 - +10
180 mA
- - 30 mA
- - 10 mA
V
µA
µA
- 2 -
W24257AJ-8N
CAPACITANCE
(VDD = 5V, TA = 25° C, f = 1 MHz)
PARAMETER SYM. CONDITIONS MAX. UNIT
Input Capacitance CIN VIN = 0V 8 pF
Input/Output Capacitance CI/O VOUT = 0V 10 pF
Note: These parameters are sampled but not 100% tested.
THERMAL RESISTANCE
PARAMETER SYM. CONDITIONS MAX. UNIT
Junction to Case Thermal Resistance
Junction to Ambient Thermal
θJC
θJA
A. F. R. = 1m/sec, TA = 25° C
A. F. R. = 1m/sec, TA = 25° C
Resistance
Note: These parameters are only applied to "TSOP" and "SOJ" package types.
AC TEST CONDITIONS
PARAMETER CONDITIONS
Input Pulse Levels 0V to 3V
Input Rise and Fall Times 5 nS
Input and Output Timing Reference Level 1.5V
Output Load CL = 30 pF, IOH/IOL = -4 mA/8 mA
20
60
°C/W
°C/W
AC TEST LOADS AND WAVEFORM
R1 480 ohm
5V
OUTPUT
30 pF
Including
Jig and
Scope
R2
255 ohm
3.0V
0V
5 nS
R1 480 ohm
TOLZ TCHZ T
,
,
5 pF
Including
Jig and
Scope
OHZTWHZ
, ,
R2
255 ohm
,
OW
T
90% 90%
10%
10%
5V
OUTPUT
(For TCLZ
5 nS
Publication Release Date: February 1998
- 3 - Revision A2
)
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