Vishay VS-ST303SP Series Data Sheet

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TO-209AE (TO-118)

PRODUCT SUMMARY

I

T(AV)

V

DRM/VRRM

V

TM

I

at 50 Hz 3000 A

TSM

I

at 60 Hz 3150 A

TSM

I

GT

T

J

Package TO-209AE (TO-118)

Diode variation Single SCR

Inverter Grade Thyristors

(Stud Version), 300 A

FEATURES

• Center amplifying gate

• High surge current capability

• Low thermal impedance

• High speed performance

• Compression bonding

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

•Inverters

300 A

400 V, 1200 V

2.16 V

200 mA

-40 °C to 125 °C

• Choppers

• Induction heating

• All types of force-commutated converters








VS-ST303SP Series

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 7950

60 Hz 8320

50 Hz 316

60 Hz 288

300 A

65 °C

471

400 to 1200 V

10/20 μs

-40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-ST303S

V

VOLTAGE

CODE

04 400 500

12 1200 1300

DRM/VRRM

, MAXIMUM REPETITIVE

PEAK VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

I

DRM/IRRM

T

= TJ MAXIMUM

J

A

kA2s

MAXIMUM AT

mA

5008 800 900

Revision: 12-Mar-14

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VS-ST303SP Series

180° el

I

TM

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CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

50 Hz 670 470 1050 940 5240 4300

400 Hz 480 330 1021 710 1800 1270

1000 Hz 230 140 760 470 730 430

2500 Hz 35 - 150 - 90 -

Recovery voltage V

R

Voltage before turn-on V

D

50 50 50

V

DRM

V

DRM

Rise of on-state current di/dt 50 - - A/μs

Case temperature 406540654065°C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 μF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one half cycle, 
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 3160 kA2s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope
resistance

Maximum holding current I

Typical latching current I

I

T(AV)

T(RMS)

I

TSM

TM

T(TO)1

T(TO)2

t1

r

t2

H

L

180° conduction, half sine wave

DC at 45 °C case temperature 471

t = 10 ms

t = 8.3 ms 8320

t = 10 ms

t = 8.3 ms 7000

t = 10 ms

t = 8.3 ms 288

t = 10 ms

t = 8.3 ms 204

No voltage
reapplied

100 % V

RRM 

reapplied

No voltage
reapplied

100 % V

RRM 

reapplied

ITM = 1255 A, TJ = TJ maximum, 
t

= 10 ms sine wave pulse

p

(16.7 % x  x I
(I >  x I

T(AV)

(16.7 % x  x I

(I >  x I

T(AV)

< I <  x I

T(AV)

T(AV)

), TJ = TJ maximum 1.46

< I <  x I

T(AV)

T(AV)

), TJ = TJ maximum 0.56

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000

Vishay Semiconductors

I

TM

100 µs

V

DRM

7950

6690

Sinusoidal half wave,
initial T

= TJ maximum

J

2.16

), TJ = TJ maximum 1.44

), TJ = TJ maximum 0.57

A

V

300 A

65 °C

316

224

kA2s

m

mA

A

V

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

minimum

Maximum turn-off time

maximum 20

Revision: 12-Mar-14

dI/dt

d

t

q

= TJ maximum, V

T

J

I

= 2 x dI/dt

TM

TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5  source

TJ = TJ maximum, 
I

= 550 A, commutating dI/dt = 40 A/μs

TM

V

= 50 V, tp = 500 μs, dV/dt = 200 V/μs

R

2

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= Rated V

DRM

DRM



DRM

, ITM = 50 A DC, tp = 1 μs

1000 A/μs

0.80

10

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μs

VS-ST303SP Series

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BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

= TJ maximum, linear to 80 % V

T

Maximum critical rate of rise of off-state voltage dV/dt

Maximum peak reverse and off-state leakage
current

I

RRM

I

DRM

,

J

higher value available on request

TJ = TJ maximum, rated V

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage +V

Maximum peak negative gate voltage -V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp  5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 

TJ = TJ maximum, rated V

Vishay Semiconductors

, 

DRM/VRRM

applied

DRM

DRM

applied 50 mA

500 V/μs

60

10

10 A

20

5

200 mA

3V

20 mA

0.25 V

W

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 0.10

Mounting surface, smooth, flat and greased 0.03

Mounting force, ± 10 % Non-lubricated threads

Approximate weight 535 g

Case style See dimensions - link at the end of datasheet TO-209AE (TO-118)

R

CONDUCTION

thJ-hs

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.011 0.008

120° 0.013 0.014

90° 0.017 0.018

T

J

60° 0.025 0.026

30° 0.041 0.042

Note

• The table above shows the increment of thermal resistance R



when devices operate at different conduction angles than DC

thJ-hs



-40 to 125

-40 to 150

48.5

(425)

(lbf · in)

= TJ maximum K/W

°C

K/W

N · m

Revision: 12-Mar-14

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 94375