Vishay VS-ST303SP Series Data Sheet

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TO-209AE (TO-118)

PRODUCT SUMMARY

I

T(AV)

V

DRM/VRRM

V

TM

I

at 50 Hz 3000 A

TSM

I

at 60 Hz 3150 A

TSM

I

GT

T

J

Package TO-209AE (TO-118)

Diode variation Single SCR

Inverter Grade Thyristors

(Stud Version), 300 A

FEATURES

• Center amplifying gate

• High surge current capability

• Low thermal impedance

• High speed performance

• Compression bonding

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

•Inverters

300 A

400 V, 1200 V

2.16 V

200 mA

-40 °C to 125 °C

• Choppers

• Induction heating

• All types of force-commutated converters








VS-ST303SP Series

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 7950

60 Hz 8320

50 Hz 316

60 Hz 288

300 A

65 °C

471

400 to 1200 V

10/20 μs

-40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-ST303S

V

VOLTAGE

CODE

04 400 500

12 1200 1300

DRM/VRRM

, MAXIMUM REPETITIVE

PEAK VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

I

DRM/IRRM

T

= TJ MAXIMUM

J

A

kA2s

MAXIMUM AT

mA

5008 800 900

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VS-ST303SP Series

180° el

I

TM

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CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

50 Hz 670 470 1050 940 5240 4300

400 Hz 480 330 1021 710 1800 1270

1000 Hz 230 140 760 470 730 430

2500 Hz 35 - 150 - 90 -

Recovery voltage V

R

Voltage before turn-on V

D

50 50 50

V

DRM

V

DRM

Rise of on-state current di/dt 50 - - A/μs

Case temperature 406540654065°C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 μF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one half cycle, 
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 3160 kA2s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope
resistance

Maximum holding current I

Typical latching current I

I

T(AV)

T(RMS)

I

TSM

TM

T(TO)1

T(TO)2

t1

r

t2

H

L

180° conduction, half sine wave

DC at 45 °C case temperature 471

t = 10 ms

t = 8.3 ms 8320

t = 10 ms

t = 8.3 ms 7000

t = 10 ms

t = 8.3 ms 288

t = 10 ms

t = 8.3 ms 204

No voltage
reapplied

100 % V

RRM 

reapplied

No voltage
reapplied

100 % V

RRM 

reapplied

ITM = 1255 A, TJ = TJ maximum, 
t

= 10 ms sine wave pulse

p

(16.7 % x  x I
(I >  x I

T(AV)

(16.7 % x  x I

(I >  x I

T(AV)

< I <  x I

T(AV)

T(AV)

), TJ = TJ maximum 1.46

< I <  x I

T(AV)

T(AV)

), TJ = TJ maximum 0.56

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000

Vishay Semiconductors

I

TM

100 µs

V

DRM

7950

6690

Sinusoidal half wave,
initial T

= TJ maximum

J

2.16

), TJ = TJ maximum 1.44

), TJ = TJ maximum 0.57

A

V

300 A

65 °C

316

224

kA2s

m

mA

A

V

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

minimum

Maximum turn-off time

maximum 20

Revision: 12-Mar-14

dI/dt

d

t

q

= TJ maximum, V

T

J

I

= 2 x dI/dt

TM

TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5  source

TJ = TJ maximum, 
I

= 550 A, commutating dI/dt = 40 A/μs

TM

V

= 50 V, tp = 500 μs, dV/dt = 200 V/μs

R

2

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= Rated V

DRM

DRM



DRM

, ITM = 50 A DC, tp = 1 μs

1000 A/μs

0.80

10

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μs

VS-ST303SP Series

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BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

= TJ maximum, linear to 80 % V

T

Maximum critical rate of rise of off-state voltage dV/dt

Maximum peak reverse and off-state leakage
current

I

RRM

I

DRM

,

J

higher value available on request

TJ = TJ maximum, rated V

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage +V

Maximum peak negative gate voltage -V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp  5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 

TJ = TJ maximum, rated V

Vishay Semiconductors

, 

DRM/VRRM

applied

DRM

DRM

applied 50 mA

500 V/μs

60

10

10 A

20

5

200 mA

3V

20 mA

0.25 V

W

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 0.10

Mounting surface, smooth, flat and greased 0.03

Mounting force, ± 10 % Non-lubricated threads

Approximate weight 535 g

Case style See dimensions - link at the end of datasheet TO-209AE (TO-118)

R

CONDUCTION

thJ-hs

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.011 0.008

120° 0.013 0.014

90° 0.017 0.018

T

J

60° 0.025 0.026

30° 0.041 0.042

Note

• The table above shows the increment of thermal resistance R



when devices operate at different conduction angles than DC

thJ-hs



-40 to 125

-40 to 150

48.5

(425)

(lbf · in)

= TJ maximum K/W

°C

K/W

N · m

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25 50 75 100 125

Maximum Allowa b le Ambient Temperature (°C)

R

=

0

.

0

1

K

/

W

­D

e

l

t

a

R

t

h

S

A

0

.

3

K

/

W

0

.

5

K

/

W

0

.

2

K

/

W

0

.

1

6

K

/

W

0

.

1

2

K

/

W

0

.

0

6

K/

W

0

.

0

8

K

/

W

0

.

0

3

K

/

W

0

100

200

300

400

500

600

0 50 100 150 200 250 300

180°
120°

90°
60°
30°

RM S L i m i t

Conduc tion Angle

Maximum Ave rag e On-state Powe r Loss (W)

Average On-state Current (A)

ST303S Se ries
T = 12 5 ° C

J

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

R

=

0

.

0

1

K

/

W

­D

e

l

t

a

R

t

h

S

A

0

.

3

K

/

W

0

.

5

K

/

W

0

.

2

K

/

W

0

.

1

2

K

/

W

0

.

0

6

K

/

W

0

.

0

3

K

/

W

0

100

200

300

400

500

600

700

800

900

0 50 100150200250300350400450500

DC
180°
120°

90°

60°

30°

RM S Lim it

Conduc tion Period

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

ST3 03 S Se r i e s
T = 125°C

J

VS-ST303SP Series

Vishay Semiconductors

130

120

110

ST303S Se ries
R ( D C ) = 0 .1 0 K / W

thJC

130

120

110

ST3 03 S Se r i e s
R ( DC) = 0.10 K/ W

thJC

100

60°

90°

120°

Conduction Period

180°

100

90

30°

80

70

60

Maximum Allowable Case Temperature (°C)

0 50 100 150 200 250 300 350

Conduc tion Angle

60°

90°

120°

Average On-state Current (A)

180°

90

80

70

30°

60

50

40

Maximum Allowable Case Temperature (°C)

0100200300400500

Average On-stat e Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

DC

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Fig. 3 - On-State Power Loss Characteristics

Fig. 4 - On-State Power Loss Characteristics

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3000

3500

4000

4500

5000

5500

6000

6500

7000

110100

Numb er Of Equal Amp litude Half Cyc le Current Pulses (N)

Pe a k Ha lf Sine Wave On-st ate Current (A)

Initial T = 125°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

J

ST3 0 3 S Se r i e s

At Any Rate d Load Condition And With

Rat e d V A p plie d Follo win g Surg e.

RRM

3000

3500

4000

4500

5000

5500

6000

6500

7000

7500

8000

0.01 0.1 1

Pulse Train Duration (s)

Versus Pulse Train Duration. Control

Of Cond uction May Not Be Maintained.

Peak Half Sine Wave On-state Current (A)

Init ial T = 125°C

No Voltage Reapplied
Rated V Reapplied

RRM

J

ST3 0 3 S Se r i e s

Maximum Non Repetitive Surge Current

80

100

120

140

160

180

200

220

240

260

280

300

320

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of On-state Current - di/dt (A/µs)

I = 500 A

300 A
200 A
100 A

50 A

Maximum Reve rse Rec overy Charge - Qrr (µC)

ST3 0 3 S Se r i e s
T = 12 5 ° C

J

TM

Fig. 5 - Maximum Non-Repetitive Surge Current

VS-ST303SP Series

Vishay Semiconductors

1

St e a d y St a t e V a l u e

R = 0. 10 K/ W

thJC

0.001

Transient Thermal Impedance Z (K/ W)

Fig. 8 - Thermal Impedance Z

thJC

(DC Operation)

0.1

0.01

ST3 0 3S Se r i e s

0.001 0.01 0.1 1 10

Sq u a r e Wa v e Pu l se D u ra t i o n ( s )

Characteristics

thJC

Fig. 6 - Maximum Non-Repetitive Surge Current

10000

1000

T = 2 5 ° C

Instantaneous On-state Current (A)

100

12345678

Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

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J

T = 12 5° C

J

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ST3 03 S Se r i e s

Fig. 9 - Reverse Recovered Charge Characteristics

180

160

140

I = 500 A

TM

300 A
200 A
100 A

50 A

120

100

80

60

ST3 03 S Se r ie s
T = 125 ° C

J

40

20

Maximum Reverse Recovery Current - Irr (A)

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of On-stat e Current - di/ dt (A/ µs)

Fig. 10 - Reverse Recovery Current Characteristics

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1E4

1E0

1E1

1E2

1E3

1E4

1E1 1E2 1E3 1E4

100

1500

200

Pu lse Ba se w id t h ( µs)

Peak On-state Current (A)

2500

400

1000

50 Hz

500

Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V

s
s
D

DRM

ST3 03 S Se r ie s
Trapezoidal pulse
T = 40 ° C
di/dt = 50A/µs

C

2000

1E1 1E2 1E3 1E4

50 Hz

400

100

1000

1500

200

Pulse Ba se w id t h ( µs)

500

Snubber circuit
R = 1 0 o hm s
C = 0.47 µF
V = 80% V

s
s
D

DRM

ST3 0 3S Se ri e s
Trapezoidal pulse
T = 65°C

di/dt = 50A/µs

C

2000

1E0

1E1

1E2

1E3

1E4

1E1 1E2 1E3 1E4

50 Hz

400

2500

100

1000

1500

200

Pu lse Ba se w id t h ( µs)

Peak On-sta te Current (A)

2000

Snub ber c ircuit
R = 10 o h m s
C = 0.47 µF
V = 80% V

s
s
D

DRM

ST3 03 S Se ri e s
Trapezoidal pulse
T = 40 ° C
d i/ d t = 100A / µs

C

tp

500

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VS-ST303SP Series

Vishay Semiconductors

100

200

400

500

2000

1500

1000

tp

Snub be r circ uit
R = 10 ohm s

s

C = 0.47 µF

s

V = 80% V

D

ST3 03 S Series
Sinusoida l pulse
T = 40°C

C

Pea k O n - sta te Curren t (A)

1E3

1E2

2500

1E1

1E1 1E2 1E3 1E4

Pu l se Ba sew i d t h ( µs)

Fig. 11 - Frequency Characteristics

50 Hz

DRM

50 Hz

100

200

400

500

1000

tp

Sn ub b e r c i rc u i t
R = 10 ohms

s

C = 0.47 µF

s

V = 80% V

D

ST3 03 S Se r ie s
Si n u so i d a l p u l s e
T = 65 ° C

C

DRM

1500

1 E1 1 E2 1 E3 1 E4

Pu lse Ba se w id t h ( µs)

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Fig. 12 - Frequency Characteristics

1 E1 1 E2 1 E3 1 E4

Fig. 13 - Frequency Characteristics

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500

1000

1500

2000

Pu l se Ba se w id t h ( µs)

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200

400

ST3 03 S Series
Trapezoidal pulse
T = 6 5 ° C

tp

di / d t = 100A/ µs

50 Hz

100

Sn u b b e r c i rc u i t
R = 10 ohm s

s

C = 0.47 µF

s

V = 80% V

D

C

DRM

www.vishay.com

0.1

1

10

100

0.001 0.01 0.1 1 10 100

VGD

IG D

(b)

(a)

Tj =2 5 ° C

Tj = 12 5 ° C

Tj= -4 0 ° C

(1)

(2)

Insta nt a ne ou s Ga te Curre nt (A )

In st a n t a n e o u s G a t e V o l t a g e ( V)

Rectangular gate pulse
a) Recommended load line for

b) Recommended load line for
<=30% ra te d di/ d t : 10V, 10ohms

rat ed d i/ dt : 20V, 10ohms; tr<=1 µs

tr<=1 µs

(1) PGM = 10W, t p = 20ms
(2) PGM = 20W, t p = 10ms
(3) PGM = 40W, t p = 5ms
(4) PGM = 60W, t p = 3.3ms

(3)

De vic e: ST303S Series

(4)

Frequency Limited by PG(AV)

VS-ST303SP Series

Vishay Semiconductors

1E5

1E4

2

0.5

0.4

tp

1

ST30 3 S Se r ie s
Sin uso idal pulse

1E3

1E2

Peak On-state Current (A)

1E1

1 E1 1 E2 1 E3 1 E4

20 joules p er pulse

10

5

3

Pulse Basew id th ( µ s)

Fig. 14 - Maximum On-State Energy Power Loss Characteristics

ST30 3 S Se ri e s
Recta ngular pulse

tp

di/dt = 50A/µs

20 jou le s p er p ulse

10

5

3

2

1

0.5

0.4

1E1 1E2 1E3 1E4

Pulse Ba se w id t h ( µs)

Fig. 15 - Gate Characteristics

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- Thyristor

- Essential part number

- 3 = Fast turn-off

- S = Compression bonding stud

- Voltage code x 100 = V

RRM

- P = Stud base 3/4" 16UNF-2A

- Reapplied dV/dt code (for tq test condition)

-tq code

- 0 = Eyelet terminals

1 = Fast-on terminals

dV/dt - tq combinations available

dV/dt (V/µs) 200

10

t

q

(µs)

FN

20 FK

20

FK

up to 800 V

t

q

(µs)

only for
1000/1200 V

(see Voltage Ratings table)

(gate and auxiliary cathode leads)

(gate and auxiliary cathode leads)

Device code

5

1

32 4

6 7 8 9 10 11

ST 30 3 S 12 P F K 0 P

1

- Vishay Semiconductors product

11

- None = Standard production

- P = Lead (Pb)-free

VS-

2

3

4

5

6

7

9

10

8

ORDERING INFORMATION TABLE

VS-ST303SP Series

Vishay Semiconductors

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95080

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DIMENSIONS in millimeters (inches)

Red cathode

Red silicon rubber

10.5 (0.41) NOM.

245 (9.65) ± 10 (0.39)

White gate

4.3 (0.17) DIA.

Ceramic housing

White shrink

47 (1.85)

MAX.

245 (9.65)

255 (10.04)

38 (1.50)

MAX. DIA.

22 (0.87) MAX.

21 (0.82) MAX.

SW 45

Flexible leads

4.5 (0.18) MAX.

C.S. 50 mm

2

(0.078 s.i.)

Red shrink

49 (1.92) MAX.

3/4"16 UNF-2A

(1)

27.5 (1.08)

MAX.

Fast-on terminals

AMP. 280000-1

REF-250

9.5 (0.37) MIN.

22 (0.86) MIN.

Outline Dimensions

Vishay Semiconductors

TO-209AE (TO-118)

Note

(1)

For metric device: M24 x 1.5 - length 21 (0.83) maximum

Document Number: 95080 For technical questions, contact: [e-mail]

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Revision: 02-Aug-07 1

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(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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Document Number: 91000