Vishay VS-ST303C Series Data Sheet
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TO-200AB (E-PUK)
PRODUCT SUMMARY
Package TO-200AB (E-PUK)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
at 50 Hz 7950 A
TSM
I
at 60 Hz 8320 A
TSM
I
GT
T
C/Ths
400 V, 800 V, 1000 V, 1200 V
Inverter Grade Thyristors
(PUK Version), 620 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case TO-200AB (E-PUK)
• High surge current capability
• Low thermal impedance
• High speed performance
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
620 A
2.16 V
200 mA
55 °C
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
VS-ST303C Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
Note
•t
= 10 μs to 20 μs for 400 V to 800 V devices
q
t
= 15 μs to 30 μs for 1000 V to 1200 V devices
q
T
hs
T
hs
50 Hz 7950
60 Hz 8320
50 Hz 316
60 Hz 289
Range 10 to 30 μs
620 A
55 °C
1180 A
25 °C
A
kA2s
400 to 1200 V
-40 to 125 °C
Revision: 20-Dec-13
1
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94373
180° el
I
TM
VS-ST303C Series
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST303C..C
VOLTAGE
CODE
V
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
04 400 500
08 800 900
10 1000 1100
12 1200 1300
V
RSM
CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
50 Hz 1314 1130 2070 1940 6930 6270
400 Hz 1260 1040 2190 1880 3440 2960
1000 Hz 900 700 1900 1590 1850 1540
2500 Hz 340 230 910 710 740 560
Recovery voltage V
Voltage before turn-on V
r
d
V
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF
TM
50 50 50
DRM
V
DRM
Vishay Semiconductors
, MAXIMUM
V
100 µs
V
DRM
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
I
TM
MAXIMUM
mA
50
A
V
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3160 klA2√s
Maximum peak on-state voltage V
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum holding current I
Typical latching current I
I
T(AV)
T(RMS)
I
TSM
TM
T(TO)1
T(TO)2
t1
t2
H
L
Revision: 20-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 1180
t = 10 ms
t = 8.3 ms 8320
t = 10 ms
t = 8.3 ms 7000
t = 10 ms
t = 8.3 ms 289
t = 10 ms
t = 8.3 ms 204
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
ITM = 1255 A, TJ = TJ maximum,
t
= 10 ms sine wave pulse
p
(16.7 % x π x I
(I > π x I
T(AV)
(16.7 % x π x I
(I > π x I
T(AV)
T(AV)
< I < π x I
), TJ = TJ maximum 1.44
T(AV)
), TJ = TJ maximum 1.48
T(AV)
< I < π x I
), TJ = TJ maximum 0.57
T(AV)
), TJ = TJ maximum 0.56
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
620 (230) A
55 (85) °C
7950
6690
316
224
2.16
Document Number: 94373
A
kA2s
V
mΩ
mA
VS-ST303C Series
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SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned on current
Typical delay time t
minimum
Maximum turn-off time
(1)
maximum 30
dI/dt
t
d
q
T
= TJ maximum, V
J
I
= 2 x dI/dt
TM
TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5 Ω source
= Rated V
DRM
DRM
, ITM = 50 A DC, tp = 1 μs
DRM
TJ = TJ maximum,
I
= 550 A, commutating dI/dt = 40 A/μs
TM
V
= 50 V, tp = 500 μs, dV/dt: See table in device code
R
Note
(1)
tq = 10 μs to 20 μs for 400 V to 800 V devices; tq = 15 μs to 30 μs for 1000 V to 1200 V devices
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
T
= TJ maximum, linear to 80 % V
Maximum critical rate of rise of off-state voltage dV/dt
I
Maximum peak reverse and off-state leakage current
RRM
I
DRM
,
J
higher value available on request
TJ = TJ maximum, rated V
Vishay Semiconductors
DRM/VRRM
,
DRM
applied 50 mA
1000 A/µs
0.83
10
500 V/µs
µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
Maximum DC gate currrent required to trigger I
Maximum DC gate voltage required to trigger V
Maximum DC gate current not to trigger I
Maximum DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
GD
GD
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp ≤ 5 ms
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
TJ = TJ maximum, rated V
DRM
applied
60
10
W
10 A
20
5
V
200 mA
3V
20 mA
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.09
DC operation double side cooled 0.04
DC operation single side cooled 0.020
DC operation double side cooled 0.010
Mounting force, ± 10 %
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)
-40 to 125
-40 to 150
9800
(1000)
°C
K/W
N
(kg)
Revision: 20-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94373
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