Vishay VS-ST303C Series Data Sheet

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TO-200AB (E-PUK)

PRODUCT SUMMARY

Package TO-200AB (E-PUK)

Diode variation Single SCR

I

T(AV)

V

DRM/VRRM

V

TM

I

at 50 Hz 7950 A

TSM

I

at 60 Hz 8320 A

TSM

I

GT

T

C/Ths

400 V, 800 V, 1000 V, 1200 V

Inverter Grade Thyristors

(PUK Version), 620 A

FEATURES

• Metal case with ceramic insulator

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

• Guaranteed high dI/dt

• International standard case TO-200AB (E-PUK)

• High surge current capability

• Low thermal impedance

• High speed performance

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance

620 A

2.16 V

200 mA

55 °C

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

•Inverters

• Choppers

• Induction heating

• All types of force-commutated converters

VS-ST303C Series

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

Note

•t

= 10 μs to 20 μs for 400 V to 800 V devices

q

t

= 15 μs to 30 μs for 1000 V to 1200 V devices

q

T

hs

T

hs

50 Hz 7950

60 Hz 8320

50 Hz 316

60 Hz 289

Range 10 to 30 μs

620 A

55 °C

1180 A

25 °C

A

kA2s

400 to 1200 V

-40 to 125 °C

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180° el

I

TM

VS-ST303C Series

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ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-ST303C..C

VOLTAGE

CODE

V

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

V

04 400 500

08 800 900

10 1000 1100

12 1200 1300

V

RSM

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

50 Hz 1314 1130 2070 1940 6930 6270

400 Hz 1260 1040 2190 1880 3440 2960

1000 Hz 900 700 1900 1590 1850 1540

2500 Hz 340 230 910 710 740 560

Recovery voltage V

Voltage before turn-on V

r

d

V

Rise of on-state current dI/dt 50 - - A/µs

Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF

TM

50 50 50

DRM

V

DRM

Vishay Semiconductors

, MAXIMUM

V

100 µs

V

DRM

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

I

TM

MAXIMUM

mA

50

A

V

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

Maximum peak, one half cycle,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3160 klA2√s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum holding current I

Typical latching current I

I

T(AV)

T(RMS)

I

TSM

TM

T(TO)1

T(TO)2

t1

t2

H

L

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180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 1180

t = 10 ms

t = 8.3 ms 8320

t = 10 ms

t = 8.3 ms 7000

t = 10 ms

t = 8.3 ms 289

t = 10 ms

t = 8.3 ms 204

No voltage
reapplied

100 % V
reapplied

RRM

No voltage
reapplied

100 % V
reapplied

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

ITM = 1255 A, TJ = TJ maximum,
t

= 10 ms sine wave pulse

p

(16.7 % x π x I
(I > π x I

T(AV)

(16.7 % x π x I
(I > π x I

T(AV)

T(AV)

< I < π x I

), TJ = TJ maximum 1.44

T(AV)

), TJ = TJ maximum 1.48

T(AV)

< I < π x I

), TJ = TJ maximum 0.57

T(AV)

), TJ = TJ maximum 0.56

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000

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620 (230) A

55 (85) °C

7950

6690

316

224

2.16

Document Number: 94373

A

kA2s

V

mΩ

mA

VS-ST303C Series

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SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned on current

Typical delay time t

minimum

Maximum turn-off time

(1)

maximum 30

dI/dt

t

d

q

T

= TJ maximum, V

J

I

= 2 x dI/dt

TM

TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5 Ω source

= Rated V

DRM

DRM

, ITM = 50 A DC, tp = 1 μs

DRM

TJ = TJ maximum,
I

= 550 A, commutating dI/dt = 40 A/μs

TM

V

= 50 V, tp = 500 μs, dV/dt: See table in device code

R

Note

(1)

tq = 10 μs to 20 μs for 400 V to 800 V devices; tq = 15 μs to 30 μs for 1000 V to 1200 V devices

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

T

= TJ maximum, linear to 80 % V

Maximum critical rate of rise of off-state voltage dV/dt

I

Maximum peak reverse and off-state leakage current

RRM

I

DRM

,

J

higher value available on request

TJ = TJ maximum, rated V

Vishay Semiconductors

DRM/VRRM

,

DRM

applied 50 mA

1000 A/µs

0.83

10

500 V/µs

µs

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated V

DRM

applied

60

10

W

10 A

20

5

V

200 mA

3V

20 mA

0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.09

DC operation double side cooled 0.04

DC operation single side cooled 0.020

DC operation double side cooled 0.010

Mounting force, ± 10 %

Approximate weight 83 g

Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)

-40 to 125

-40 to 150

9800

(1000)

°C

K/W

N

(kg)

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0

500 600 700

Average On-State Current (A)

100 300

200 400

Maximum Allowable

Heatsink Temperature (°C)

20

30

40

50

60

70

80

90

100

110

120

130

ST303C..C Series
(Single side cooled)
R

thJ-hs

(DC) = 0.09 K/W

Ø

Conduction period

30°

60°

90°

120°

180°

DC

Average On-State Current (A)

Maximum Allowable

Heatsink Temperature (°C)

0

600 800

1000

1200

200 400

20

30

40

50

60

70

80

90

100

110

120

130

ST303C..C Series
(Double side cooled)
R

thJ-hs

(DC) = 0.04 K/W

Ø

Conduction period

30°

60°

DC

180°

90°

120°

VS-ST303C Series

Vishay Semiconductors

ΔR

CONDUCTION

thJ-hs

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.010 0.010 0.007 0.007

120° 0.012 0.012 0.012 0.013

90° 0.015 0.015 0.016 0.017

60° 0.022 0.022 0.023 0.023

30° 0.036 0.036 0.036 0.037

Note

• The table above shows the increment of thermal resistance R

130

120

110

100

90

80

70

Maximum Allowable

Heatsink Temperature (°C)

60

50

40

0

100

50

ST303C..C Series
(Single side cooled)
R

60°30° 90°

150 200

(DC) = 0.09 K/W

thJ-hs

Ø

Conduction angle

120°

250 300 350 400

180°

Average On-State Current (A)

Fig. 1 - Current Ratings Characteristics

TEST CONDITIONS UNITS

= TJ max. K/W

T

J

when devices operate at different conduction angles than DC

thJ-hs

130

120

110

100

90

80

70

60

50

Maximum Allowable

40

Heatsink Temperature (°C)

30

20

0

30°

100 200

ST303C..C Series
(Double side cooled)

(DC) = 0.04 K/W

R

thJ-hs

Conduction angle

60°

90°

400300 500 600 700

Average On-State Current (A)

Fig. 3 - Current Ratings Characteristics

Ø

180°

120°

800

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Fig. 4 - Current Ratings Characteristics

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VS-ST303C Series

Vishay Semiconductors

2000

1800

1600

1400

1200

1000

Power Loss (W)

Maximum Average On-State

180°
120°
90°
60°
30°

800

600

400

200

0

100 300200 400

0

RMS limit

500 600 700 800

Average On-State Current (A)

Fig. 5 - On-State Power Loss Characteristics

2800

DC

2400

2000

1600

1200

Power Loss (W)

800

180°
120°
90°
60°
30°

RMS limit

Ø

Conduction angle

ST303C..C Series

= 125 °C

T

J

Ø

Conduction period

8000

7500

7000

6500

6000

5500

5000

4500

On-State Current (A)

Peak Half Sine Wave

4000

3500

3000

0.01 0.1 1

Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained

No voltage reapplied
Rated V

ST303C..C Series

Initial TJ = 125 °C

RRM

Pulse Train Duration (s)

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

10 000

1000

TJ = 25 °C

TJ = 125 °C

reapplied

400

Maximum Average On-State

0

200

0

400 600 800 1000 1200

ST303C..C Series

= 125 °C

T

J

Average On-State Current (A)

Fig. 6 - On-State Power Loss Characteristics

7500

7000

6500

6000

5500

5000

4500

On-State Current (A)

4000

Peak Half Sine Wave

3500

3000

At any rated load condition and with
rated V

ST303C..C Series

1 10 100

applied following surge

RRM

Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

ST303C..C Series

Instantaneous On-State Current (A)

100

012345678

Instantaneous On-State Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

1

ST303C..C Series

0.1

Transient Thermal

-

0.01

Impedance (K/W)

thJ-hs

Z

0.001

0.01 0.1 1 100.001

Steady state value
R

thJ-hs

(Single side cooled)
R

thJ-hs

(Double side cooled)
(DC operation)

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

= 0.09 K/W

= 0.04 K/W

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2010 30 50 70 9040 60 80 100

dI/dt - Rate of Fall of On-State Current (A/µs)

Q

rr

- Maximum Reverse Recovery Charge (µC)

80

100

120

140

160

180

200

220

240

260

280

300

320

ST303C..C Series
T

J

= 125 °C

ITM = 500 A
I

TM

= 300 A

I

TM

= 200 A

I

TM

= 100 A

I

TM

= 50 A

100

10 100 1000 10 000

1000

10 000

Pulse Basewidth (µs)

Peak On-State Current (A)

Snubber circuit
R

s

= 10 Ω

C

s

= 0.47 µF

V

D

= 80 % V

DRM

t

p

ST303C..C Series
Sinusoidal pulse
T

C

= 40 °C

50 Hz

100

200

500

400

1000

1500

2500

3000

2000

100

10 100 1000 10 000

1000

10 000

Pulse Basewidth (µs)

Peak On-State Current (A)

t

p

ST303C..C Series
Sinusoidal pulse
T

C

= 55 °C

50 Hz

100

500

400

1000

1500

2500

2000

3000

Snubber circuit
R

s

= 10 Ω

C

s

= 0.47 µF

V

D

= 80 % V

DRM

200

10 100 1000 10 000

100

1000

10 000

Pulse Basewidth (µs)

Peak On-State Current (A)

Snubber circuit
R

s

= 10 Ω

C

s

= 0.47 µF

V

D

= 80 % V

DRM

ST303C..C Series
Trapezoidal pulse
T

C

= 40 °C

dI/dt = 50 A/µs

t

p

50 Hz

100

500

400

1000

1500

2500

2000

3000

200

VS-ST303C Series

Vishay Semiconductors

180

160

140

120

ITM = 500 A

= 300 A

I

TM

= 200 A

I

TM

= 100 A

I

TM

= 50 A

I

TM

100

80

60

ST303C..C Series

= 125 °C

T

J

40

20

- Maximum Reverse Recovery Current (A)

rr

I

20 30 50 70 9010 40 60 80 100

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovered Current Characteristics

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Fig. 13 - Frequency Characteristics

10 000

Peak On-State Current (A)

Fig. 14 - Frequency Characteristics

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Snubber circuit

= 10 Ω

R

s

= 0.47 µF

C

1000

100

s

= 80 % V

V

D

2500

3000

1500

DRM

2000

1000

500

t

p

50 Hz

200

100

400

ST303C..C Series
Trapezoidal pulse

= 55 °C

T

C

dI/dt = 50 A/µs

10 100 1000 10 000

Pulse Basewidth (µs)

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10 100 1000 10 000

100

1000

10 000

Pulse Basewidth (µs)

Peak On-State Current (A)

Snubber circuit
R

s

= 10 Ω

C

s

= 0.47 µF

V

D

= 80 % V

DRM

ST303C..C Series
Trapezoidal pulse
T

C

= 40 °C

dI/dt = 100 A/µs

t

p

50 Hz

100

500

400

1000

1500

2500

2000

3000

200

Pulse Basewidth (µs)

Peak On-State Current (A)

10 100 1000 10 000

10

100

1000

10 000

100 000

t

p

ST303C..C Series
Sinusoidal pulse

0.4

0.5

2

5

3

1

10

20 joules per pulse

0.1

1

10

100

0.001

Instantaneous Gate Current (A)

Instantaneous Gate Voltage (V)

0.01 0.1 1 10 100

V

GD

I

GD

(b)

(1) (2) (3) (4)

Device: ST303C..C Series

Frequency limited by P

G(AV)

(1) PGM = 10 W, tp = 20 ms
(2) P

GM

= 20 W, tp = 10 ms

(3) P

GM

= 40 W, tp = 5 ms

(4) P

GM

= 60 W, tp = 3.3 ms

Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t

r

≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
t

r

≤ 1 µs

(a)

T

J

= 40 °C

T

J

= 25 °C

T

J

= 125 °C

10 000

1000

Peak On-State Current (A)

Fig. 15 - Frequency Characteristics

VS-ST303C Series

Vishay Semiconductors

Snubber circuit

= 10 Ω

R

s

= 0.47 µF

C

s

= 80 % V

V

D

100

2000

2500

3000

1500

DRM

500

1000

400

t

p

10 100 1000 10 000

Pulse Basewidth (µs)

50 Hz

100

200

ST303C..C Series
Trapezoidal pulse

= 55 °C

T

C

dI/dt = 100 A/µs

100 000

t

p

10 000

1000

100

0.5

Peak On-State Current (A)

10

10 100 1000 10 000

Fig. 16 - Maximum On-State Energy Power Loss Characteristics

ST303C..C Series
Rectangular pulse
dI/dt = 50 A/µs

10

3

2

1

0.4

Pulse Basewidth (µs)

20 joules per pulse

5

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Fig. 17 - Gate Characteristics

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ORDERING INFORMATION TABLE

VS-ST303C Series

Vishay Semiconductors

Device code

VS- ST 30 3 C 12 C H K 1 -

51 32 4 6 7 8 9 10 11

1

- Vishay Semiconductors product

2

- Thyristor

3

- Essential part number

- 3 = Fast turn-off

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

RRM

(see Voltage Ratings table)

- C = PUK case TO-200AB (E-PUK)

7

8

- Reapplied dV/dt code (for tq test condition)

9

-tq code

- 0 = Eyelet terminals

10

(gate and aux. cathode unsoldered leads)

1 = Fast-on terminals

(gate and aux. cathode unsoldered leads)

2 = Eyelet terminals

(gate and aux. cathode soldered leads)

3 = Fast-on terminals

(gate and aux. cathode soldered leads)

11

- Critical dV/dt:

None = 500 V/µs (standard value)

L = 1000 V/µs (special selection)

t

up to 800 V

t

only for
1000 V/1200 V

* Standard part number.
All other types available only on request.

dV/dt - tq combinations available

dV/dt (V/µs) 20 50 100 200 400

q

(µs)

10
12
15 CL DL EL FL* HL
20 CK DK EK FK* HK

q

(µs)

15
18
20 CK DK EK FK* HK
25 CJ DJ EJ FJ* HJ
30

CN DN EN

FN* HN

CM DM EM FM HM

CL - ­CP DP - -

--

-

-DHEHFHHH

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95075

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DIMENSIONS in millimeters (inches)

TO-200AB (E-PUK)

Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum

25.3 (0.99)
DIA. MAX.

25.3 (0.99)
DIA. MAX.

Gate terminal for

1.47 (0.06) DIA.
pin receptacle

Outline Dimensions

Vishay Semiconductors

0.3 (0.01) MIN.

14.1/15.1

(0.56/0.59)

0.3 (0.01) MIN.

40.5 (1.59) DIA. MAX.

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

6.5 (0.26)

4.75 (0.19)

25° ± 5°

42 (1.65) MAX.

28 (1.10)

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95075 For technical questions, contact: [e-mail]
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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Document Number: 91000