Vishay VS-ST303CL Series Data Sheet
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TO-200AC (B-PUK)
PRODUCT SUMMARY
Package TO-200AC (B-PUK)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
at 50 Hz 7950 A
TSM
I
at 60 Hz 8320 A
TSM
I
GT
T
C/Ths
400 V, 800 V, 1000 V, 1200 V
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case TO-200AC (B-PUK)
• High surge current capability
• Low thermal impedance
• High speed performance
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
515 A
2.16 V
200 mA
55 °C
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
VS-ST303CL Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
Note
= 10 μs to 20 μs for 400 V to 800 V devices
•t
q
t
= 15 μs to 30 μs for 1000 V to 1200 V devices
q
Revision: 15-Apr-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
515 A
T
hs
T
hs
50 Hz 7950
60 Hz 8320
50 Hz 316
60 Hz 289
Range 10 to 30 μs
1
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
55 °C
995 A
25 °C
400 to 1200 V
-40 to 125 °C
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
A
kA2s
Document Number: 94374
VS-ST303CL Series
100 µs
I
TM
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST303C..L
VOLTAGE
CODE
V
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
04 400 500
08 800 900
10 1000 1100
12 1200 1300
V
RSM
CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
180° el
50 Hz 1130 950 1800 1540 5660 4990
400 Hz 1010 820 1850 1570 2830 2420
1000 Hz 680 530 1560 1300 1490 1220
2500 Hz 230 140 690 510 540 390
Recovery voltage V
R
Voltage before turn-on V
D
50 50 50
V
DRM
Rise of on-state current dI/dt 50 - - A/μs
Heatsink temperature 405540554055°C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/μF
V
DRM
I
TM
Vishay Semiconductors
, MAXIMUM
V
V
DRM
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
MAXIMUM
mA
50
A
V
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state
current at heatsink temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3160 kA2√s
Maximum peak on-state voltage V
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope
resistance
High level value of forward slope
resistance
Maximum holding current I
Typical latching current I
I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 995
I
TSM
TM
T(TO)1
T(TO)2
r
t1
r
t2
H
L
t = 10 ms
t = 8.3 ms 8320
t = 10 ms
t = 8.3 ms 7000
t = 10 ms
t = 8.3 ms 289
t = 10 ms
t = 8.3 ms 204
ITM = 1255 A, TJ = TJ maximum,
t
= 10 ms sine wave pulse
p
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
reapplied
T(AV)
), TJ = TJ maximum 1.48
T(AV)
T(AV)
), TJ = TJ maximum 0.56
T(AV)
RRM
< I < π x I
< I < π x I
), TJ = TJ maximum 1.44
T(AV)
), TJ = TJ maximum 0.57
T(AV)
515 (190) A
55 (85) °C
7950
6690
316
224
kA
2.16
mΩ
mA
A
2
V
s
Revision: 15-Apr-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94374
VS-ST303CL Series
www.vishay.com
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned on current
Typical delay time t
minimum
Maximum turn-off time
(1)
maximum 30
dI/dt
d
t
q
= TJ maximum, V
T
J
I
= 2 x dI/dt
TM
TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5 Ω source
TJ = TJ maximum,
I
= 550 A, commutating dI/dt = 40 A/μs
TM
V
= 50 V, tp = 500 μs, dV/dt: See table in device code
R
= rated V
DRM
DRM
, ITM = 50 A DC, tp = 1 μs
DRM
Note
(1)
tq = 10 μs to 20 μs for 400 V to 800 V devices; tq = 15 μs to 30 μs for 1000 V to 1200 V devices
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
= TJ maximum, linear to 80 % V
T
Maximum critical rate of rise of off-state voltage dV/dt
Maximum peak reverse and off-state leakage
current
I
RRM
I
DRM
,
J
higher value available on request
TJ = TJ maximum, rated V
Vishay Semiconductors
DRM/VRRM
,
DRM
applied 50 mA
1000 A/μs
0.83
10
500 V/μs
μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
Maximum DC gate currrent required to trigger I
Maximum DC gate voltage required to trigger V
Maximum DC gate current not to trigger I
Maximum DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
GD
GD
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp ≤ 5 ms
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
TJ = TJ maximum, rated V
DRM
applied
60
10
W
10 A
20
5
V
200 mA
3V
20 mA
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.11
DC operation double side cooled 0.05
DC operation single side cooled 0.011
DC operation double side cooled 0.005
Mounting force, ± 10 %
Approximate weight 250 g
Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)
-40 to 125
-40 to 150
9800
(1000)
°C
K/W
N
(kg)
Revision: 15-Apr-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94374
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