Vishay VS-ST300SPbF Series Data Sheet
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TO-209AE (TO-118)
VS-ST300SPbF Series
Phase Control Thyristors
(Stud Version), 300 A
FEATURES
• Center amplifying gate
• International standard case TO-209AE (TO-118)
• Hermetic metal case with ceramic insulator
• Threaded studs UNF 3/4"-16UNF-2A or
ISO M24 x 1.5
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Vishay Semiconductors
PRODUCT SUMMARY
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
Package TO-209AE (TO-118)
Diode variation Single SCR
300 A
400 V, 2000 V
1.28 V
200 mA
-40 °C to 125 °C
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 8000
60 Hz 8380
50 Hz 320
60 Hz 292
Typical 100 μs
300 A
75 °C
470
A
kA2s
400 to 2000 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
VS-ST300S
Revision: 12-Mar-14
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VOLTAGE
CODE
04 400 500
08 800 900
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE
V
V
, MAXIMUM NON-REPETITIVE
RSM
1
PEAK VOLTAGE
V
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I
DRM/IRRM
T
= TJ MAXIMUM
J
Document Number: 94406
MAXIMUM AT
mA
50
VS-ST300SPbF Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 3200 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
I
T(AV)
T(RMS)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave 300 A
DC at 64 °C case temperature 470
t = 10 ms
t = 8.3 ms 8380
t = 10 ms
t = 8.3 ms 7040
t = 10 ms
t = 8.3 ms 292
t = 10 ms
t = 8.3 ms 207
(16.7 % x x I
(I > x I
(16.7 % x x I
(I > x I
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
), TJ = TJ maximum 0.98
T(AV)
), TJ = TJ maximum 0.73
T(AV)
T(AV)
T(AV)
RRM
< I < x I
< I < x I
Ipk = 940 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.66 V
TJ = 25 °C, anode supply 12 V resistive load
Vishay Semiconductors
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.97
T(AV)
), TJ = TJ maximum 0.74
T(AV)
75 °C
8000
6730
320
226
600
1000
A
kA2s
V
m
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 , t
T
= TJ maximum, anode voltage 80 % V
J
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
DRM
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
V
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
R
1 μs
r
, TJ = 25 °C
DRM
1000 A/μs
1.0
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
,
RRM
I
DRM
Revision: 12-Mar-14
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
2
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DRM
500 V/μs
applied 30 mA
Document Number: 94406
μs
VS-ST300SPbF Series
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TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
G(AV)
GM
GT
GD
TJ = TJ maximum, tp 5 ms 10.0
GM
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp 5 ms 3.0 A
GM
TJ = TJ maximum, tp 5 ms
GM
TJ = -40 °C
= 25 °C 100 200
J
= 125 °C 50 -
T
J
TJ = -40 °C 2.5 -
GT
= 25 °C 1.8 3
J
T
= 125 °C 1.1 -
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum
GD
value which will not trigger any
unit with rated V
cathode applied
Vishay Semiconductors
anode to
DRM
VALUES
TYP. MAX.
20
5.0
200 -
10 mA
0.25 V
UNITS
W
V
mAT
VT
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case R
Maximum thermal resistance, case to heatsink R
J
Stg
thJC
thCS
DC operation 0.10
Mounting surface, smooth, flat and greased 0.03
Mounting torque, ± 10 % Non-lubricated threads
Approximate weight 535 g
Case style See dimensions - link at the end of datasheet TO-209AE (TO-118)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.011 0.008
120° 0.013 0.014
T
90° 0.017 0.018
= TJ maximum K/W
J
60° 0.025 0.026
30° 0.041 0.042
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
-40 to 125
-40 to 150
48.5
(425)
(lbf · in)
°C
K/W
N · m
Revision: 12-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
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Document Number: 94406
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