Vishay VS-ST300CL Series Data Sheet
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TO-200AC (B-PUK)
PRODUCT SUMMARY
Package TO-200AC (B-PUK)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
Phase Control Thyristors
(Hockey PUK Version), 560 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
560 A
400 V to 2000 V
2.18 V
100 mA
-40 °C to 125 °C
VS-ST300CL Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST300C..L
Revision: 15-Apr-14
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VOLTAGE
CODE
04 400 500
08 800 900
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
560 A
T
hs
T
hs
50 Hz 8000
60 Hz 8380
50 Hz 320
60 Hz 292
Typical 100 µs
V
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE
NON-REPETITIVE PEAK VOLTAGE
V
1
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55 °C
1115 A
25 °C
kA2s
400 to 2000 V
-40 to 125 °C
V
, MAXIMUM
RSM
V
I
DRM/IRRM
AT T
MAXIMUM mA
Document Number: 94405
A
MAXIMUM
= TJ
J
50
VS-ST300CL Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3200 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
I
T(AV)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 1115
t = 10 ms
t = 8.3 ms 8380
t = 10 ms
t = 8.3 ms 7040
t = 10 ms
t = 8.3 ms 292
t = 10 ms
t = 8.3 ms 207
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
), TJ = TJ maximum 0.98
T(AV)
), TJ = TJ maximum 0.73
T(AV)
T(AV)
T(AV)
RRM
< I < π x I
< I < π x I
Ipk = 1635 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.18 V
TJ = 25 °C, anode supply 12 V resistive load
Vishay Semiconductors
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.97
T(AV)
), TJ = TJ maximum 0.74
T(AV)
560 (275) A
55 (75) °C
8000
6730
320
226
kA2s
mΩ
600
1000
mA
A
V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
≤ 1 μs
r
DRM
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
, TJ = 25 °C
DRM
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
V
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs
R
1000 A/µs
1.0
µs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
RRM,
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/µs
applied 50 mA
Revision: 15-Apr-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 94405
VS-ST300CL Series
www.vishay.com
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
G(AV)
GM
GT
GD
TJ = TJ maximum, tp ≤ 5 ms 10.0
GM
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp ≤ 5 ms 3.0 A
GM
TJ = TJ maximum, tp ≤ 5 ms
GM
TJ = - 40 °C
= 25 °C 100 200
J
T
= 125 °C 50 -
J
TJ = - 40 °C 2.5 -
T
GT
= 25 °C 1.8 3.0
J
T
= 125 °C 1.1 -
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/
voltage not to trigger is the
TJ = TJ maximum
GD
maximum value which will not
trigger any unit with rated V
anode to cathode applied
Vishay Semiconductors
DRM
VALUES
TYP. MAX.
20
5.0
200 -
10.0 mA
0.25 V
UNITS
mAT
W
V
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.11
DC operation double side cooled 0.05
DC operation single side cooled 0.011
DC operation double side cooled 0.006
Mounting force, ± 10 %
Approximate weight 250 g
Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)
ΔR
CONDUCTION ANGLE
CONDUCTION
thJ-hs
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS UNITS
180° 0.012 0.010 0.008 0.008
120° 0.014 0.015 0.014 0.014
90° 0.018 0.018 0.019 0.019
= TJ maximum K/W
T
J
60° 0.026 0.027 0.027 0.028
30° 0.045 0.046 0.046 0.046
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJ-hs
-40 to 125
-40 to 150
9800
(1000)
°C
K/W
N
(kg)
Revision: 15-Apr-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94405
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