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Standard Recovery Diodes
PRODUCT SUMMARY
I
F(AV)
Package DO-205AA (DO-8)
Circuit configuration Single diode
VS-45L(R), VS-150K(R), VS-150KS(R) Series
Vishay Semiconductors
(Stud Version), 150 A
FEATURES
• Alloy diode
• High current carrying capability
• High surge current capabilities
• Stud cathode and stud anode version
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
150 A
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Battery chargers
• Welders
• Machine tool controls
• High power drives
• Medium traction applications
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
t
I
V
RRM
T
J
T
C
50 Hz 3570
60 Hz 3740
50 Hz 64
60 Hz 58
Range 100 to 600 V
150 A
150 °C
235 A
-40 to 200 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-45L(R)
VS-150K(R)
VS-150KS(R)
, MAXIMUM REPETITIVE
V
VOLTAGE
CODE
10 100 200
20 200 300
30 300 400
40 400 500
60 600 720
RRM
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
A
kA2s
MAXIMUM
RRM
AT T
= 175 °C
J
mA
35
Revision: 25-Nov-13
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Document Number: 93489
VS-45L(R), VS-150K(R), VS-150KS(R) Series
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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
Maximum RMS forward current I
Maximum peak, one cycle forward,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 640 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
r
f1
r
f2
FM
180° conduction, half sine wave
DC at 142 °C case temperature 235
t = 10 ms
t = 8.3 ms 3740
t = 10 ms
t = 8.3 ms 3140
t = 10 ms
t = 8.3 ms 58
t = 10 ms
t = 8.3 ms 41
(16.7 % x x I
(I > x I
(16.7 % x x I
(I > x I
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
reapplied
100 % V
reapplied
< I < x I
F(AV)
), TJ = TJ maximum 0.83
F(AV)
< I < x I
F(AV)
), TJ = TJ maximum 0.91
F(AV)
RRM
), TJ = TJ maximum 0.67
F(AV)
), TJ = TJ maximum 1.42
F(AV)
Ipk = 471 A, TJ = 25 °C, tp = 10 ms sinusoidal wave 1.33 V
Vishay Semiconductors
150 A
150 °C
3570
3000
= TJ maximum
J
64
45
A
kA2s
V
mW
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
minimum
Mounting torque
45L
maximum 17.0 (150)
minimum
maximum 15.0 (132)
minimum
Mounting torque
150K
150KS
maximum 14.1 (125)
minimum
maximum 12.5 (110)
Approximate weight
Case style
150K-A DO-205AA (DO-8)
150KS B-42
45L
T
, T
J
Stg
R
thJC
DC operation 0.25
-40 to 200 °C
K/W
R
thCS
Mounting surface, smooth, flat and greased 0.10
Not lubricated threads
14.1 (125)
N · m
Lubricated threads
Not lubricated threads
12.2 (108)
11.3 (100)
(lbf · in)
N · m
Lubricated threads
9.5 (85)
(lbf · in)
100 g
3.5 oz.
DO-205AC (DO-30)
See dimensions - link at the end of datasheet
Revision: 25-Nov-13
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93489
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
140
150
160
170
180
190
200
0 50 100 150 200 250
DC
30°
60°
90°
120°
180°
Maximum Allowable Case Temp erature (°C)
Conduction Period
Average Forward Current (A)
45L..., 150... Serie s
R ( DC) = 0.25 K/W
thJC
25 50 75 100 125 150 175 200
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
1
K
/
W
D
e
l
t
a
R
0
.
2
K
/
W
0.6
K
/
W
0
.
8
K
/
W
1
.
5
K
/
W
2
K
/
W
3
K
/
W
1
K
/
W
0
.
4
K
/
W
0
.
3
K
/
W
t
h
SA
160
0
20
40
60
80
100
120
140
160
180
0
40 80 120
RM S Lim it
180°
120°
90°
60°
30°
Cond uction Angle
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
45L..., 150... Series
T = 200°C
J
VS-45L(R), VS-150K(R), VS-150KS(R) Series
Vishay Semiconductors
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.031 0.023
120° 0.038 0.040
90° 0.048 0.053
= TJ maximum K/W
T
J
60° 0.071 0.075
30° 0.120 0.121
Note
• The table above shows the increment of thermal resistance R
200
190
180
170
160
150
140
Maximum Allowable Case Temperature (°C)
0 20406080100120140160
45L...,150... Series
R ( DC) = 0.25 K/W
thJC
Conduction Angle
30°
60°
90°
Average Forward Current (A)
120°
180°
when devices operate at different conduction angles than DC
thJC
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Revision: 25-Nov-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 3 - Forward Power Loss Characteristics
3
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 93489