Vishay VS-150EBU04 Data Sheet

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Cathode Anode

PowerTab

®

VS-150EBU04

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 150 A FRED Pt

PRODUCT SUMMARY

Package PowerTab

I

F(AV)

V

R

V

at I

F

F

t

(typ.) See recovery table

rr

T

max. 175 °C

J

Diode variation Single die

150 A

400 V

1.3 V

®

FEATURES

• Ultrafast recovery time

• 175 °C max. operating junction temperature

• Screw mounting only

• Designed and qualified according to
JEDEC-JESD47

• Compliant to RoHS Directive 2002/95/EC

• PowerTab

BENEFITS

• Reduced RFI and EMI

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

®

DESCRIPTION/APPLICATIONS

These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.

®

package

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current I

Maximum repetitive forward current I

Operating junction and storage
temperatures

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

Revision: 16-Jun-11

R

F(AV)

FSM

FRM

T

, T

J

V

BR

V

R

F

R

T

S

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TC = 104 °C 150

TC = 25 °C 1500

Square wave, 20 kHz 300

Stg

,

IR = 200 μA 400 - -

IF = 150 A - 1.07 1.3

I

= 150 A, TJ = 175 °C - 0.9 1.1

F

I

= 150 A, TJ = 125 °C - 0.96 1.17

F

VR = VR rated - - 50 μA

T

= 150 °C, VR = VR rated - - 4 mA

J

VR = 400 V - 100 - pF

Measured lead to lead 5 mm from package body - 3.5 - nH

1

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400 V

ASingle pulse forward current I

- 55 to 175 °C

Document Number: 93003

V

VS-150EBU04

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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - - 60

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

= 25 °C

J

= 125 °C - 172 -

T

J

TJ = 25 °C - 11 -

T

= 125 °C - 20 -

J

= 150 A

I

F

= 200 V

V

R

dI

/dt = 200 A/μs

F

TJ = 25 °C - 490 -

T

= 125 °C - 1740 -

J

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Thermal resistance,
junction to case

Thermal resistance,
junction to heatsink

Weight

Mounting torque

Marking device Case style PowerTab

- - 0.35

R

thJC

Mounting surface, flat, smooth and greased - 0.2 -

R

thCS

®

Vishay Semiconductors

-93-

- - 5.02 g

-0.18- oz.

1.2

(10)

-

2.4

(20)

150EBU04

nsT

A

nC

K/W

N · m

(lbf · in)

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Forward Voltage Drop - VFM (V)

Instantaneous Forward Current - I

F

(A)

1

10

100

1000

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

T = 175˚C

T = 125˚C

T = 25˚C

J

J

J

Reverse Voltage - VR (V)

Junction Capacitance - C

T

(pF)

10

100

1000

10000

10 100 1000

T = 25˚C

J

VS-150EBU04

Vishay Semiconductors

1000

T = 175˚C

100

(µA)

R

10

1

0.1

Reverse Current - I

0.01

0.001
0100200300400

Reverse Voltage - VR (V)

J

125˚C

25˚C

Fig. 1 - Maximum Forward Voltage Drop Characteristics

(°C/W)

thJC

Thermal Impedance Z

0.01

Fig. 1 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 2 - Typical Junction Capacitance vs.

Reverse Voltage

1

D = 0.50

0.1

D = 0.20
D = 0.10

D = 0.05
D = 0.02
D = 0.01

Single Pulse

(Thermal Resistance)

P

DM

t

1

t

2

Notes:

1. Duty factor D = t1/ t 2

2. Peak Tj = Pdm x ZthJC + Tc

0.00001 0.0001 0.001 0.01 0.1 1

t1, Rectangular Pulse Duration (Seconds)

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Fig. 2 - Maximum Thermal Impedance Z

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Characteristics

thJC

Document Number: 93003

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Average Power Loss ( Watts )

Average Forward Current - IF

(AV)

(A)

0

50

100

150

200

250

300

0 50 100 150 200 250

DC

RMS Limit

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC

trr ( ns )

diF/dt (A/µs )

50

100

150

200

250

0001001

IF = 150A
IF = 75A

Vr = 200V
Tj = 125˚C
Tj = 25˚C

Qrr ( nC )

diF/dt (A/µs )

0

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

0001001

IF = 150A

IF = 75A

Vr = 200V
Tj = 125˚C
Tj = 25˚C

180

160

140

120

100

Square wave (D = 0.50)
Rated Vr applied

80

60

Allowable Case Temperature (°C)

see note (1)

40

0 50 100 150 200 250

Average Forward Current - I

DC

VS-150EBU04

Vishay Semiconductors

F

(A)

(AV)

Fig. 3 - Maximum Allowable Case Temperature vs.

Average Forward Current

Fig. 3 - Forward Power Loss Characteristics

Fig. 4 - Typical Reverse Recovery Time vs. dI

Fig. 5 - Typical Stored Charge vs. dI

/dt

F

/dt

F

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

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) x R

x VFM at (I

F(AV)

REV

;

thJC

/D) (see fig. 6);

F(AV)

R

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Document Number: 93003

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Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

L = 70 μH

= 200 V

V

R

VS-150EBU04

Vishay Semiconductors

0.01 Ω

D.U.T.

dIF/dt

adjust

G

D

IRFP250

S

Fig. 9 - Reverse Recovery Parameter Test Circuit

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Fig. 10 - Reverse Recovery Waveform and Definitions

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Document Number: 93003

VS-150EBU04

Device code

2 - Current rating (150 = 150 A)

1 - Vishay Semiconductors product

3

- Single diode

4

- PowerTab® (ultrafast/hyperfast only)

5

- Ultrafast recovery

6

- Voltage rating (04 = 400 V)

621 43 5

150VS- E B U 04

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ORDERING INFORMATION TABLE

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95240

Part marking information www.vishay.com/doc?95370

Application note www.vishay.com/doc?95179

Vishay Semiconductors

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Document Number: 93003

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Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

15.90 (0.62)

15.60 (0.61)

15.60 (0.61)

14.80 (0.58)

4.00 (0.15)

5.20 (0.20)

8.45 (0.33)

8.20 (0.32)

Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)

4.95 (0.19)

4.75 (0.18)

4.20 (0.16)

5.45 REF.

(0.21 REF.)

PowerTab

Lead 1

12.40 (0.48)

12.10 (0.47)

Lead 2

4.95 (0.19)

Lead assignments

Lead 1 = Cathode

Lead 2 = Anode

1.35 (0.05)

1.20 (0.04)

3.09 (0.12)

3.00 (0.11)

0.60 (0.02)

0.40 (0.01)

®

Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)

18.25 (0.71)

18.00 (0.70)

1.30 (0.05)

1.10 (0.04)

27.65 (1.08)

27.25 (1.07)

12.20 (0.48)

12.00 (0.47)

39.8 (1.56)

39.6 (1.55)

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