Vishay VS-150EBU04 Data Sheet
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Cathode Anode
PowerTab
®
VS-150EBU04
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 150 A FRED Pt
PRODUCT SUMMARY
Package PowerTab
I
F(AV)
V
R
V
at I
F
F
t
(typ.) See recovery table
rr
T
max. 175 °C
J
Diode variation Single die
150 A
400 V
1.3 V
®
FEATURES
• Ultrafast recovery time
• 175 °C max. operating junction temperature
• Screw mounting only
• Designed and qualified according to
JEDEC-JESD47
• Compliant to RoHS Directive 2002/95/EC
• PowerTab
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
®
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
®
package
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Operating junction and storage
temperatures
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Revision: 16-Jun-11
R
F(AV)
FSM
FRM
T
, T
J
V
BR
V
R
F
R
T
S
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TC = 104 °C 150
TC = 25 °C 1500
Square wave, 20 kHz 300
Stg
,
IR = 200 μA 400 - -
IF = 150 A - 1.07 1.3
I
= 150 A, TJ = 175 °C - 0.9 1.1
F
I
= 150 A, TJ = 125 °C - 0.96 1.17
F
VR = VR rated - - 50 μA
T
= 150 °C, VR = VR rated - - 4 mA
J
VR = 400 V - 100 - pF
Measured lead to lead 5 mm from package body - 3.5 - nH
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
400 V
ASingle pulse forward current I
- 55 to 175 °C
Document Number: 93003
V
VS-150EBU04
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - - 60
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
= 125 °C - 172 -
T
J
TJ = 25 °C - 11 -
T
= 125 °C - 20 -
J
= 150 A
I
F
= 200 V
V
R
dI
/dt = 200 A/μs
F
TJ = 25 °C - 490 -
T
= 125 °C - 1740 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
Thermal resistance,
junction to heatsink
Weight
Mounting torque
Marking device Case style PowerTab
- - 0.35
R
thJC
Mounting surface, flat, smooth and greased - 0.2 -
R
thCS
®
Vishay Semiconductors
-93-
- - 5.02 g
-0.18- oz.
1.2
(10)
-
2.4
(20)
150EBU04
nsT
A
nC
K/W
N · m
(lbf · in)
Revision: 16-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93003
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Forward Voltage Drop - VFM (V)
Instantaneous Forward Current - I
F
(A)
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
T = 175˚C
T = 125˚C
T = 25˚C
J
J
J
Reverse Voltage - VR (V)
Junction Capacitance - C
T
(pF)
10
100
1000
10000
10 100 1000
T = 25˚C
J
VS-150EBU04
Vishay Semiconductors
1000
T = 175˚C
100
(µA)
R
10
1
0.1
Reverse Current - I
0.01
0.001
0100200300400
Reverse Voltage - VR (V)
J
125˚C
25˚C
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(°C/W)
thJC
Thermal Impedance Z
0.01
Fig. 1 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 2 - Typical Junction Capacitance vs.
Reverse Voltage
1
D = 0.50
0.1
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/ t 2
2. Peak Tj = Pdm x ZthJC + Tc
0.00001 0.0001 0.001 0.01 0.1 1
t1, Rectangular Pulse Duration (Seconds)
Revision: 16-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 2 - Maximum Thermal Impedance Z
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Characteristics
thJC
Document Number: 93003
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