Vishay VS-12CWQ03FNPbF Data Sheet
D-PAK (TO-252AA)
Schottky Rectifier, 2 x 6 A
VS-12CWQ03FNPbF
Vishay Semiconductors
Base
common
cathode
4
FEATURES
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
2
Common
cathode
13
Anode Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
V
R
V
at I
F
F
I
RM
T
max. 150 °C
J
Diode variation Common cathode
E
AS
58 mA at 125 °C
2 x 6 A
30 V
0.37 V
10 mJ
260 °C
DESCRIPTION
The VS-12CWQ03FNPbF surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 12 A
30 V
tp = 5 μs sine 320 A
6 Apk, TJ = 125 °C (per leg) 0.37 V
Range - 55 to 150 °C
Document Number: 94132 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
VOLTAGE RATINGS
PARAMETER SYMBOL VS-12CWQ03FNPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
per leg
per device 12
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 135 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 130
TJ = 25 °C, IAS = 2.0 A, L = 5 mH 10 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
maximum VA = 1.5 x VR typical
J
Following any rated
load condition and with
rated V
RRM
applied
320
2.0 A
6
A
A
VS-12CWQ03FNPbF
dP
tot
dT
J
-------------
1
R
thJA
--------------<
Vishay Semiconductors
Schottky Rectifier, 2 x 6 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward
voltage drop per leg
V
See fig. 1
Maximum reverse
leakage current per leg
I
RM
See fig. 2
Threshold voltage V
Forward slope resistance r
Typical junction capacitance per leg C
Typical series inductance per leg L
FM
F(TO)
6 A
12 A 0.55
(1)
6 A
12 A 0.49
TJ = 25 °C
(1)
= 125 °C 58
T
J
T
= 25 °C
J
= 125 °C
T
J
= Rated V
V
R
R
TJ = TJ maximum
t
T
S
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 590 pF
Measured lead to lead 5 mm from package body 5.0 nH
0.47
0.37
3
0.196 V
21.66 m
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
per leg
per device 1.5
Approximate weight
Marking device Case style D-PAK (similar to TO-252AA) 12CWQ03FN
Note
(1)
thermal runaway condition for a diode on its own heatsink
(1)
, T
T
J
Stg
R
thJC
DC operation
See fig. 4
- 55 to 150 °C
3.0
0.3 g
0.01 oz.
V
mA
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94132
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14-Jan-11
Z
thJC
- Thermal Impedance (°C/W)
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
VS-12CWQ03FNPbF
Schottky Rectifier, 2 x 6 A
100
10
Current (A)
- Instantaneous Forward
F
I
1
01.8
0.2
0.4 0.8 1.2
V
- Forward Voltage Drop (V)
FM
Fig. 1 - Maximum Forward Voltage Drop Characteristics
TJ = 150 °C
T
T
(Per Leg)
= 125 °C
J
= 25 °C
J
1.41.00.6
1000
1.6
1000
100
10
1
0.1
- Reverse Current (mA)
R
0.01
I
0.001
0102030
TJ = 50 °C
TJ = 25 °C
5
V
- Reverse Voltage (V)
R
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Vishay Semiconductors
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
2515
TJ = 25 °C
- Junction Capacitance (pF)
T
C
100
0203035
51525
10
V
- Reverse Voltage (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Document Number: 94132 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Characteristics (Per Leg)
thJC
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