Vishay VS-110RKI...PbF Series, VS-111RKI...PbF Series Data Sheet
www.vishay.com
TO-209AC (TO-94)
PRODUCT SUMMARY
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
Package TO-209AC (TO-94)
Diode variation Single SCR
400 V, 800 V, 1200 V
-40 °C to 140 °C
VS-110RKI...PbF, VS-111RKI...PbF Series
Phase Control Thyristors
(Stud Version), 110 A
FEATURES
• High current and high surge ratings
• Hermetic ceramic housing
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
110 A
1.57 V
80 mA
• AC controllers
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 2080
60 Hz 2180
50 Hz 21.7
60 Hz 19.8
Typical 110 μs
110 A
90 °C
172
400 to 1200 V
-40 to 140 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-110RKI
VS-111RKI
V
VOLTAGE
CODE
40 400 500
120 1200 1300
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK VOLTAGE
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
A
kA2s
MAXIMUM
mA
2080 800 900
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94379
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 217 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
I
T(AV)
T(RMS)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave
DC at 83 °C case temperature 172
t = 10 ms
t = 8.3 ms 2180
t = 10 ms
t = 8.3 ms 1830
t = 10 ms
t = 8.3 ms 19.8
t = 10 ms
t = 8.3 ms 14.0
(16.7 % x x I
(I > x I
(16.7 % x x I
(I > x I
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
< I < x I
T(AV)
), TJ = TJ maximum 1.02
T(AV)
< I < x I
T(AV)
), TJ = TJ maximum 1.70
T(AV)
Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.57 V
TJ = 25 °C, anode supply 6 V resistive load
Vishay Semiconductors
2080
1750
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.82
T(AV)
), TJ = TJ maximum 2.16
T(AV)
21.7
15.3
110 A
90 °C
kA2s
m
200
400
mA
A
V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 , t
T
= TJ maximum, anode voltage 80 % V
J
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
DRM
ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs
V
= 50 V, dV/dt = 20 V/μs, gate 0 V 25
R
1 μs
r
, TJ = 25 °C
DRM
300 A/μs
1
μs
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
,
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum rated V
DRM/VRRM
DRM
500 V/μs
applied 20 mA
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94379
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
DC gate current required to trigger I
DC gate voltage required to trigger V
GM
G(AV)
GM
GT
GT
TJ = TJ maximum, tp 5 ms 12
TJ = TJ maximum, f = 50 Hz, d% = 50 3.0
TJ = TJ maximum, tp 5 ms
GM
GM
TJ = - 40 °C
= 25 °C 80 120
J
= 140 °C 40 -
T
J
TJ = - 40 °C 2.5 -
= 25 °C 1.6 2
J
T
= 140 °C 1 -
J
Maximum required gate
trigger/current/voltage are
the lowest value which will
trigger all units 12 V anode
to cathode applied
Vishay Semiconductors
VALUES
TYP. MAX.
3.0 A
20
10
180 -
UNITS
W
V
mAT
VT
DC gate current not to trigger I
DC gate voltage not to trigger V
GD
GD
TJ = TJ maximum
Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with
rated V
cathode applied
anode to
DRM
6.0 mA
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case R
Maximum thermal resistance, case to heatsink R
J
Stg
thJC
thCS
DC operation 0.27
Mounting surface, smooth, flat and greased 0.1
Non-lubricated threads
Mounting torque, ± 10 %
Lubricated threads
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.043 0.031
120° 0.052 0.053
90° 0.066 0.071
T
60° 0.096 0.101
30° 0.167 0.169
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
-40 to 140
-40 to 150
15.5
(137)
14
(lbf · in)
(120)
= TJ maximum K/W
J
°C
K/W
N · m
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94379
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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