Vishay VS-10WQ045FNPbF Data Sheet
D-PAK (TO-252AA)
Schottky Rectifier, 10 A
VS-10WQ045FNPbF
Vishay Semiconductors
Base
cathode
4, 2
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
1
Anode
3
Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
V
R
V
at I
F
F
I
RM
T
max. 175 °C
J
Diode variation Single die
E
AS
10 A
45 V
0.53 V
15 mA at 125 °C
20 mJ
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-10WQ045FN surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC board. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 10 A
45 V
tp = 5 μs sine 400 A
10 Apk, TJ = 125 °C 0.53 V
Range - 40 to 175 °C
Document Number: 94122 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10WQ045FNPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
50 % duty cycle at TC = 157 °C, rectangular waveform 10 A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 75
TJ = 25 °C, IAS = 3 A, L = 4.4 mH 20 mJ
AS
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
maximum VA = 1.5 x VR typical
J
Following any rated
load condition and with
rated V
RRM
applied
400
A
3.0 A
VS-10WQ045FNPbF
dP
tot
dT
J
-------------
1
R
thJA
--------------<
Vishay Semiconductors
Schottky Rectifier, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
Maximum reverse leakage current
See fig. 2
V
I
RM
Threshold voltage V
Forward slope resistance r
Typical junction capacitance C
Typical series inductance L
FM
F(TO)
10 A
20 A 0.80
(1)
10 A
20 A 0.71
TJ = 25 °C
(1)
T
= 125 °C 15
J
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
TJ = TJ maximum
t
T
S
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 760 pF
Measured lead to lead 5 mm from package body 5.0 nH
0.63
0.53
1
0.255 V
22 m
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style D-PAK (similar to TO-252AA) 10WQ045FN
Note
(1)
thermal runaway condition for a diode on its own heatsink
(1)
T
, T
J
Stg
R
thJC
R
thJA
DC operation
See fig. 4
- 40 to 175 °C
2.0
50
0.3 g
0.01 oz.
V
mA
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94122
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14-Jan-11
100
10
VFM - Forward Voltage Drop (V)
I
F
- Instantaneous Forward
Current (A)
1
0 0.4 0.6 0.8 2.0
TJ = 25 °C
T
J
= 175 °C
T
J
= 125 °C
0.2
1.0 1.2
1.4
1.6 1.8
VS-10WQ045FNPbF
Schottky Rectifier, 10 A
1000
100
10
1
0.1
0.01
Reverse Current (mA)
0.001
0.0001
0
TJ = 25 °C
Vishay Semiconductors
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
10 20
30
5040
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
1000
TJ = 25 °C
- Junction Capacitance (pF)
T
C
100
0
20 30
40
5010
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
P
D = 0.75
D = 0.50
0.1
Single pulse
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
(thermal resistance)
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
DM
1/t2
t1 - Rectangular Pulse Duration (s)
Characteristics
thJC
Fig. 4 - Maximum Thermal Impedance Z
t
1
thJC
t
2
.
+ T
C
.
Document Number: 94122 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
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