Vishay VS-10UT10, VS-10WT10FN Data Sheet

I-PAK (TO-251AA)

D-PAK (TO-252AA)

VS-10UT10 VS-10WT10FN

Base

cathode

Anode Anode

Cathode

4

3

2

1

Base

cathode

Anode Anode

Cathode

4

3

2

1

VS-10UT10, VS-10WT10FN

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Vishay Semiconductors

High Performance Generation 5.0 Schottky Rectifier, 10 A

FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

• Optimized V

• Increased ruggedness for reverse avalanche
capability

• RBSOA available

• Negligible switching losses

• Submicron trench technology

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

vs. IR trade off for high efficiency

F

PRODUCT SUMMARY

Package

I

F(AV)

V

R

V

at I

F

F

max. 4 mA at 125 °C

I

RM

T

max. 175 °C

J

Diode variation Single die

E

AS

I-PAK (TO-251AA),
D-PAK (TO-252AA)

10 A

100 V

0.66 V

54 mJ

APPLICATIONS

• High efficiency SMPS

• High frequency switching

• Output rectification

• Reverse battery protection

• Freewheeling

• DC/DC systems

• Increased power density systems

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

V

V

T

RRM

F

J

10 Apk, TJ = 125 °C (typical) 0.615 V

Range - 55 to 175 °C

100 V

VOLTAGE RATINGS

PARAMETER SYMBOL TEST CONDITIONS

Maximum DC reverse voltage V

R

TJ = 25 °C 100 V

VS-10UT10

VS-10WT10FN

UNITS

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Non-repetitive avalanche energy E

Repetitive avalanche current I

Note

(1)

Measured connecting 2 anode pins

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F(AV)

I

FSM

50 % duty cycle at TC = 159 °C, rectangular waveform 10 A

5 μs sine or 3 μs rect. pulse

Following any rated load
condition and with rated

10 ms sine or 6 ms rect. pulse 110

TJ = 25 °C, IAS = 3 A, L = 12 mH 54 mJ

AS

V

RRM

applied

(1)

Limited by frequency of operation and time pulse duration

AR

so that T

< TJ max. IAS at TJ max. as a function of time pulse

J

(see fig. 8)

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610

A

at

I

T

J

AS

max.

A

Document Number: 94647

I

R

- Reverse Current (mA)

VR - Reverse Voltage (V)

020406080100

0.0001

0.001

0.01

0.1

1

10

100

25 °C

175 °C

150 °C

125 °C

100 °C

75 °C

50 °C

VS-10UT10, VS-10WT10FN

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ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS

5 A

T

10 A 0.735 0.810

Forward voltage drop V

FM

(1)(2)

5 A

20 A 0.840 0.890

10 A 0.615 0.660

20 A 0.730 0.770

Reverse leakage current I

Junction capacitance C

Series inductance L

RM

T

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 400 - pF

T

Measured lead to lead 5 mm from package body 8.0 - nH

S

TJ = 25 °C

(1)

Maximum voltage rate of change dV/dt Rated V

Notes

(1)

Pulse width < 300 μs, duty cycle < 2 %

(2)

Only 1 anode pin connected

= 125 °C - 4 mA

R

= 25 °C

J

T

= 125 °C

J

V

= Rated VR

R

Vishay Semiconductors

0.630 -

0.530 -

-50μA

- 10 000 V/μs

V

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and
storage temperature range

Maximum thermal resistance,
junction to case

Typical thermal resistance,
case to heatsink

Approximate weight

Marking device

100

TJ = 175 °C

10

TJ = 125 °C

TJ = 25 °C

, T

T

J

Stg

R

DC operation 2

thJC

R

thCS

Case style I-PAK 10UT10

Case style D-PAK 10WT10FN

- 55 to 175 °C

°C/W

0.3

0.3 g

0.01 oz.

Revision: 10-Aug-11

1

- Instantaneous Forward Current (A)

F

I

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

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0.2 0.4 0.6 0.8 1.0 1.2 1.61.4 1.8

VFM - Forward Voltage Drop (V)

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Reverse Voltage

2

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C

T

- Junction Capacitance (pF)

VR - Reverse Voltage (V)

02040 8060 100

10

1000

100

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

1

Single pulse

(thermal resistance)

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

Allowable Case Temperature (°C)

I

F(AV)

Average Forward Current (A)

86421210 14

16

0

165

175

180

145

155

160

170

150

Square wave (D = 0.50)
80 % rated V

R

applied

See note (1)

DC

Average Power Loss (W)

I

F(AV)

- Average Forward Current (A)

12963

15

0

8

10

0

4

6

2

180°
120°

90°
60°
30°

RMS limit

DC

VS-10UT10, VS-10WT10FN

Vishay Semiconductors

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Thermal Impedance Z

Fig. 5 - Maximum Allowable Case Temperature vs.

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Average Forward Current

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Characteristics

thJC

Fig. 6 - Forward Power Loss Characteristics

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1

10

100

110

Rectangular Pulse Duration (µs)

Avalanche Current (A)

100

TJ = 25 °C

TJ = 125 °C

TJ = 175 °C

1

10

100

110

Rectangular Pulse Duration (µs)

Avalanche Energy (mJ)

100

TJ = 25 °C

TJ = 125 °C

TJ = 175 °C

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

1000

100

- Non-Repetitive Surge Current (A)

10

FSM

I

10 100 1000 10 000

tp - Square Wave Pulse Duration (µs)

Fig. 7 - Maximum Non-Repetitive Surge Current

) x R

x VFM at (I

F(AV)

REV

;

thJC

/D) (see fig. 6);

F(AV)

VS-10UT10, VS-10WT10FN

Vishay Semiconductors

R

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Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)

Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)

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Document Number: 94647

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ORDERING INFORMATION TABLE

VS-10UT10, VS-10WT10FN

Vishay Semiconductors

Device code

VS- 10 U T 10 FN TRL

51 32 4 6 7

- Vishay Semiconductors product

1

2 - Current rating (10 A)

- Package:

3

U = I-PAK

W = D-PAK

- T = Trench

4

5 - Voltage code (100 V)

- TO-252AA (D-PAK)

6

- D-PAK, I-PAK:

7

None = Tube (75 pieces)

D-PAK only:

TR = Tape and reel

TRL = Tape and reel (left oriented)

TRR = Tape and reel (right oriented)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95024

Part marking information www.vishay.com/doc?95025

Packaging information www.vishay.com/doc?95033

SPICE model www.vishay.com/doc?95026

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Document Number: 94647

I-PAK - S, D-PAK

E

D

L5

L4

ee

A

c2

L

c

H

D1

123

4

b

b3

b2

b3
E1

DIMENSIONS FOR I-PAK - S in millimeters

Outline Dimensions

Vishay Semiconductors

SYMBOL

E 6.40 6.60 6.70

L 3.98 4.13 4.28

L4 0.66 0.76 0.86

L5 1.96 2.16 2.36

D 6.00 6.10 6.20

H 11.05 11.25 11.45

b 0.64 0.76 0.88

b2 0.77 0.84 1.14

b3 5.21 5.34 5.46

b4 0.41 0.51 0.61

e 2.286 BSC

A 2.20 2.30 2.38

c 0.40 0.50 0.60

c2 0.40 0.50 0.60

D1 5.30 - -

E1 4.40 - -

DIMENSIONAL REQUIREMENTS

MIN. NOM. MAX.

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Outline Dimensions

Vishay Semiconductors

I-PAK - S, D-PAK

DIMENSIONS FOR D-PAK in millimeters and inches

(5)

(2) L5

Ø 2

(3)

3

A

L3 (3)

D (5)

b

0.010

Lead tip

0.010

B

L4

M

M

CAB

Detail “C”

CAB

Rotated 90 °CW

Ø 1

Detail “C”

Scale: 20:1

Gauge

plane

L2

E

b3

4

1

2

b2

e

2 x

A

Seating
plane

Ø

C

c2

c

C

C

L

A

H

A

(L1)

D1

A1

E1

3241

C

H

(7)

Seating

plane

0.488 (12.40)

0.409 (10.40)

0.06
MIN.

(1.524)

0.093 (2.38)

0.085 (2.18)

Pad layout

0.265
MIN.

(6.74)

0.245
(6.23)

0.089
(2.28)

MIN.

MIN.

SYMBOL

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC

A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410

b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070

b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.

b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC

c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3

c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040

D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2

D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°

E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°

E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension uncontrolled in L5

(3)

Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad

(4)

Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip

(5)

Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(6)

Dimension b1 and c1 applied to base metal only

(7)

Datum A and B to be determined at datum plane H

(8)

Outline conforms to JEDEC outline TO-252AA

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
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