Vishay VS-10RIA Series Data Sheet

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TO-208AA (TO-48)

Medium Power Phase Control Thyristors

PRODUCT SUMMARY

Package TO-208AA (TO-48)

Diode variation Single SCR

I

T(AV)

V

DRM/VRRM

V

TM

I

GT

T

J

100 V to 1200 V

-65 °C to 125 °C

(Stud Version), 10 A

FEATURES

• Improved glass passivation for high reliability
and exceptional stability at high temperature

• High dIF/dt and dV/dt capabilities

• Standard package

• Low thermal resistance

• Metric threads version available

• Types up to 1200 V V

• Designed and qualified for industrial and consumer level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

10 A

1.75 V

60 mA

TYPICAL APPLICATIONS

• Medium power switching

• Phase control applications

• Can be supplied to meet stringent military, aerospace and
other high reliability requirements

VS-10RIA Series

Vishay Semiconductors

DRM/VRRM

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 225

60 Hz 240

50 Hz 255

60 Hz 233

Typical 110 μs

10 A

85 °C

25 A

100 to 1200 V

-65 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE
NUMBER

VS-10RIA

Notes

(1)

Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs

(2)

For voltage pulses with tp  5 ms

Revision: 11-Mar-14

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

VOLTAGE

CODE

10 100 150 20

20 200 300

40 400 500

60 600 700

80 800 900

100 1000 1100

120 1200 1300

For technical questions within your region: [e-mail]

DRM/VRRM

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

(1)

1

, MAXIMUM NON-REPETITIVE

V

RSM

PEAK VOLTAGE

, [e-mail], [e-mail]

V

(2)

I

AT T

Document Number: 93689

A

A2s

DRM/IRRM

MAXIMUM

= TJ MAXIMUM

J

mA

10

VS-10RIA Series

www.vishay.com

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 2550 A2s

Low level value of threshold voltage V

High level value of threshold voltage V
Low level value of

on-state slope resistance
High level value of

on-state slope resistance

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

I

T(AV)

I

TSM

T(TO)1

T(TO)2

r

t1

r

t2

TM

180° conduction, half sine wave

25 A

t = 10 ms

t = 8.3 ms 240

t = 10 ms

t = 8.3 ms 200

t = 10 ms

t = 8.3 ms 233

t = 10 ms

t = 8.3 ms 165

(16.7 % x  x I
(I >  x I

T(AV)

(16.7 % x  x I

(I >  x I

T(AV)

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

reapplied

100 % V
reapplied

T(AV)

RRM

< I <  x I

), TJ = TJ maximum 1.10

T(AV)

), TJ = TJ maximum 1.39

T(AV)

< I <  x I

), TJ = TJ maximum 24.3

T(AV)

), TJ = TJ maximum 16.7

Ipk = 32 A, TJ = 25 °C, tp = 10 ms sine pulse 1.75 V

H

TJ = 25 °C, anode supply 12 V resistive load

L

Vishay Semiconductors

10 A

85 °C

225

190

=TJ maximum

J

255

180

130

200

A

A2s

V

m

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

V

 600 V

DRM

V

 800 V 180

Maximum rate of rise
of turned-on current

DRM

V

 1000 V 160

DRM

V

 1600 V 150

DRM

dI

Typical turn-on time t

Typical reverse recovery time t

Typical turn-off time t

/dt

F

I

TM

TJ = 25 °C, at rated V

gt

TJ = TJ maximum,

rr

I

TM

= (2 x rated dI/dt) A

= I

, tp > 200 μs, dIF/dt = - 10 A/μs

T(AV)

TJ = TJ maximum, ITM = I
dI

q

/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % V

F

gate bias 0 V to 100 W

= 6 μs, tr = 0.1 μs maximum

p

DRM/VRRM

T(AV)

= TJ maximum, VDM = Rated V

T

J

Gate pulse = 20 V, 15 , t



DRM

, TJ = 125 °C 0.9

, tp > 200 μs, VR = 100 V,

,

DRM

200

4

110

Note

•t

= 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request

q

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

T

= TJ maximum linear to 100 % rated V

Maximum critical rate of rise
of off-state voltage

dV/dt

J

= TJ maximum linear to 67 % rated V

T

J

Note

(1)

Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 10RIA120S90

DRM

DRM

100

300

(1)

A/μs

μs

V/μs

Revision: 11-Mar-14

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 93689

VS-10RIA Series

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TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak negative gate voltage -V

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GT

GT

GD

GD

TJ = TJ maximum

TJ = TJ maximum 1.5 A

TJ = TJ maximum 10 V

TJ = - 65 °C

= 25 °C 60

J

T

= 125 °C 35

J

TJ = - 65 °C 3.0

= 25 °C 2.0

J

T

= 125 °C 1.0

J

TJ = TJ maximum, V

Maximum required gate trigger
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied

= Rated value 2.0 mA

DRM

Maximum gate current/voltage not

TJ = TJ maximum,
V

= Rated value

DRM

to trigger is the maximum value
which will not trigger any unit with
rated V
applied

anode to cathode

DRM

Vishay Semiconductors

8.0

2.0

90

0.2 V

W

mAT

VT

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction and
storage temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Mounting torque

Approximate weight

Case style See dimensions - link at the end of datasheet TO-208AA (TO-48)

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.44 0.32

120° 0.53 0.56

90° 0.68 0.75

60° 1.01 1.05

30° 1.71 1.73

Note

• The table above shows the increment of thermal resistance R

, T

T

J

Stg

R

thJC

R

thCS

DC operation 1.85

Mounting surface, smooth, flat and greased 0.35

-65 to 125 °C

TO NUT TO DEVICE

20 (27.5) 25 lbf in

Lubricated threads
(Non-lubricated threads)

0.23 (0.32) 0.29 kgf · m

2.3 (3.1) 2.8 N · m

14 g

0.49 oz.

= TJ maximum K/W

T

J

when devices operate at different conduction angles than DC

thJC

K/W

Revision: 11-Mar-14

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

3

, [e-mail], [e-mail]

Document Number: 93689