VISHAY VS-10CTQ150 Datasheet
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3L TO-220AB
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 5 A
VS-10CTQ150-M3
Base
common
cathode
4
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
Anode
2
Common
13
cathode
Anode
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
®
-JESD 47
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
at I
F
F
I
max. 7 mA at 125 °C
RM
T
max. 175 °C
J
E
AS
Package 3L TO-220AB
Circuit configuration Common cathode
2 x 5 A
150 V
0.73 V
6.75 mJ
• Designed and qualified according to JEDEC
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 10 A
150 V
tp = 5 μs sine 620 A
5 Apk, TJ = 125 °C (per leg) 0.73 V
Range -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10CTQ150-M3 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
150 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current, see fig. 5
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
Revision: 20-Sep-17
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
per leg
I
per device 10
F(AV)
I
FSM
AR
AS
50 % duty cycle at TC = 155 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
10 ms sine or 6 ms rect. pulse 115
RRM
applied
TJ = 25 °C, IAS = 0.30 A, L = 150 mH 6.75 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 96245
5
620
0.30 A
A
A
VS-10CTQ150-M3
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ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
5 A
Maximum forward voltage drop per leg
See fig. 1
V
FM
10 A 1.10
(1)
5 A
10 A 0.86
Maximum reverse leakage current per leg
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance per leg C
Typical series inductance per leg L
F(TO)
TJ = 25 °C
(1)
T
= 125 °C 7
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 200 pF
T
Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink (only for TO-220)
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style 3L TO-220AB 10CTQ150
, T
T
J
Stg
R
DC operation
thJC
R
thCS
Mounting surface, smooth, and greased 0.50
Vishay Semiconductors
0.93
0.73
0.05
R
0.468 V
28 m
10 000 V/μs
-55 to +175 °C
3.50
1.75
2g
0.07 oz.
kgf · cm
(lbf · in)
V
mA
°C/W
Revision: 20-Sep-17
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
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Document Number: 96245
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100
10
1
VFM - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0 2.50.5 1.0 1.5 2.0 3.0
TJ = 25 °C
T
J
= 175 °C
T
J
= 125 °C
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
100
VS-10CTQ150-M3
Vishay Semiconductors
10
1
TJ = 125 °C
TJ = 175 °C
TJ = 150 °C
0.1
0.01
- Reverse Current (mA)
0.001
R
I
0.0001
0 25 50 75 100 125 150
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
1000
100
TJ = 25 °C
- Junction Capacitance (pF)
T
C
10
20 60
0
40 140
80 120 160
100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Revision: 20-Sep-17
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 4 - Maximum Thermal Impedance Z
3
Characteristics (Per Leg)
thJC
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Document Number: 96245
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