VISHAY VS-10BQ100 Datasheet
www.vishay.com
Cathode Anode
SMB (DO-214AA)
High Performance Schottky Rectifier, 1 A
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
at I
F
F
I
RM
T
max. 175 °C
J
E
AS
Package SMB (DO-214AA)
Circuit configuration Single
1 A
100 V
0.59 V
1 mA at 125 °C
1.0 mJ
VS-10BQ100-M3
Vishay Semiconductors
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10BQ100-M3 surface-mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 1 A
100 V
tp = 5 μs sine 780 A
1.0 Apk, TJ = 125 °C 0.59 V
Range -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10BQ100-M3 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
AS
50 % duty cycle at TL = 143 °C, rectangular waveform 1.0 A
5 μs sine or 3 μs rect. pulse Following any rated
10 ms sine or 6 ms rect. pulse 38
TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
load condition and with
rated V
RRM
applied
780
A
0.5 A
Revision: 23-Apr-2019
1
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93227
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-10BQ100-M3
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
Maximum forward voltage drop
See fig. 1
V
FM
2 A 0.82
(1)
1 A
2 A 0.65
Maximum reverse leakage current
See fig. 2
Typical junction capacitance C
Typical series inductance L
I
RM
T
S
TJ = 25 °C
= 125 °C 1
T
J
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 65 pF
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of charge dV/dt Rated V
R
= 25 °C
T
J
T
= 125 °C
J
= Rated V
V
R
Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style SMB (DO-214AA) 1J
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(1)
T
, T
J
Stg
(2)
R
thJL
R
thJA
DC operation 36
Vishay Semiconductors
0.75
0.59
R
0.5
10 000 V/μs
- 55 to 175 °C
80
0.10 g
0.003 oz.
V
mA
°C/W
(2)
Mounted 1" square PCB
Revision: 23-Apr-2019
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93227
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