Vishay VS-10BQ030PbF Data Sheet
SMB
Schottky Rectifier, 1.0 A
Cathode Anode
VS-10BQ030PbF
Vishay High Power Products
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
F(AV)
V
R
1.0 A
30 V
DESCRIPTION
The VS-10BQ030PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 1.0 A
30 V
tp = 5 ms sine 430 A
1.0 Apk, TJ = 125 °C 0.30 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10BQ030PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TL = 106 °C, rectangular waveform 1.0 A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 90
TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated
load condition and with
rated V
RRM
applied
430
A
1.0 A
Document Number: 94111 For technical questions, contact: diodestech@vishay.com
Revision: 03-Mar-10 1
www.vishay.com
VS-10BQ030PbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
Maximum forward voltage drop V
FM
(1)
1 A
2 A 0.470
2 A 0.370
TJ = 25 °C
Maximum reverse leakage current I
RM
Maximum junction capacitance C
Typical series inductance L
T
S
= 100 °C 5.0
J
= 125 °C 15
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 200 pF
Measured lead to lead 5 mm from package body 2.0 nH
(1)
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.420
0.300
0.5
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style SMB (similar DO-214AA) V1E
Notes
dP
(1)
------------dT
(2)
Mounted 1" square PCB
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
(1)
T
, T
J
Stg
(2)
R
thJL
R
thJA
DC operation 25
- 55 to 150 °C
80
0.10 g
0.003 oz.
V
mAT
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94111
2 Revision: 03-Mar-10
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