Vishay VS-10BQ015PbF Data Sheet

PRODUCT SUMMARY
Cathode
Anode
SMB
Package SMB (DO-214AA)
I
F(AV)
V
R
V
at I
F
F
I
RM
T
max. 125 °C
J
Diode variation Single die
E
AS
Schottky Rectifier, 1.0 A
• Ultralow forward voltage drop
• Optimized for OR-ing applications
• Guard ring for enhanced ruggedness and long term reliability
1 A
15 V
0.32 V
12 mA at 100 °C
1 mJ
• 125 °C T
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-10BQ015PbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.
J
VS-10BQ015PbF
Vishay Semiconductors
operation (VR < 5 V)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 1.0 A
15 V
tp = 5 μs sine 140 A
1.0 Apk, TJ = 125 °C 0.32 V
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10BQ015PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
15
25
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current See fig. 5
Maximum peak one cycle non-repetitive surge current See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TL = 84 °C, rectangular waveform 1.0 A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 40
TJ = 25 °C, IAS = 1 A, L = 2 mH 1.0 mJ
AS
Current decaying linearly to zero in 1 μs Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated V
applied
RRM
140
A
1.0 A
Document Number: 94110 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 15-Nov-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VS-10BQ015PbF
dP
tot
dT
J
-------------
1
R
thJA
--------------<
Vishay Semiconductors
Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
Maximum forward voltage drop See fig. 1
V
FM
2 A 0.44
(1)
1 A
2 A 0.40
Maximum reverse leakage current See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Typical junction capacitance C
Typical series inductance L
F(TO)
t
T
S
TJ = 25 °C
(1)
T
= 100 °C 12
J
TJ = TJ maximum
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 390 pF
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.35
0.32
0.5
-V
-m
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to lead
Maximum thermal resistance, junction to ambient
Approximate weight
Marking device Case style SMB (similar to DO-214AA) V1C
Notes
(1)
(2)
Mounted 1" square PCB
thermal runaway condition for a diode on its own heatsink
(1)
J
Stg
DC operation
(2)
R
R
thJL
thJA
See fig. 4
DC operation 80
- 55 to 125
- 55 to 150
36
0.10 g
0.003 oz.
V
mA
°C
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94110 2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Nov-10
10
1
VFM - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0
0.1
0.2 0.4 0.6 0.8 1.0
TJ = 100 °C T
J
= 75 °C
T
J
= 25 °C
94110_01
VS-10BQ015PbF
Schottky Rectifier, 1.0 A
10
1
0.1
- Reverse Current (mA)
R
I
0.01 0
94110_02
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
Vishay Semiconductors
69
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
15312
100
- Junction Capacitance (pF)
T
C
10
94110_03
0
69
VR - Reverse Voltage (V)
15312
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
100
10
P
D = 0.75 D = 0.50
1
- Thermal Impedance (°C/W)
thJC
Z
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
94110_04
Single pulse
(thermal resistance)
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
D = 0.33 D = 0.25 D = 0.20
thJC
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics (Per Leg)
DM
t
1
t
2
1/t2
+ T
thJC
C
.
Document Number: 94110 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 15-Nov-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
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