Vishay VS-100BGQ100 Data Sheet
www.vishay.com
Cathode Anode
PowerTab
®
PRODUCT SUMMARY
Package PowerTab
I
F(AV)
V
R
V
at I
F
F
I
RM
max. 175 °C
T
J
Diode variation Single die
E
AS
Schottky Rectifier, 100 A
FEATURES
• 175 °C max. operating junction temperature
• High frequency operation
• Low forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and long
term reliability
• Screw mounting only
• Designed and qualified according to JEDEC-JESD47
®
100 A
100 V
0.82 V
180 mA at 125 °C
9 mJ
• PowerTab
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-100BGQ100 Schottky rectifier has been optimized
for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
®
package
VS-100BGQ100
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 100 A
T
C
124 °C
100 V
tp = 5 μs sine 6300 A
100 Apk (typical) 0.77 V
T
J
125 °C
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 100BGQ100 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 124 °C, rectangular waveform 100 A
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse 800
TJ = 25 °C, IAS = 2 A, L = 4.5 mH 9 mJ
AS
V
RRM
applied
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
6300
A
2A
Revision: 17-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94581
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100BGQ100
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
50 A
Forward voltage drop V
FM
(1)
50 A
100 A 1.01 1.08
100 A 0.77 0.82
Reverse leakage current I
Maximum junction capacitance C
Typical series inductance L
RM
T
= 125 °C 14 18 mA
J
T
S
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C 1320 pF
Measured from tab to mounting plane 3.5 nH
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 1.2 (10)
maximum 2.4 (20)
Marking device Case style PowerTab
, T
T
J
Stg
R
R
thJC
thCS
DC operation 0.50
Mounting surface, smooth and greased 0.30
®
Vishay Semiconductors
VALUES
TYP. MAX.
0.83 0.86
0.66 0.7
22 300 μA
R
10 000 V/μs
- 55 to 175 °C
5g
0.18 oz.
(lbf · in)
100BGQ100
UNITS
V
°C/W
N · m
Revision: 17-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94581
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Instantaneous Forward Current - I
F
(A)
0.0 0.5 1.0 1.5 2.0
1
10
100
1000
Tj = 25°C
Tj = 125°C
Tj = 175°C
Forward Voltage Drop - VFM (V)
Reverse Current - I
R
(mA)
Reverse Voltage - VR (V)
0 20406080100
0.0001
0.001
0.01
0.1
1
10
100
1000
75°C
100°C
50°C
125°C
150°C
175°C
25°C
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(°C/W)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.2
D = 0.25
D = 0.33
D = 0.5
D = 0.75
VS-100BGQ100
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
T
1000
Junc tion Capac itance - C (pF)
100
0 20406080100
T = 25°C
J
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse
Voltage
Revision: 17-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
3
Document Number: 94581
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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