Vishay VS-100BGQ030 Data Sheet
www.vishay.com
Cathode Anode
PowerTab
®
PRODUCT SUMMARY
Package PowerTab
I
F(AV)
V
R
at I
V
F
F
I
RM
T
max. 150 °C
J
Diode variation Single die
E
AS
Schottky Rectifier, 100 A
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
• Ultralow forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and long
term reliability
• Screw mounting only
• Designed and qualified according to JEDEC-JESD47
• PowerTab
®
100 A
30 V
0.56 V
460 mA at 125 °C
9 mJ
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-100BGQ030 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for low voltage
output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
®
package
VS-100BGQ030
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 100 A
T
C
106 °C
30 V
tp = 5 μs sine 4500 A
100 Apk (typical) 0.49 V
T
J
150 °C
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 100BGQ030 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 106 °C, rectangular waveform 100 A
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse 850
TJ = 25 °C, IAS = 8 A, L = 1.12 mH 36 mJ
AS
V
RRM
applied
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
4500
A
8A
Revision: 17-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94579
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100BGQ030
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Forward voltage drop V
FM
50 A
100 A 0.56 0.63
(1)
50 A
100 A 0.49 0.56
T
= 25 °C
J
= 150 °C
T
J
TJ = 125 °C, VR = 15 V 80 160
= 150 °C, VR = 30 V 800 1100
T
Reverse leakage current I
Maximum junction capacitance C
Typical series inductance L
RM
(1)
T
S
Maximum voltage rate of change dV/dt Rated V
J
T
= 25 °C
J
T
= 125 °C 260 460
J
V
= Rated V
R
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C 3800 pF
Measured from tab to mounting plane 3.5 nH
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 1.2 (10)
maximum 2.4 (20)
Marking device Case style PowerTab
, T
T
J
Stg
R
R
thJC
thCS
DC operation 0.50
Mounting surface, smooth and greased 0.30
®
Vishay Semiconductors
0.47 0.5
0.36 0.4
0.6 2.4
R
10 000 V/μs
- 55 to 150 °C
°C/W
5g
0.18 oz.
N · m
(lbf · in)
100BGQ030
V
mA
Revision: 17-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94579
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-100BGQ030
Vishay Semiconductors
1000
100
(A)
F
Instantaneous Forward Current - I
Tj = 150°C
10
Tj = 125°C
Tj = 25°C
1000
150°C
100
(mA)
R
10
1
Reverse Current - I
0.1
0.01
0 5 10 15 20 25 30
125°C
100°C
75°C
50°C
25°C
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
(pF)
T
T = 25 ° C
J
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Junction Capac itanc e - C
1000
0 5 10 15 20 25 30 35
Reverse Voltage - V
R
Fig. 3 - Typical Junction Capacitance vs. Reverse
Voltage
1
D = 0.75
(°C/W)
thJC
0.1
D = 0.5
D = 0.33
D = 0.25
D = 0.2
Single Pulse
(Thermal Resistance)
Thermal Impedance Z
0.01
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
Revision: 17-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Characteristics
thJC
Document Number: 94579
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
(V)
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