Vishay VS-100BGQ015 Data Sheet
www.vishay.com
Cathode Anode
PowerTab
®
PRODUCT SUMMARY
Package PowerTab
I
F(AV)
V
R
V
at I
F
F
I
RM
max. 125 °C
T
J
Diode variation Single die
E
AS
Schottky Rectifier, 100 A
FEATURES
• Ultralow forward voltage drop
• Optimized for OR-ing applications
• Guard ring for enhanced ruggedness and
long term reliability
• Screw mounting only
• Designed and qualified according to
JEDEC-JESD47
• 125 °C max. operating junction temperature (V
• High frequency operation
• Continuous high current operation
®
100 A
15 V
0.45 V
870 mA at 100 °C
9 mJ
• PowerTab
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-100BGQ015 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
®
package
VS-100BGQ015
Vishay Semiconductors
< 5 V)
R
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 100 A
T
C
tp = 5 μs sine 5000 A
100 Apk (typical) 0.39 V
T
J
Range - 55 to 125 °C
88 °C
15 V
125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS VS-100BGQ015 UNITS
Maximum DC reverse voltage V
R
TJ = 100 °C 15
T
= 125 °C 5
J
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 88 °C, rectangular waveform 100 A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 1000
TJ = 25 °C, IAS = 2 A, L = 4.5 mH 9 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 3 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
5000
A
2A
Revision: 15-Jun-11
1
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94578
VS-100BGQ015
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Forward voltage drop V
FM
50 A
100 A 0.45 0.52
(1)
50 A
100 A 0.39 0.45
T
= 25 °C
J
= 125 °C
T
J
TJ = 100 °C, VR = 12 V 480 700 mA
T
= 125 °C, VR = 5 V 1 1.2 A
Maximum reverse leakage current I
Maximum junction capacitance C
Typical series inductance L
RM
(1)
T
S
Maximum voltage rate of change dV/dt Rated V
J
T
= 25 °C
J
T
= 100 °C 580 870
J
V
= Rated V
R
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 3800 pF
Measured from tab to mounting plane 3.5 nH
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature
range
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 1.2 (10)
maximum 2.4 (20)
Marking device Case style PowerTab
R
R
T
Stg
thJC
thCS
J
DC operation 0.50
Mounting surface, smooth and greased 0.30
®
Vishay Semiconductors
0.36 0.4
0.27 0.31
R
718
10 000 V/μs
- 55 to 125
°C
- 55 to 150
°C/W
5g
0.18 oz.
N · m
(lbf · in)
100BGQ015
V
mA
Revision: 15-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94578
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Forward Voltage Drop - VFM (V)
Instantaneous Forward Current - I
F
(A)
0.0 0.2 0.4 0.6 0.8 1.0
1
10
100
1000
Tj = 25°C
Tj = 100°C
Tj = 125°C
Reverse Current - I
R
(mA)
0 2 4 6 8 10121416
1
10
100
1000
75°C
100°C
50°C
25°C
Reverse Voltage - VR (V)
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(°C/W)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.2
D = 0.25
D = 0.33
D = 0.5
D = 0.75
VS-100BGQ015
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
T
Junction Capacitance - C (pF)
1000
0 2 4 6 8 10121416
T = 25 °C
J
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Revision: 15-Jun-11
Fig. 4 - Maximum Thermal Impedance Z
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Characteristics
thJC
3
Document Number: 94578
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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