Vishay VS-100BGQ015 Data Sheet

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Cathode Anode

PowerTab

®

PRODUCT SUMMARY

Package PowerTab

I

F(AV)

V

R

V

at I

F

F

I

RM

max. 125 °C

T

J

Diode variation Single die

E

AS

Schottky Rectifier, 100 A

FEATURES

• Ultralow forward voltage drop

• Optimized for OR-ing applications

• Guard ring for enhanced ruggedness and
long term reliability

• Screw mounting only

• Designed and qualified according to
JEDEC-JESD47

• 125 °C max. operating junction temperature (V

• High frequency operation

• Continuous high current operation

®

100 A

15 V

0.45 V

870 mA at 100 °C

9 mJ

• PowerTab

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

The VS-100BGQ015 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.

®

package

VS-100BGQ015

Vishay Semiconductors

< 5 V)

R

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Rectangular waveform 100 A

T

C

tp = 5 μs sine 5000 A

100 Apk (typical) 0.39 V

T

J

Range - 55 to 125 °C

88 °C

15 V

125 °C

VOLTAGE RATINGS

PARAMETER SYMBOL TEST CONDITIONS VS-100BGQ015 UNITS

Maximum DC reverse voltage V

R

TJ = 100 °C 15

T

= 125 °C 5

J

V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Non-repetitive avalanche energy E

Repetitive avalanche current I

F(AV)

I

FSM

AR

50 % duty cycle at TC = 88 °C, rectangular waveform 100 A

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse 1000

TJ = 25 °C, IAS = 2 A, L = 4.5 mH 9 mJ

AS

Current decaying linearly to zero in 1 μs
Frequency limited by T

maximum VA = 3 x VR typical

J

Following any rated load
condition and with rated
V

applied

RRM

5000

A

2A

Revision: 15-Jun-11

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Document Number: 94578

VS-100BGQ015

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ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS

Forward voltage drop V

FM

50 A

100 A 0.45 0.52

(1)

50 A

100 A 0.39 0.45

T

= 25 °C

J

= 125 °C

T

J

TJ = 100 °C, VR = 12 V 480 700 mA

T

= 125 °C, VR = 5 V 1 1.2 A

Maximum reverse leakage current I

Maximum junction capacitance C

Typical series inductance L

RM

(1)

T

S

Maximum voltage rate of change dV/dt Rated V

J

T

= 25 °C

J

T

= 100 °C 580 870

J

V

= Rated V

R

VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 3800 pF

Measured from tab to mounting plane 3.5 nH

R

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction temperature
range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 1.2 (10)

maximum 2.4 (20)

Marking device Case style PowerTab

R

R

T

Stg

thJC

thCS

J

DC operation 0.50

Mounting surface, smooth and greased 0.30

®

Vishay Semiconductors

0.36 0.4

0.27 0.31

R

718

10 000 V/μs

- 55 to 125
°C

- 55 to 150

°C/W

5g

0.18 oz.

N · m

(lbf · in)

100BGQ015

V

mA

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Forward Voltage Drop - VFM (V)

Instantaneous Forward Current - I

F

(A)

0.0 0.2 0.4 0.6 0.8 1.0

1

10

100

1000

Tj = 25°C

Tj = 100°C

Tj = 125°C

Reverse Current - I

R

(mA)

0 2 4 6 8 10121416

1

10

100

1000

75°C

100°C

50°C

25°C

Reverse Voltage - VR (V)

t1, Rectangular Pulse Duration (Seconds)

Thermal Impedance Z

thJC

(°C/W)

1E-05 1E-04 1E-03 1E-02 1E-01 1E+00

0.01

0.1

1

Single Pulse

(Thermal Resistance)

D = 0.2

D = 0.25

D = 0.33

D = 0.5

D = 0.75

VS-100BGQ015

Vishay Semiconductors

Fig. 1 - Maximum Forward Voltage Drop Characteristics

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

10000

T

Junction Capacitance - C (pF)

1000

0 2 4 6 8 10121416

T = 25 °C

J

Reverse Voltage - V (V)

R

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage

Revision: 15-Jun-11

Fig. 4 - Maximum Thermal Impedance Z

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Characteristics

thJC

3

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0

VS-100BGQ015

Vishay Semiconductors

130

120

110

100

DC

90

80

70

Square wave (D=0.50)

60

5V applied

50

Allowable Case Temperature (°C)

see note (1)

40

0 20 40 60 80 100 120 140 16

Average Forward Current - IF

(AV)

(A)

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

10000

FSM

1000

80

70

60

180°
120°

90°
60°
30°

RMS Limit

50

40

DC

30

20

Average Power Loss - (Watts)

10

0

0306090120150

Average Forward Current - IF

(AV)

Fig. 6 - Forward Power Loss Characteristics

(A)

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 5 V

REV

Current
monitor

x VFM at (I

F(AV)

REV

At Any Ra ted Load Cond ition
And With Rated V Applied
Fo ll o w in g Su rg e

Non -Rep et it ive Surge Current - I (A)

100

10 100 1000 10000

Square Wave Pulse Duration - t (microsec)

RRM

Fig. 7 - Maximum Non-Repetitive Surge Current

L

D.U.T.

IRFP460

R

= 25 Ω

g

Freewheel

40HFL40S02

Fig. 8 - Unclamped Inductive Test Circuit

) x R

;

thJC

/D) (see fig. 6);

F(AV)

p

High-speed

switch

diode

= 25 V

V

d

+

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VS-100BGQ015

2 - Current rating

3 - Essential part number

4 - Voltage code = V

RRM

Device code

1 32 4

VS- 100 BGQ 015

1 - Vishay Semiconductors product

www.vishay.com

ORDERING INFORMATION TABLE

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95240

Part marking information www.vishay.com/doc?95370

SPICE model www.vishay.com/doc?95428

Application note www.vishay.com/doc?95179

Vishay Semiconductors

Revision: 15-Jun-11

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Document Number: 94578

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Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

15.90 (0.62)

15.60 (0.61)

15.60 (0.61)

14.80 (0.58)

4.00 (0.15)

5.20 (0.20)

8.45 (0.33)

8.20 (0.32)

Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)

4.95 (0.19)

4.75 (0.18)

4.20 (0.16)

5.45 REF.

(0.21 REF.)

PowerTab

Lead 1

12.40 (0.48)

12.10 (0.47)

Lead 2

4.95 (0.19)

Lead assignments

Lead 1 = Cathode

Lead 2 = Anode

1.35 (0.05)

1.20 (0.04)

3.09 (0.12)

3.00 (0.11)

0.60 (0.02)

0.40 (0.01)

®

Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)

18.25 (0.71)

18.00 (0.70)

1.30 (0.05)

1.10 (0.04)

27.65 (1.08)

27.25 (1.07)

12.20 (0.48)

12.00 (0.47)

39.8 (1.56)

39.6 (1.55)

Revision: 03-Aug-11

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Disclaimer

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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