VISHAY VQ1000P, VQ1000J Datasheet

PRODUCT SUMMARY

2N7000/2N7002, VQ1000J/P, BS170

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

Part Number V

2N7000

2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 VQ1000J VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225

BS170 5 @ VGS = 10 V 0.8 to 3 0.5

(BR)DSS

Min (V)

60

V

r

Max (W)

DS(on)

5 @ VGS = 10 V 0.8 to 3 0.2

5.5 @ VGS = 10 V 0.8 to 2.5 0.225

(V) ID (A)

GS(th)

FEATURES BENEFITS APPLICATIONS

D Low On-Resistance: 2.5 W D Low Threshold: 2.1 V D Low Input Capacitance: 22 pF D Fast Switching Speed: 7 ns D Low Input and Output Leakage

TO-226AA

(TO-92)

S

G

D

1

2

3

Top View

2N7000

Dual-In-Line

D Low Offset Voltage D Low-Voltage Operation D Easily Driven Without Buffer D High-Speed Circuits D Low Error Voltage

D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Battery Operated Systems D Solid-State Relays

TO-236

(SOT-23)

G

1

S

2

Top View

Marking Code: 72wll 72 = Part Number Code for 2N7002

w = Week Code ll = Lot Traceability

D

3

D

1

N

Document Number: 70226 S-04279—Rev. F, 16-Jul-01

S

1

G

1

NC NC

G

2

S

2

D

2

1

2

3

4

5

6

7

Top View

Plastic: VQ1000J

Sidebraze: VQ1000P

D

4

14

S

13

G

12

11

G

10

S

9

D

8

N

4

3

N

3

TO-92-18RM

(TO-18 Lead Form)

D

G

S

1

2

3

Top View

BS170

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11-1

2N7000/2N7002, VQ1000J/P, BS170

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Single Total Quad

Parameter Symbol 2N7000 2N7002

Drain-Source Voltage V Gate-Source Voltage—Non-Repetitive V Gate-Source Voltage—Continuous V

Continuous Drain Current

Continuous Drain Current (T

= 150_C)

J

Pulsed Drain Current

Power Dissipation

Thermal Resistance, Junction-to-Ambient R Operating Junction and

Storage Temperature Range

Notes a. Pulse width limited by maximum junction temperature. b. t

v 50 ms.

p

a

TA= 25_C TA= 100_C

GSM

I

P

TJ, T

DS

GS

I

D

DM

thJA

60 60 60 60 60

"40 "40 "30 "25 "20 "20 "20 "20 "20

0.2 0.115 0.225 0.225 0.5

0.13 0.073 0.14 0.14 0.175

0.5 0.8 1 1

D

stg

0.4 0.2 1.3 1.3 2 0.83

0.16 0.08 0.52 0.52 0.8

312.5 625 96 96 62.5 156

VQ1000J VQ1000P

–55 to 150

SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions TypaMin Max Min Max Unit

Static

Drain-Source Breakdown Voltage V

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance Common Source Output Conductance

b

(BR)DSS

r

Dynamic

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C

GS(th)

GSS

DSS

I

D(on)

DS(on)

g

fs

g

os

iss oss rss

VGS = 0 V, ID = 10 mA

VDS = VGS, ID = 1 mA 2.1 0.8 3 VDS = VGS, ID = 0.25 mA 2.0 1 2.5 VDS = 0 V, VGS = "15 V "10 VDS = 0 V, VGS = "20 V "100

VDS = 48 V, VGS = 0 V 1

TC = 125_C

VDS = 60 V, VGS = 0 V 1

TC = 125_C VDS = 10 V, VGS = 4.5 V 0.35 0.075 VDS = 7.5 V, VGS = 10 V 1 0.5 VGS = 4.5 V, ID = 0.075 A 4.5 5.3

VGS = 5 V, ID = 0.05 A 3.2 7.5

TC = 125_C

VGS = 10 V, ID = 0.5 A 2.4 5 7.5

TJ = 125_C VDS = 10 V, ID = 0.2 A 100 80 VDS = 5 V, ID = 0.05 A 0.5

VDS = 25 V, VGS = 0 V

f = 1 MHz

70 60 60

5.8 13.5

4.4 9 13.5

22 60 50 11 25 25

2 5 5

VQ1000J/P

Limits

2N7000 2N7002

1000

BS170 Unit

V

A

W

_C/W

_C

V

nA

mA

500

A

W

mS

pF

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11-2

Document Number: 70226

S-04279—Rev. F, 16-Jul-01

2N7000/2N7002, VQ1000J/P, BS170

W

m

W

Vishay Siliconix

SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

2N7000 2N7002

Parameter Symbol Test Conditions TypaMin Max Min Max Unit

Switching

Turn-On Time t Turn-Off Time t Turn-On Time t Turn-Off Time t

SPECIFICATIONSĊVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED)

Static

Drain-Source Breakdown Voltage V Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

Common Source Output Conductance

Dynamic

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C

Switching

Turn-On Time t Turn-Off Time t Turn-On Time t Turn-Off Time t

d

ON

OFF

ON

OFF

VDD = 15 V, RL = 25 W

VDD = 15 V, RL = 25

ID ^0.5 A, V

ID ^ 0.2 A, V

GEN

VDD = 30 V, RL = 150 W

VDD = 30 V, RL = 150

GEN

= 10 V, RG = 25 W

7 10 7 10 7 20

11 20

Limits

VQ1000J/P BS170

Parameter Symbol Test Conditions TypaMin Max Min Max Unit

(BR)DSS

GS(th)

GSS

DSS

b

I

D(on)

r

DS(on)

g

fs

os

iss oss rss

VGS = 0 V, ID = 100 mA

VDS = VGS, ID = 1 mA 2.1 0.8 2.5 0.8 3

VDS = 0 V, VGS = "10 V "100

TJ = 125_C

VDS = 0 V, VGS = "15 V "10

VDS = 25 V, VGS = 0 V 0.5

VDS = 48 V, VGS = 0 V, TJ = 125_C

VDS = 60 V, VGS = 0 V 10

VDS = 10 V, VGS = 10 V 1 0.5 A

VGS = 5 V, ID = 0.2 A 4 7.5 VGS = 10 V, ID = 0.2 A 2.3 5 VGS = 10 V, ID = 0.3 A 2.3 5.5

TJ = 125_C

VDS = 10 V, ID = 0.2 A 100

VDS = 10 V, ID = 0.5 A 100

VDS =5 V, ID = 0.05 A 0.5

VDS =25 V, VGS = 0 V

f = 1 MHz

d

ON

OFF

ON

OFF

VDD = 15 V, RL = 23 W

VDD = 15 V, RL = 23

ID ^ 0.6 A, V

ID ^ 0.2 A, V

GEN

VDD = 25 V, RL = 125 W

VDD = 25 V, RL = 125

GEN

= 10 V, RG = 25 W

70 60 60

"500

500

4.2 7.6

22 60 60 11 25

2 5

7 10 7 10 7 10 7 10

ns

V

nA

mA

W

mS

pF

ns

Notes a. For DESIGN AID ONLY, not subject to production testing. VNBF06 b. Pulse test: PW v80 ms duty cycle v1%. c. This parameter not registered with JEDEC. d. Switching time is essentially independent of operating temperature.

Document Number: 70226 S-04279—Rev. F, 16-Jul-01

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11-3

2N7000/2N7002, VQ1000J/P, BS170

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

1.0

Output Characteristics Transfer Characteristics

VGS = 10, 9, 8, 7 V

0.8

0.6

0.4

– Drain Current (A)

D

I

0.2

0.0 0123456

VDS – Drain-to-Source Voltage (V)

7

6

5

4

3

– On-Resistance ( Ω )

2

DS(on)

r

1

0

0.0 0.2 0.4 0.6 0.8 1.0 I

– Drain Current (A)

D

rDS @ 5 V = V

rDS @ 10 V = V

6.5 V

6 V

5.5 V

5 V

4.5 V

4 V

3.5 V 3 V 2.5 V

GS

2, 1 V

1.0

0.8 TJ = –55_C

0.6

0.4

– Drain Current (A)

D

I

0.2

0.0

012345678

– Gate-to-Source Voltage (V)

V

GS

CapacitanceOn-Resistance vs. Drain Current

60

VGS = 0 V f = 1 MHz

50

40

30

20

C – Capacitance (pF)

10

0

0 5 10 15 20 25 30 35

– Drain-to-Source Voltage (V)

V

DS

C

iss

C

oss

C

rss

25_C

125_C

20

16

12

8

4

– Gate-to-Source Voltage (V)

GS

V

0

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11-4

Gate Charge

ID = 0.5 A

VDS = 30 V

0 400 800 1200 1600 2000 2400

Qg – Total Gate Charge (pC)

(Normalized)

– On-Resistance ( Ω )

DS(on)

r

On-Resistance vs. Junction Temperature

2.0

VGS = 10 V, rDS @ 0.5 A

1.5

1.0 VGS = 5 V, rDS @ 0.05 A

0.5

0.0

–55 –30 –5 20 45 70 95 120 145

T

– Junction Temperature (_C)

J

Document Number: 70226

S-04279—Rev. F, 16-Jul-01

2N7000/2N7002, VQ1000J/P, BS170

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Vishay Siliconix

1.000

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

TJ = 125_C

0.100

T

= 25_C

J

0.010

– Source Current (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

0.50

0.25

–0.00

– On-Resistance ( Ω )

DS(on)

r

Threshold Voltage

ID = 250 mA

6

I

5

4

= 50 mA

D

500 mA

3

2

1

0

0 2 4 6 8 101214161820

– Variance (V)

–0.25

GS(th)

V

–0.50

–0.75

–50 –25 0 25 50 75 100 125 150

Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.1

0.02

Thermal Impedance

Normalized Effective Transient

0.01

0.1 1 10010 1 K

0.01

Single Pulse

t1 – Square Wave Pulse Duration (sec)

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM – TA = PDMZ

2

thJA

t t

thJA

1 2

(t)

= 156_C/W

10 K

Document Number: 70226 S-04279—Rev. F, 16-Jul-01

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11-5

VISHAY VQ1000P, VQ1000J Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual