VISHAY TSUS4400 Technical data
TSUS4400
Vishay Telefunken
GaAs Infrared Emitting Diode in ø 3 mm (T–1) Package
Description
TSUS4400 is an infrared emitting diode in standard
GaAs on GaAs technology, molded in a clear, blue
tinted plastic package. The device is spectrally
matched to silicon photodetectors.
94 8488
Features
D
Low forward voltage
D
High radiant power and radiant intensity
D
Suitable for DC and high pulse current operation
D
Standard T–1(ø 3 mm) package
D
Angle of half intensity ϕ = ± 18
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 950 nm
°
Applications
Infrared remote control systems with small package and low cost requirements in combination with silicon photo
detectors. Infrared source in reflective sensors, tape end detection.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
t x 5sec, 2 mm from case
R
F
FM
FSM
V
amb
stg
T
sd
thJA
5 V
100 mA
200 mA
2 A
170 mW
j
100
–55...+100
–55...+100
260
450 K/W
°
C
°
C
°
C
°
C
Document Number 81054
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
TSUS4400
g
y
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1.5 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Breakdown Voltage IR = 100 mA V
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
IF = 1.5 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 20 mA TK
F
F
VF
R
(BR)
j
e
e
f
e
f
5 40 V
7 15 mW/sr
e
Angle of Half Intensity ϕ ±18 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
IF = 1.5 A t
Fall Time IF = 100 mA t
IF = 1.5 A t
l
Dl
p
l
p
r
r
f
f
1.3 1.7 V
2.2 V
–1.3 mV/K
100
m
30 pF
140 mW/sr
20 mW
–0.8 %/K
950 nm
50 nm
0.2 nm/K
800 ns
400 ns
800 ns
400 ns
A
Typical Characteristics (T
250
200
150
R
100
V
50
P – Power Dissipation ( mW )
0
020406080
T
94 8029 e
Figure 1. Power Dissipation vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
thJA
= 25_C unless otherwise specified)
amb
100
125
100
75
50
F
I – Forward Current ( mA )
25
0
020406080
T
94 7916 e
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
R
thJA
100
www.vishay.de • FaxBack +1-408-970-5600
2 (5) Rev. 2, 20-May-99
Document Number 81054
Loading...