TSUS4400
Vishay Telefunken
GaAs Infrared Emitting Diode in ø 3 mm (T–1) Package
Description
TSUS4400 is an infrared emitting diode in standard
GaAs on GaAs technology, molded in a clear, blue
tinted plastic package. The device is spectrally
matched to silicon photodetectors.
94 8488
Features
D
Low forward voltage
D
High radiant power and radiant intensity
D
Suitable for DC and high pulse current operation
D
Standard T–1(ø 3 mm) package
D
Angle of half intensity ϕ = ± 18
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 950 nm
°
Applications
Infrared remote control systems with small package and low cost requirements in combination with silicon photo
detectors. Infrared source in reflective sensors, tape end detection.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
t x 5sec, 2 mm from case
R
F
FM
FSM
V
amb
stg
T
sd
thJA
5 V
100 mA
200 mA
2 A
170 mW
j
100
–55...+100
–55...+100
260
450 K/W
°
C
°
C
°
C
°
C
Document Number 81054
Rev. 2, 20-May-99
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1 (5)
TSUS4400
g
y
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1.5 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Breakdown Voltage IR = 100 mA V
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
IF = 1.5 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 20 mA TK
F
F
VF
R
(BR)
j
e
e
f
e
f
5 40 V
7 15 mW/sr
e
Angle of Half Intensity ϕ ±18 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
IF = 1.5 A t
Fall Time IF = 100 mA t
IF = 1.5 A t
l
Dl
p
l
p
r
r
f
f
1.3 1.7 V
2.2 V
–1.3 mV/K
100
m
30 pF
140 mW/sr
20 mW
–0.8 %/K
950 nm
50 nm
0.2 nm/K
800 ns
400 ns
800 ns
400 ns
A
Typical Characteristics (T
250
200
150
R
100
V
50
P – Power Dissipation ( mW )
0
020406080
T
94 8029 e
Figure 1. Power Dissipation vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
thJA
= 25_C unless otherwise specified)
amb
100
125
100
75
50
F
I – Forward Current ( mA )
25
0
020406080
T
94 7916 e
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
R
thJA
100
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2 (5) Rev. 2, 20-May-99
Document Number 81054
TSUS4400
Vishay Telefunken
1
10
tp/T=0.01, IFM = 2 A
0.02
0
10
0.05
0.1
F
I – Forward Current ( A )
0.2
0.5
–1
10
–2
10
–1
10
0
10
1
10
2
10
tp – Pulse Duration ( ms )94 7947 e
Figure 3. Pulse Forward Current vs. Pulse Duration
4
10
3
10
2
10
1
10
F
0
I – Forward Current ( mA )
10
1000
100
10
1
e
I – Radiant Intensity ( mW/sr )
0.1
0
10
1
10
2
10
3
10
10
IF – Forward Current ( mA )94 7982 e
Figure 6. Radiant Intensity vs. Forward Current
1000
100
10
– Radiant Power ( mW )
1
e
F
4
–1
10
0123
V
94 7996 e
– Forward Voltage ( V )
F
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF = 10 mA
1.0
0.9
Frel
0.8
V – Relative Forward Voltage
0.7
020406080
T
94 7990 e
– Ambient Temperature ( °C )
amb
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
100
4
0.1
0
10
1
10
2
10
3
10
4
10
IF – Forward Current ( mA )947980
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
IF = 20 mA
F
0.8
e rel e rel
I ;
0.4
0
–10 10 500 100
T
94 7993 e
– Ambient Temperature ( °C )
amb
140
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Document Number 81054
Rev. 2, 20-May-99
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3 (5)
TSUS4400
Vishay Telefunken
1.25
1.0
0.75
0.5
– Relative Radiant Power
e rel
0.25
F
IF = 100 mA
0
900 950
94 7994 e
l
– Wavelength ( nm )
1000
1.0
0.9
0.8
e rel
0.7
I – Relative Radiant Intensity
0.4 0.2 0 0.2 0.4
0.6
94 7983 e
0°
10°20
°
30°
40°
50°
60°
70°
80°
0.6
Figure 9. Relative Radiant Power vs. Wavelength
Dimensions in mm
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
95 10914
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4 (5) Rev. 2, 20-May-99
Document Number 81054
TSUS4400
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 81054
Rev. 2, 20-May-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
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