PRODUCT SUMMARY
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
N-Channel 240 -V (D-S) MOSFET
Part Number VDS Min (V)
TN2404K
TN2404KL/BS107KL
r
(W)
DS(on)
4 @ VGS = 10 V 0.8 to 2.0 0.2
4 @ VGS = 10 V 0.8 to 2.0 0.3
V
(V) ID (A) Qg (Typ)
GS(th)
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: 4 W
D Secondary Breakdown Free: 260 V
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
TO-236
(SOT-23)
G
1
D
3
S
2
Top View
TN2404K
Marking Code: K1ywl
K1 = Part Number Code for TN2404K
y = Year Code
w = Week Code
l = Lot Traceability
D Low Offset Voltage
D Full-Voltage Operation
D Easily Driven Without Buffer
D Low Error Voltage
D No High-Temperature
“Run-Away”
TO-226AA
(TO-92)
G
S
D
1
2
3
Top View
TN2404KL
Device Marking
Front View
“S” TN
2404KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
D High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays,
Transistors, etc.
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
TO-92-18RM
(TO-18 Lead Form)
D
G
S
1
2
3
Top View
BS107KL
Device Marking
Front View
“S” BS
107KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol TN2404K TN2404KL/BS107KL Unit
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Power Dissipation
Thermal Resistance, Junction-to-Ambient R
Operating Junction and Storage Temperature Range TJ, T
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on an FR4 board.
Document Number: 72225
S-41761—Rev. B , 04-Oct-04
a
ORDERING INFORMATION
Standard
Part Number
TN2404K-T1 TN2404K-T1—E3 With Tape and Reel Folding Option
TN2404KL-TR1 TN2404KL-TR1—E3
BS107KL-TR1 BS107KL-TR1—E3
_
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
Lead (Pb)-Free
Part Number
I
P
DS
GS
I
D
DM
D
thJA
stg
Spool Option
Option
"20
0.2 0.3
0.16 0.25
0.8 1.4
0.36 0.8
0.23 0.51
b
350
−55 to 150
240
156
A
W
_C/W
_C
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TN2404K/TN2404KL/BS107KL
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Min Typ
Static
Limits
a
Max Unit
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage V
Dynamic
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Time
urn-
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only , and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability .
a
-
me
b
b
(BR)DSS
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
fs
SD
g
gs
gd
t
d(on)
t
r
t
d(off)
t
r
VGS = 0 V, ID = 100 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V "100 nA
VDS = 192 V, VGS = 0 V 1
TJ = 55_C
VDS = 10 V, VGS =10 V 0.8
VDS = 10 V, VGS = 4.5 V 0.5
VGS = 10 V, ID = 0.3 A 2.2 4
VGS = 4.5 V, ID = 0.2 A 2.3 4
VGS = 2.5 V, ID = 0.1 A 2.4 6
VDS = 10 V, ID = 0.3 A 1.6 S
IS = 0.3 A, VGS = 0 V 0.8 1.2 V
VDS = 192 V, VGS = 10 V, ID = 0.5 A
VDD = 60 V, RL = 200 W
ID ] 0.3 A, V
= 10 V, RG = 25 W
GEN
240 257
0.8 1.65 2.0
4.87 8
0.56
1.53
5 10
12 20
35 60
16 25
V
10
mA
A
W
nC
n
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2
Document Number: 72225
S-41761—Rev. B , 04-Oct-04