VISHAY TN2404K, TN2404KL, BS107KL User Manual

VISHAY TN2404K, TN2404KL, BS107KL User Manual

TN2404K/TN2404KL/BS107KL

Vishay Siliconix

N-Channel 240-V (D-S) MOSFET

PRODUCT SUMMARY

Part Number

VDS Min (V)

rDS(on) (W)

VGS(th) (V)

ID (A)

Qg (Typ)

TN2404K

240

4 @ VGS = 10 V

0.8 to 2.0

0.2

4.87

TN2404KL/BS107KL

4 @ VGS = 10 V

0.8 to 2.0

0.3

 

 

FEATURES

BENEFITS

APPLICATIONS

D Low On-Resistance: 4 W

D Low Offset Voltage

D High-Voltage Drivers: Relays, Solenoids,

D Secondary Breakdown Free: 260 V

D Full-Voltage Operation

Lamps, Hammers, Displays,

D Low Power/Voltage Driven

D Easily Driven Without Buffer

Transistors, etc.

D Telephone Mute Switches, Ringer Circuits

D Low Input and Output Leakage

D Low Error Voltage

D Power Supply, Converters

D Excellent Thermal Stability

D No High-Temperature

D Motor Control

 

“Run-Away”

 

TO-236

 

TO-226AA

 

 

TO-92-18RM

 

 

(SOT-23)

 

(TO-92)

 

(TO-18 Lead Form)

 

G

1

S

1

Device Marking

D

1

Device Marking

 

 

Front View

 

 

 

3

D

 

 

 

 

Front View

 

 

“S” TN

 

 

 

 

 

G

2

G

2

“S” BS

S

2

2404KL

 

 

xxyy

 

 

107KL

 

 

 

 

 

 

 

 

 

 

 

 

 

xxyy

 

 

D

3

“S” = Siliconix Logo

S

3

“S” = Siliconix Logo

 

Top View

xxyy = Date Code

 

 

 

 

 

 

 

 

 

xxyy = Date Code

 

 

 

 

 

 

 

 

TN2404K

 

 

 

 

 

 

Marking Code: K1ywl

K1 = Part Number Code for TN2404K y = Year Code

w = Week Code

l = Lot Traceability

Top View

Top View

TN2404KL

BS107KL

 

 

 

 

ORDERING INFORMATION

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Standard

 

Lead (Pb)-Free

 

 

 

 

 

 

 

 

 

Part Number

 

Part Number

 

 

Option

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TN2404K-T1

 

TN2404K-T1—E3

 

With Tape and Reel Folding Option

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TN2404KL-TR1

TN2404KL-TR1—E3

 

Spool Option

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BS107KL-TR1

 

BS107KL-TR1—E3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

 

Parameter

 

 

 

Symbol

 

TN2404K

 

TN2404KL/BS107KL

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain-Source Voltage

 

 

 

VDS

 

 

240

 

 

V

Gate-Source Voltage

 

 

 

VGS

 

 

"20

 

 

 

 

 

 

 

 

 

 

Continuous Drain Current (TJ = 150_C)

 

TA= 25_C

 

ID

 

0.2

 

0.3

 

 

TA= 70_C

 

 

0.16

 

0.25

A

 

 

 

 

 

 

 

 

Pulsed Drain Currenta

 

 

 

 

I

 

0.8

 

1.4

 

 

 

 

 

 

 

DM

 

 

 

 

 

 

 

Power Dissipation

 

TA= 25_C

 

PD

 

0.36

 

0.8

W

 

TA= 70_C

 

 

0.23

 

0.51

 

 

 

 

 

 

 

 

 

Thermal Resistance, Junction-to-Ambient

 

 

 

 

R

 

350b

 

156

_C/W

 

 

 

 

 

 

thJA

 

 

 

 

 

 

 

Operating Junction and Storage Temperature Range

 

 

TJ, Tstg

 

 

−55 to 150

_C

Notes

 

 

 

 

 

 

 

 

 

 

 

 

a. Pulse width limited by maximum junction temperature.

 

 

 

 

 

 

 

 

 

 

 

b. Surface mounted on an FR4 board.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Document Number: 72225

 

 

 

 

 

 

 

 

 

 

www.vishay.com

S-41761—Rev. B , 04-Oct-04

 

 

 

 

 

 

 

 

 

 

 

1

TN2404K/TN2404KL/BS107KL

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

 

 

 

 

 

 

 

 

Limits

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

Test Conditions

Min

Typa

Max

Unit

Static

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 100 mA

240

257

 

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.8

1.65

2.0

 

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

 

 

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 192 V, VGS = 0 V

 

 

1

mA

 

 

 

 

TJ = 55_C

 

 

10

 

 

 

 

 

 

 

 

 

On-State Drain Currentb

I

VDS = 10 V, VGS =10 V

0.8

 

 

A

 

 

 

 

 

 

 

 

 

D(on)

VDS = 10 V, VGS = 4.5 V

0.5

 

 

 

 

 

 

 

 

 

 

VGS = 10 V, ID = 0.3 A

 

2.2

4

 

Drain-Source On-Resistanceb

r

V

GS

= 4.5 V, I = 0.2 A

 

2.3

4

W

 

DS(on)

 

D

 

 

 

 

 

 

VGS = 2.5 V, ID = 0.1 A

 

2.4

6

 

Forward Transconductanceb

g

V

DS

= 10 V, I = 0.3 A

 

1.6

 

S

 

fs

 

 

D

 

 

 

 

Diode Forward Voltage

VSD

IS = 0.3 A, VGS = 0 V

 

0.8

1.2

V

Dynamica

 

 

 

 

 

 

 

 

 

 

Total Gate Charge

Qg

 

 

 

 

 

 

4.87

8

 

 

 

 

 

 

 

 

Gate-Source Charge

Qgs

VDS = 192 V, VGS = 10 V, ID = 0.5 A

 

0.56

 

nC

Gate-Drain Charge

Qgd

 

 

 

 

 

 

1.53

 

 

Turn-On Time

td(on)

 

 

 

 

 

 

5

10

 

tr

VDD = 60 V, RL = 200 W

 

12

20

nS

 

 

turn-Off Time

td(off)

ID ] 0.3 A, VGEN = 10 V, RG = 25 W

 

35

60

 

tr

 

 

 

 

 

 

16

25

 

 

 

 

 

 

 

 

 

Notes

a.For DESIGN AID ONLY, not subject to production testing.

b.Pulse test: PW v300 ms duty cycle v2%.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

www.vishay.com

Document Number: 72225

2

S-41761—Rev. B , 04-Oct-04

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