VISHAY TCND5000 Technical data

TCND5000

r

Vishay Semiconductors

Reflective Optical Sensor with PIN Photodiode Output

Description

The TCND5000 is a reflective sensor that includes an infrared emitter and PIN photodiode in a surface

mount package which blocks visible light.

Features

• Package type: Surface mount

• Detector type: PIN Photodiode

• Dimensions: L 6 mm x W 4.3 mm x H 3.75 mm

• Peak operating distance: 6 mm

• Peak operating range: 2 mm to 25 mm

• Typical output current under test: I

> 0.11 µA

ra

• Daylight blocking filter

• High linearity

• Emitter wavelength 940 nm

• Lead (Pb)-free soldering released

• Lead (Pb)-free component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

• Minimum order quantity 2000 pcs, 2000 pcs/reel

e3

Detector

19967

Applications

• Proximity sensor

• Object sensor

• Motion sensor

• Touch key

Top view

A

C

Marking area

A

Emitte

C

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Input (Emitter)

Parameter Test condition Symbol Val ue Unit

Reverse Voltage

Forward current

t

= 50 µs, T = 2 ms,

Peak Forward Current

Power Dissipation

Junction Temperature

p

T

amb

= 25 °C

Output (Detector)

Parameter Test condition Symbol Val ue Unit

Reverse Voltage

Power Dissipation

Junction Temperature

V

R

I

F

I

FM

P

V

T

j

V

R

P

V

T

j

5V

100 mA

500 mA

190 mW

100 °C

60 V

75 mW

100 °C

Document Number 83795

Rev. 1.2, 04-Sep-06

www.vishay.com

1

TCND5000

Vishay Semiconductors

Sensor

Paramete r Test condition Symbol Value Unit

Operating Temperature Range

Storage Temperature Range

Soldering Temperature acc. fig. 14

120

100

80

60

40

20

- Forward Current (mA)

F

I

0

20

0

10

16188

T

- Ambient Temperature (°C)

amb

Figure 1. Forward Current Limit vs. Ambient Temperature

50

30

40

70

60

100

90

80

T

amb

T

stg

T

sd

- 40 to + 85 °C

- 40 to + 100 °C

260 °C

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Input (Emitter)

Paramete r Test condition Symbol Min Ty p. Max Unit

= 20 mA, tp = 20 ms V

Forward Voltage

Temp. Coefficient of V

Reverse Current

Junction Capacitance

Radiant Intensity

F

I

F

IF = 1 mA TK

V

= 5 V I

R

= 0 V, f = 1 MHz, E = 0 C

V

R

I

= 20 mA, tp = 20 ms I

F

VF

R

j

e

Angle of Half Intensity ϕ ± 12 deg

Peak Wavelength

Spectral Bandwidth

Temp. Coefficient of λ

Rise Time

Fall Time

I

F

I

= 100 mA

F

p

IF = 100 mA TKλ

= 100 mA t

I

F

= 100 mA t

I

F

p

Δλ 50 nm

p

r

f

930 940 nm

= 100 mA λ

Virtual Source Diameter Method: 63 % encircled energy Ø 1.2 mm

see figures 2 to 8 accordingly

1.2 1.5 V

- 1.3 mV/K

10 µA

25 pF

775mW/sr

0.2 nm/K

800 ns

www.vishay.com

2

Document Number 83795

Rev. 1.2, 04-Sep-06

TCND5000

Vishay Semiconductors

Output (Detector)

Parameter Test condition Symbol Min Ty p . Max Unit

= 50 mA V

Forward Voltage

Breakdown Voltage

Reverse Dark Current

Diode capacitance

Reverse Light Current

Temp. Coefficient of I

ra

Angle of Half Intensity ϕ ± 15 deg

Wavelength of Peak Sensitivity

Range of Spectral Bandwidth

see figures 9 to 12 accordingly

Sensor

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p . Max Unit

Reverse Light Current V

I

F

= 100 µA V

I

R

= 10 V, E = 0 I

V

R

V

= 5 V, f = 1 MHz, E = 0 C

R

E

= 1 mW/cm

e

2

λ = 950 nm, VR = 5 V

VR = 5 V, λ = 870 nm TK

λ

= 2.5 V, IF = 20 mA

R

D = 30 mm reflective mode: see figure 2

F

BR

ro

D

I

ra

ira

λ

p

0.5

I

ra

60 V

110 nA

1.0 1.3 V

110nA

1.8 pF

12 µA

0.2 %/K

930 nm

840 to 1050 nm

D = 30 mm

30 mm

Kodak grey card

2 0 % Reflectivity

d = 26.25 mm

18223

Figure 2. Test Circuit

Document Number 83795

Rev. 1.2, 04-Sep-06

www.vishay.com

3