VISHAY TCND3000 Technical data
Reflective Sensor for Touchless Switch
Description
TCND3000 is a reflective optical sensor for applications using the HALIOS® (H
pendent O
infrared emitter and a photodetector forming the optical sensing path. According to the HALIOS principle a
second infrared emitter is used for compensation of
disturbing ambient light. Optoelectronic parameters of
the sensor are matched to the corresponding integrated circuit E909.01, manufactured by ELMOS
Semiconductor AG (www.elmos.de).
ptical System) principle. It consists of an
Features
• Package type: Surface mount
• Detector type: PIN Photodiode
• Dimensions:
L 4.83 mm x W 2.54 mm x H 2.21 mm
• Peak operating distance: 20 mm
• Peak operating range: 10 mm to 20 mm
• Typical output current under test: I
• Lead (Pb)-free soldering released
• Lead (Pb)-free component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
• Emitter wavelength 885 nm
• Daylight blocking filter
• Touch distance: 10 mm*)
• Proximity distance: 20 mm*)
• High ambient light suppression for sunlight:
≤ 200 klx
• High ambient light suppression for CIE standard
illuminant A: ≤ 100 klx
• Minimum order quantity 800 pcs, 800 pcs/reel
*) Using E909.01 interface ASIC and Kodak grey card
with 20 % diffuse reflection
igh Ambient Light Inde-
e4
= 5.6 µA
C
Applications
• Optical switches for general purpose
TCND3000
Vishay Semiconductors
Document Number 84606
Rev. 1.2, 23-Aug-06
www.vishay.com
1
TCND3000
R
thJA
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Sensor
Parameter Test condition Symbol Val ue Unit
≤ 25 °C P
Power dissipation
Storage temperature range
Operating temperature range
Thermal resistance
junction/ambient
Soldering temperature acc. figure 7
IR Emitter LEDS (Transmitter)
Parameter Test condition Symbol Val ue Unit
Reverse voltage
Forward current
Peak forward current
Junction temperature
T
amb
T
s
t
ps
= 8 µs
= 4 µs
V
T
stg
T
amb
R
thJA
T
sd
V
RS
I
FS
I
FS
T
js
180 mW
- 40 to + 100 °C
- 40 to + 85 °C
450 K/W
260 °C
5V
50 mA
100 mA
105 °C
IR Emitter LEDC (Compensation)
Parameter Test condition Symbol Val ue Unit
Reverse voltage
Forward current
= 8 µs
T
Peak forward current
s
t
pc
= 4 µs
Junction temperature
Detector
Parameter Test condition Symbol Val ue Unit
Reverse voltage
Junction temperature
200
150
100
- Power Dissipation (mW)
V
50
P
V
RC
I
FC
I
FC
T
js
V
RD
T
jD
5V
50 mA
100 mA
105 °C
5V
105 °C
0
0
20
T
- Ambient Temperature (°C)
amb
100
806040
Figure 1. Power Dissipation Limit vs. Ambient Temperature
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Document Number 84606
Rev. 1.2, 23-Aug-06
TCND3000
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Sensor
Parameter Test condition Symbol Min Ty p. Max Unit
Light current Kodak Grey Card
I
CA
20 % diffuse reflection
distance: 1 cm
I
= 10 mA
FS
Optical crosstalk sensing path no reflective medium
I
= 10 mA
FS
= 2 mA I
Compensation current
I
FC
I
CA
CR
IR Emitter LEDS (Transmitter)
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse voltage
= 10 mA
FS
= 20 ms
t
p
I
= 10 µA V
RS
Junction capacitance C
Radiant intensity I
= 10 mA
FS
= 20 ms
t
p
Angle of half intensity
= 10 mA λ
Peak wavelength
Spectral bandwidth
I
FS
= 10 mA Δλ
I
FS
Virtual source diameter DIN EN ISO 1146/1:2005 Ø 1.4 mm
V
FS
RS
jS
I
e
ϕ
S
ps
s
5V
875 885 nm
1.2 µA
0.9 µA
5 µA
1.3 V
50 pF
222mW/sr
± 20 deg
42 nm
IR Emitter LEDC (Compensation)
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse voltage
= 10 mA
FC
= 20 ms
t
pC
I
= 10 µA V
RC
Junction capacitance
= 10 mA λ
Peak wavelength
Spectral bandwidth
I
FC
= 10 mA Δλ
I
FC
Detector
Parameter Test condition Symbol Min Ty p. Max Unit
= 50 mA V
Forward voltage
Breakdown voltage I
Reverse dark current
Reverse light current
Temp. coefficient of I
ra
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
I
FD
= 100 µA
RD
E = 0
= 10 V, E = 0 I
V
RD
= 1 mW/cm
E
e
2
λ = 870 nm
V
= 5 V
RD
VRD = 5 V
λ = 870 nm
V
TK
V
C
(BR)
I
ϕ
λ
λ
FC
RC
pC
FD
r0
ra
0.5
1.3 V
5V
jC
50 pF
885 nm
C
42 nm
1.0 1.3 V
5V
110nA
5.6 µA
Ira
D
p
0.2 %/K
± 20 deg
910 nm
790...1020 nm
Document Number 84606
Rev. 1.2, 23-Aug-06
www.vishay.com
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