VISHAY TCMT11, TCMT4100 Technical data

TCMT11.. Series/TCMT4100

Vishay Semiconductors

Optocoupler, Phototransistor Output, Single/Quad Channel,
Half Pitch Mini-Flat Package

Features

• Low profile package (half pitch)

• AC Isolation test voltage 3750 V

• Low coupling capacitance of typical 0.3 pF

• Current Transfer Ratio (CTR) selected
into groups

• Low temperature coefficient of CTR

• Wide ambient temperature range

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E76222 System Code M, Double
Protection

• C-UL CSA 22.2 bulletin 5A, Double Protection

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending

Applications

• Programmable logic controllers

• Modems

• Answering machines

• General applications

Description

The TCMT11.. Series consist of a phototransistor
optically coupled to a gallium arsenide infrared-emit­ting diode in an 4-pin (single channel) up to 16-pin
(quad channel) package.

The elements are mounted on one leadframe provid­ing a fixed distance between input and output for high­est safety requirements.

RMS

16467-1

CE

12 8

AC

4PIN

16 PIN

C

9

Order Information

Part Remarks

TCMT1100 CTR 50 - 600 %, SOP-4

TCMT1102 CTR 63 - 125 %, SOP-4

TCMT1103 CTR 100 - 200 %, SOP-4

TCMT1104 CTR 160 - 320 %, SOP-4

TCMT1105 CTR 50 - 150 %, SOP-4

TCMT1106 CTR 100 - 300 %, SOP-4

TCMT1107 CTR 80 - 160 %, SOP-4

TCMT1108 CTR 130 - 260 %, SOP-4

TCMT1109 CTR 200 - 400 %, SOP-4

TCMT4100 CTR 50 - 600 %, Quad

Channel, SOP-16

Document Number 83510

Rev. 1.8, 01-Dec-06

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1

TCMT11.. Series/TCMT4100

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Paramete r Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Forward surge current t

≤ 10 µs I

p

Power dissipation P

Junction temperature T

Output

Paramete r Test condition Symbol Val ue Unit

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

/T = 0.5, tp ≤ 10 ms I

p

R

F

FSM

diss

j

CEO

ECO

C

CM

diss

j

6V

60 mA

1.5 A

100 mW

125 °C

70 V

7V

50 mA

100 mA

150 mW

125 °C

Coupler

Paramete r Test condition Symbol Val ue Unit

AC isolation test voltage (RMS) Related to standard climate 23/

50 DIN 50014

Total power dissipation P

Operating ambient temperature
range

Storage temperature range T

Soldering temperature T

V

T

ISO

tot

amb

stg

sld

3750 V

RMS

250 mW

- 40 to + 100 °C

- 40 to + 100 °C

260 °C

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Document Number 83510

Rev. 1.8, 01-Dec-06

TCMT11.. Series/TCMT4100

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Junction capacitance V

= 50 mA V

F

= 0 V, f = 1 MHz C

R

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage I

Emitter collector voltage I

Collector dark current V

= 100 µA V

C

= 100 µA V

E

= 20 V, IF = 0, E = 0 I

CE

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter saturation
voltage

Cut-off frequency I

Coupling capacitance f = 1 MHz C

= 10 mA, IC = 1 mA V

I

F

= 10 mA, VCE = 5 V,

F

R

= 100 Ω

L

F

j

CEO

ECO

CEO

CEsat

f

c

k

70 V

7V

1.25 1.6 V

50 pF

100 nA

0.3 V

100 kHz

0.3 pF

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

I

C/IF

VCE = 5 V, IF = 5 mA TCMT1100 CTR 50 600 %

V

= 5 V, IF = 10 mA TCMT1102 CTR 53 125 %

CE

TCMT1103 CTR 100 200 %

TCMT1104 CTR 160 320 %

= 5 V, IF = 5 mA TCMT1105 CTR 50 150 %

V

CE

TCMT1106 CTR 100 300 %

TCMT1107 CTR 80 160 %

TCMT1108 CTR 130 260 %

TCMT1109 CTR 200 400 %

TCMT4100 CTR 50 600 %

Document Number 83510

Rev. 1.8, 01-Dec-06

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3

TCMT11.. Series/TCMT4100

Vishay Semiconductors

Switching Characteristics

Paramete r Test condition Symbol Min Typ . Max Unit

Delay time V

Rise time V

Fall time V

Storage time V

Turn-on time V

Turn-off time V

Turn-on time V

Turn-off time V

I

I

F

F

50 100

95 10804

0

RG = 50

t

p

= 0.01

T

tp = 50 µs

Figure 1. Test circuit, non-saturated operation

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 2)

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 2)

+ 5 V

IC = 2 mA;

Channel I

Channel II

adjusted through
input amplitude

Oscilloscope
R

= 1 M

L

= 20 pF

C

L

t

d

t

r

t

f

t

s

t

on

t

off

t

on

t

off

I

F

0

I

C

100 %

90 %

10 %

0

t

t

d

t

r

on

pulse duration
delay time
rise time
turn-on time

t

p

t

d

t

r

(= t + t )

t

on

d

3.0 µs

3.0 µs

4.7 µs

0.3 µs

6.0 µs

5.0 µs

9.0 µs

18.0 µs

t

p

r

t

t

f

s

t

off

t

s

t

f

t

(= t s+t f)turn-off time

off

96 11698

t

t

storage time
fall time

Figure 3. Switching Times

0

R G=5 0
t

p

= 0.01

T

t p=5 0 µs

95 10843

Figure 2. Test circuit, saturated operation

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4

1k

Ω

+5V

I

C

Channel I

Channel II

Oscilloscope

R

M 1

≥

Ω

L

C

20 pF

≤

L

I

=1 0m A

I

F

F

Ω

Ω

50

Document Number 83510

Rev. 1.8, 01-Dec-06

Typical Characteristics

1000

C

T

= 25 °C, unless otherwise specified

amb

TCMT11.. Series/TCMT4100

Vishay Semiconductors

300

Coupled device

250

200

Phototransistor

150

IR-diode

100

50

tot

P - Total Power Dissipation (mW)

0

04080 120

T

96 11700

- Ambient Temperature (°C)

amb

Figure 4. Total Power Dissipation vs. Ambient Temperature

100

urrent (mA)

10

10000

VCE= 20 V

= 0

I

1000

F

100

with open Base (nA)

10

CEO

I - Collector Dark Current,

1

0255075

95 11026

T

- Ambient Temperature (°C)

amb

100

Figure 7. Collector Dark Current vs. Ambient Temperature

100

VCE = 5 V

10

1

1

F

I - Forward

0.1

96 11862

0

0.2

0.8 0.6

0.4

V

1.0

- Forward Voltage (V)

F

1.2

1.4

1.6

1.8

Figure 5. Forward Current vs. Forward Voltage

2.0

1.5

1.0

0.5

rel

0

CTR - Relative Current Transfer Ratio

- 25 0 25 50

95 11025

- Ambient Temperature (°C)

T

amb

VCE = 5 V

= 5 mA

I

F

Figure 6. Relative Current Transfer Ratio vs.

Ambient Temperature

2.0

75

0.1

C

I - Collector Current (mA)

0.01

0.1 1 10

95 11027

IF- Forward Current (mA)

100

Figure 8. Collector Current vs. Forward Current

100

10

1

C

I - Collector Current (mA)

0.1

0.1 1 10

- Collector Emitter Voltage (V)

95 10985

V

CE

IF= 50 mA

20 mA

10 mA

5 mA

2 mA

1 mA

100

Figure 9. Collector Current vs. Collector Emitter Voltage

Document Number 83510

Rev. 1.8, 01-Dec-06

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5

TCMT11.. Series/TCMT4100

Vishay Semiconductors

1.0

20 %

0.8

CTR = 50 %

0.6

0.4

0.2

0

110

CEsat

V - Collector Emitter Saturation Voltage (V)

95 11028

IC- Collector Current (mA)

10 %

100

Figure 10. Collector Emitter Saturation Voltage vs.

Collector Current

1000

VCE = 5 V

100

10

10

8

t

on

6

t

off

4

2

offon

t/t- Turn on /Turn off Time (µs)

0

04

95 11030

2

- Collector Current (mA)

I

C

Non Saturated

Operation

V

= 5 V

S

R

= 100 Ω

L

6

8

Figure 13. Turn on/off Time vs. Collector Current

CTR - Current Transfer Ratio (%)

1

0.1 1 10

95 11029

IF- Forward Current (mA)

100

Figure 11. Current Transfer Ratio vs. Forward Current

50

Saturated Operation

= 5 V

V

S

= 1 kΩ

R

L

t

off

t

0

01015

5

- Forward Current (mA)

I

F

on

20

offon

t/t- Turn on/Turn off Time (µs)

95 11031

40

30

20

10

Figure 12. Turn on/off Time vs. Forward Current

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Document Number 83510

Rev. 1.8, 01-Dec-06

Package Dimensions in mm

TCMT11.. Series/TCMT4100

Vishay Semiconductors

Package Dimensions in mm

16283

Document Number 83510

Rev. 1.8, 01-Dec-06

15226

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7

TCMT11.. Series/TCMT4100

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

www.vishay.com

8

Document Number 83510

Rev. 1.8, 01-Dec-06

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.