VISHAY TCET1100, TCET1100G Technical data

TCET1100/TCET1100G

Vishay Semiconductors

Optocoupler, Phototransistor Output, High Temperature

Features

• Extra low coupling capacity - typical 0.2 pF

• High Common Mode Rejection

• Low temperature coefficient of CTR

e3

• CTR offered in 9 groups

• Reinforced Isolation provides circuit protection
against electrical shock (Safety Class II)

• Lead-(Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

17197_1

C

E

4

3

12

AC

V

C

DE

Agency Approvals

• UL1577, File No. E76222 System Code U, Double
Protection

• CSA 22.2 bulletin 5A, Double Protection

• BSI: EN 60065:2002, EN 60950:2000
Certificate No. 7081 and 7402

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending

• FIMKO

Applications

Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface
Circuits for safe protective separation against electri-

cal shock according to safety class II (reinforced iso­lation):

• For appl. class I - IV at mains voltage ≤ 300 V

• For appl. class I - III at mains voltage ≤ 600 V accord-

ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747­5-5 pending, table 2.

Description

The TCET110. consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode
in a 4-lead plastic dual inline package.

The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety require­ments.

Isolation materials according to UL94-VO

Pollution degree 2 (DIN/VDE 0110 / resp. IEC 60664)
Climatic classification 55/100/21 (IEC 60068 part 1)
Rated impulse voltage (transient overvoltage)

V

= 8 kV peak

IOTM

Isolation test voltage (partial discharge test voltage)
V

= 1.6 kV

pd

Rated isolation voltage (RMS includes DC)
V

IOWM

= 600 V

(848 V peak)

RMS

Rated recurring peak voltage (repetitive)
V

= 600 V

IORM

RMS

Thickness through insulation ≥ 0.75 mm
Internal creepage distance > 4 mm
Creepage current resistance according to VDE 0303/

IEC 112 Comparative Tracking Index:

CTI ≥ 175

VDE Standards

These couplers perform safety functions according to
the following equipment standards:

DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending

Optocoupler for electrical safety requirements

IEC 60950/EN 60950

Office machines (applied for reinforced isolation for
mains voltage ≤ 400 VRMS)

VDE 0804

Telecommunication apparatus and data processing

IEC 60065

Safety for mains-operated electronic and related
household apparatus

Document Number 83503

Rev. 2.2, 05-Sep-06

www.vishay.com

1

TCET1100/TCET1100G

Vishay Semiconductors

Order Information

Par t Remarks

TCET1100 CTR 50 - 600 %, DIP-4

TCET1101 CTR 40 - 80 %, DIP-4

TCET1102 CTR 63 - 125 %, DIP-4

TCET1103 CTR 100 - 200 %, DIP-4

TCET1104 CTR 160 - 320 %, DIP-4

TCET1105 CTR 50 - 150 %, DIP-4

TCET1106 CTR 100 - 300 %, DIP-4

TCET1107 CTR 80 - 160 %, DIP-4

TCET1108 CTR 130 - 260 %, DIP-4

TCET1109 CTR 200 - 400 %, DIP-4

TCET1100G CTR 50 - 600 %, DIP-4

TCET1101G CTR 40 - 80 %, DIP-4

TCET1102G CTR 63 - 125 %, DIP-4

TCET1103G CTR 100 - 200 %, DIP-4

TCET1104G CTR 160 - 320 %, DIP-4

TCET1105G CTR 50 - 150 %, DIP-4

TCET1106G CTR 100 - 300 %, DIP-4

TCET1107G CTR 80 - 160 %, DIP-4

TCET1108G CTR 130 - 260 %, DIP-4

TCET1109G CTR 200 - 400 %, DIP-4

G = Leadform 10.16 mm; G is not marked on the body

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage

Forward current

Forward surge current

V

R

I

F

t

≤ 10 μsI

p

FSM

6V

60 mA

1.5 A

Output

Parameter Test condition Symbol Val ue Unit

Collector emitter voltage

Emitter collector voltage

Collector current

Collector peak current

/T = 0.5, tp ≤ 10 ms I

t

p

V

V

CEO

ECO

I

C

CM

70 V

7V

50 mA

100 mA

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Document Number 83503

Rev. 2.2, 05-Sep-06

TCET1100/TCET1100G

T

A

θ

CA

T

C

T

JD

T

JE

T

B

θ

EC

θ

EB

θ

DC

θ

DB

θ

BA

θ

DE

T

A

Vishay Semiconductors

Coupler

Parameter Test condition Symbol Value Unit

Isolation test voltage (RMS) t = 1 min

Operating ambient temperature
range

Storage temperature range

Soldering temperature 2 mm from case t ≤ 10 s

V

T

T

T

ISO

amb

stg

sld

5000

- 40 to + 100 °C

- 55 to + 125 °C

260 °C

Thermal Characteristics

The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the tem­peratures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB,
layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics
of Optocouplers Application note.

Parameter Test condition Symbol Val ue Unit

LED Power dissipation at 25 °C P

Output Power dissipation at 25 °C P

Maximum LED junction temperature T

Maximum output die junction temperature T

Thermal resistance, Junction Emitter to Board

Thermal resistance, Junction Emitter to Case

Thermal resistance, Junction Detector to Board

Thermal resistance, Junction Detector to Case

Thermal resistance, Junction Emitter to Junction Detector

Thermal resistance, Board to Ambient*

Thermal resistance, Case to Ambient*

jmax

jmax

θ

θ

θ

θ

θ

θ

θ

diss

diss

EB

EC

DB

DC

ED

BA

CA

4041 °C/W

V

RMS

100 mW

150 mW

125 °C

125 °C

173 °C/W

149 °C/W

111 °C/W

127 °C/W

173 °C/W

197 °C/W

* For 2 layer FR4 board (4" x 3" x 0.062)

Package

19996

Document Number 83503

Rev. 2.2, 05-Sep-06

www.vishay.com

3

TCET1100/TCET1100G

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

= 50 mA V

Forward voltage

Junction capacitance

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage

Emitter collector voltage

Collector-emitter cut-off current

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter saturation
voltage

Cut-off frequency V

Coupling capacitance f = 1 MHz

I

F

= 0 V, f = 1 MHz C

V

R

= 1 mA V

I

C

= 100 μAV

I

E

= 20 V, If = 0, E = 0 I

V

CE

= 10 mA, IC = 1 mA V

I

F

= 5 V, IF = 10 mA,

CE

= 100 Ω

R

L

F

j

CEO

ECO

CEO

CEsat

f

c

C

k

70 V

7V

1.25 1.6 V

50 pF

10 100 nA

0.3 V

110 kHz

0.3 pF

Current Transfer Ratio

Parameter Test condition Par t Symbol Min Ty p . Max Unit

I

C/IF

VCE = 5 V, IF = 1 mA

V

= 5 V, IF = 5 mA

CE

V

= 5 V, IF = 10 mA

CE

TCET1101

TCET1101G

TCET1102

TCET1102G

TCET1103

TCET1103G

TCET1104

TCET1104G

TCET1100

TCET1100G

TCET1105

TCET1105G

TCET1106

TCET1106G

TCET1107

TCET1107G

TCET1108

TCET1108G

TCET1109

TCET1109G

TCET1101

TCET1101G

TCET1102

TCET1102G

TCET1103

TCET1103G

TCET1104

TCET1104G

CTR 13 30 %

CTR 22 45 %

CTR 34 70 %

CTR 56 90 %

CTR 50 600 %

CTR 50 150 %

CTR 100 300 %

CTR 80 160 %

CTR 130 260 %

CTR 200 400 %

CTR 40 80 %

CTR 63 125 %

CTR 100 200 %

CTR 160 320 %

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Document Number 83503

Rev. 2.2, 05-Sep-06