VISHAY TCET1100, TCET1100G Technical data

TCET1100/TCET1100G

Vishay Semiconductors

Optocoupler, Phototransistor Output, High Temperature

Features

• Extra low coupling capacity - typical 0.2 pF

• High Common Mode Rejection

• Low temperature coefficient of CTR

e3

• CTR offered in 9 groups

• Reinforced Isolation provides circuit protection
against electrical shock (Safety Class II)

• Lead-(Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

17197_1

C

E

4

3

12

AC

V

C

DE

Agency Approvals

• UL1577, File No. E76222 System Code U, Double
Protection

• CSA 22.2 bulletin 5A, Double Protection

• BSI: EN 60065:2002, EN 60950:2000
Certificate No. 7081 and 7402

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending

• FIMKO

Applications

Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface
Circuits for safe protective separation against electri-

cal shock according to safety class II (reinforced iso­lation):

• For appl. class I - IV at mains voltage ≤ 300 V

• For appl. class I - III at mains voltage ≤ 600 V accord-

ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747­5-5 pending, table 2.

Description

The TCET110. consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode
in a 4-lead plastic dual inline package.

The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety require­ments.

Isolation materials according to UL94-VO

Pollution degree 2 (DIN/VDE 0110 / resp. IEC 60664)
Climatic classification 55/100/21 (IEC 60068 part 1)
Rated impulse voltage (transient overvoltage)

V

= 8 kV peak

IOTM

Isolation test voltage (partial discharge test voltage)
V

= 1.6 kV

pd

Rated isolation voltage (RMS includes DC)
V

IOWM

= 600 V

(848 V peak)

RMS

Rated recurring peak voltage (repetitive)
V

= 600 V

IORM

RMS

Thickness through insulation ≥ 0.75 mm
Internal creepage distance > 4 mm
Creepage current resistance according to VDE 0303/

IEC 112 Comparative Tracking Index:

CTI ≥ 175

VDE Standards

These couplers perform safety functions according to
the following equipment standards:

DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending

Optocoupler for electrical safety requirements

IEC 60950/EN 60950

Office machines (applied for reinforced isolation for
mains voltage ≤ 400 VRMS)

VDE 0804

Telecommunication apparatus and data processing

IEC 60065

Safety for mains-operated electronic and related
household apparatus

Document Number 83503

Rev. 2.2, 05-Sep-06

www.vishay.com

1

TCET1100/TCET1100G

Vishay Semiconductors

Order Information

Par t Remarks

TCET1100 CTR 50 - 600 %, DIP-4

TCET1101 CTR 40 - 80 %, DIP-4

TCET1102 CTR 63 - 125 %, DIP-4

TCET1103 CTR 100 - 200 %, DIP-4

TCET1104 CTR 160 - 320 %, DIP-4

TCET1105 CTR 50 - 150 %, DIP-4

TCET1106 CTR 100 - 300 %, DIP-4

TCET1107 CTR 80 - 160 %, DIP-4

TCET1108 CTR 130 - 260 %, DIP-4

TCET1109 CTR 200 - 400 %, DIP-4

TCET1100G CTR 50 - 600 %, DIP-4

TCET1101G CTR 40 - 80 %, DIP-4

TCET1102G CTR 63 - 125 %, DIP-4

TCET1103G CTR 100 - 200 %, DIP-4

TCET1104G CTR 160 - 320 %, DIP-4

TCET1105G CTR 50 - 150 %, DIP-4

TCET1106G CTR 100 - 300 %, DIP-4

TCET1107G CTR 80 - 160 %, DIP-4

TCET1108G CTR 130 - 260 %, DIP-4

TCET1109G CTR 200 - 400 %, DIP-4

G = Leadform 10.16 mm; G is not marked on the body

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage

Forward current

Forward surge current

V

R

I

F

t

≤ 10 μsI

p

FSM

6V

60 mA

1.5 A

Output

Parameter Test condition Symbol Val ue Unit

Collector emitter voltage

Emitter collector voltage

Collector current

Collector peak current

/T = 0.5, tp ≤ 10 ms I

t

p

V

V

CEO

ECO

I

C

CM

70 V

7V

50 mA

100 mA

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2

Document Number 83503

Rev. 2.2, 05-Sep-06

TCET1100/TCET1100G

T

A

θ

CA

T

C

T

JD

T

JE

T

B

θ

EC

θ

EB

θ

DC

θ

DB

θ

BA

θ

DE

T

A

Vishay Semiconductors

Coupler

Parameter Test condition Symbol Value Unit

Isolation test voltage (RMS) t = 1 min

Operating ambient temperature
range

Storage temperature range

Soldering temperature 2 mm from case t ≤ 10 s

V

T

T

T

ISO

amb

stg

sld

5000

- 40 to + 100 °C

- 55 to + 125 °C

260 °C

Thermal Characteristics

The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the tem­peratures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB,
layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics
of Optocouplers Application note.

Parameter Test condition Symbol Val ue Unit

LED Power dissipation at 25 °C P

Output Power dissipation at 25 °C P

Maximum LED junction temperature T

Maximum output die junction temperature T

Thermal resistance, Junction Emitter to Board

Thermal resistance, Junction Emitter to Case

Thermal resistance, Junction Detector to Board

Thermal resistance, Junction Detector to Case

Thermal resistance, Junction Emitter to Junction Detector

Thermal resistance, Board to Ambient*

Thermal resistance, Case to Ambient*

jmax

jmax

θ

θ

θ

θ

θ

θ

θ

diss

diss

EB

EC

DB

DC

ED

BA

CA

4041 °C/W

V

RMS

100 mW

150 mW

125 °C

125 °C

173 °C/W

149 °C/W

111 °C/W

127 °C/W

173 °C/W

197 °C/W

* For 2 layer FR4 board (4" x 3" x 0.062)

Package

19996

Document Number 83503

Rev. 2.2, 05-Sep-06

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3

TCET1100/TCET1100G

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

= 50 mA V

Forward voltage

Junction capacitance

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage

Emitter collector voltage

Collector-emitter cut-off current

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter saturation
voltage

Cut-off frequency V

Coupling capacitance f = 1 MHz

I

F

= 0 V, f = 1 MHz C

V

R

= 1 mA V

I

C

= 100 μAV

I

E

= 20 V, If = 0, E = 0 I

V

CE

= 10 mA, IC = 1 mA V

I

F

= 5 V, IF = 10 mA,

CE

= 100 Ω

R

L

F

j

CEO

ECO

CEO

CEsat

f

c

C

k

70 V

7V

1.25 1.6 V

50 pF

10 100 nA

0.3 V

110 kHz

0.3 pF

Current Transfer Ratio

Parameter Test condition Par t Symbol Min Ty p . Max Unit

I

C/IF

VCE = 5 V, IF = 1 mA

V

= 5 V, IF = 5 mA

CE

V

= 5 V, IF = 10 mA

CE

TCET1101

TCET1101G

TCET1102

TCET1102G

TCET1103

TCET1103G

TCET1104

TCET1104G

TCET1100

TCET1100G

TCET1105

TCET1105G

TCET1106

TCET1106G

TCET1107

TCET1107G

TCET1108

TCET1108G

TCET1109

TCET1109G

TCET1101

TCET1101G

TCET1102

TCET1102G

TCET1103

TCET1103G

TCET1104

TCET1104G

CTR 13 30 %

CTR 22 45 %

CTR 34 70 %

CTR 56 90 %

CTR 50 600 %

CTR 50 150 %

CTR 100 300 %

CTR 80 160 %

CTR 130 260 %

CTR 200 400 %

CTR 40 80 %

CTR 63 125 %

CTR 100 200 %

CTR 160 320 %

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4

Document Number 83503

Rev. 2.2, 05-Sep-06

TCET1100/TCET1100G

Maximum Safety Ratings

(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1.
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Input

Parameter Test condition Symbol Min Ty p . Max Unit

V

I

P

diss

IOTM

T

F

si

Forward current

Output

Parameter Test condition Symbol Min Ty p . Max Unit

Power dissipation

Coupler

Parameter Test condition Symbol Min Ty p . Max Unit

Rated impulse voltage

Safety temperature

Vishay Semiconductors

130 mA

265 mW

8kV

150 °C

Insulation Rated Parameters

Parameter Test condition Symbol Min Ty p . Max Unit

Partial discharge test voltage ­Routine test

Partial discharge test voltage ­Lot test (sample test)

Insulation resistance

300

250

200

150

100

50

tot

P - Total Power Dissipation (mW)

0

0 25 50 75 125

T

94 9182

- Safety Temperature (°C)

si

Figure 1. Derating diagram

IR-Diode
Isi (mA)

Phototransistor
Psi (mW)

100 %, t

test

= 60 s, t

t

Tr

(see figure 2)

= 500 V R

V

IO

= 500 V, T

V

IO

= 500 V, T

V

IO

(construction test only)

100

= 1 s V

= 10 s,

test

= 100 °C R

amb

= 150 °C

amb

150

Figure 2. Test pulse diagram for sample test according to DIN EN

1.6 kV

8kV

1.3 kV

12

10

11

10

9

10

t1, t2 = 1 to 10 s
t

, t4 = 1 s

3

t

= 10 s

test

= 12 s

t

stres

V

Pd

0

t

1

tTr = 60 s

V

pd

IOTM

V

pd

IO

IO

R

IO

V

V

IOWM

V

13930

IOTM

IORM

60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747

t

2

t

t3t

test

t

stres

Ω

Ω

Ω

4

t

Document Number 83503

Rev. 2.2, 05-Sep-06

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5

TCET1100/TCET1100G

Vishay Semiconductors

Switching Characteristics

Parameter Test condition Symbol Min Ty p. Max Unit

Delay time V

Rise time V

Turn-on time V

Storage time V

Fall time V

Turn-off time V

Turn-on time V

Turn-off time V

I

I

F

0

F

RG = 50
t

p

= 0.01

T

tp = 50 µs

50 100

95 10804

Figure 3. Test circuit, non-saturated operation

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 4)

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 4)

+ 5 V

IC = 2 mA;

Channel I

Channel II

adjusted through
input amplitude

Oscilloscope

= 1 M

R

L

= 20 pF

C

L

t

d

t

r

t

on

t

s

t

f

t

off

t

on

t

off

I

F

0

I

C

100 %

90 %

10 %

t

p

t

d

t

r

t

on

(=t + t )

d

0

r

t

t

d

t

on

pulse duration
delay time
rise time
turn-on time

3.0 µs

3.0 µs

6.0 µs

0.3 µs

4.7 µs

5.0 µs

9.0 µs

10.0 µs

t

p

r

t

t

f

s

t

off

t

s

t

f

t

(= ts+tf)turn-off time

off

96 11698

t

t

storage time
fall time

Figure 5. Switching Times

I

F

0

R G =5 0

Ω

t

p

= 0.01

T

t p =5 0 µs

95 10843

Figure 4. Test circuit, saturated operation

www.vishay.com

6

50

I

F

=1 0m A

Ω

1k

Ω

+5V

I

C

Channel I

Channel II

Oscilloscope

Ω

R

M 1

≥

L

C

20 pF

≤

L

Document Number 83503

Rev. 2.2, 05-Sep-06

Typical Characteristics

1000

C

T

= 25 °C, unless otherwise specified

amb

TCET1100/TCET1100G

Vishay Semiconductors

300

Coupled device

250

200

Phototransistor

150

IR-diode

100

50

tot

P - Total Power Dissipation (mW)

0

04080 120

T

96 11700

- Ambient Temperature (°C)

amb

Figure 6. Total Power Dissipation vs. Ambient Temperature

100

urrent (mA)

10

10000

VCE= 20 V

= 0

I

1000

F

100

with open Base (nA)

10

CEO

I - Collector Dark Current,

1

0255075

95 11026

- Ambient Temperature (°C)

T

amb

100

Figure 9. Collector Dark Current vs. Ambient Temperature

100

VCE = 5 V

10

1

1

F

I - Forward

0.1
0

0.2

0.4

0.8 0.6

1.0

- Forward Voltage (V) 96 11862

V

F

1.2

1.4

1.6

1.8

Figure 7. Forward Current vs. Forward Voltage

2.0

1.5

1.0

0.5

rel

0

CTR - Relative Current Transfer Ratio

- 25 0 25 50

95 11025

T

- Ambient Temperature (°C)

amb

VCE = 5 V

= 5 mA

I

F

Figure 8. Relative Current Transfer Ratio vs.

Ambient Temperature

2.0

0.1

C

I - Collector Current (mA)

0.01

0.1 1 10

95 11027

IF- Forward Current (mA)

100

Figure 10. Collector Current vs. Forward Current

100

IF= 50 mA

10

1

C

I - Collector Current (mA)

0.1

75

0.1 1 10

- Collector Emitter Voltage (V)

95 10985

V

CE

20 mA

10 mA

5 mA

2 mA

1 mA

100

Figure 11. Collector Current vs. Collector Emitter Voltage

Document Number 83503

Rev. 2.2, 05-Sep-06

www.vishay.com

7

TCET1100/TCET1100G

Vishay Semiconductors

1.0

20 %

0.8

CTR = 50 %

0.6

0.4

0.2

0

110

CEsat

V - Collector Emitter Saturation Voltage (V)

95 11028

IC- Collector Current (mA)

10 %

100

Figure 12. Collector Emitter Saturation Voltage vs.

Collector Current

1000

VCE = 5 V

100

10

50

Saturated Operation

= 5 V

V

S

= 1 kΩ

R

L

t

off

t

0

01015

5

- Forward Current (mA)

I

F

on

20

offon

t/t - Turn on/Turn off Time (µs)

95 11031

40

30

20

10

Figure 15. Turn on/off Time vs. Forward Current

CTR - Current Transfer Ratio (%)

1

0.1 1 10

95 11029

IF- Forward Current (mA)

100

Figure 13. Current Transfer Ratio vs. Forward Current

10

8

t

on

6

t

off

4

2

offon

t/t- Turn on /Turn off Time (µs)

0

04

95 11030

2

- Collector Current (mA)

I

C

Non Saturated

Operation

V

= 5 V

S

R

= 100 Ω

L

6

8

Figure 14. Turn on/off Time vs. Collector Current

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8

Document Number 83503

Rev. 2.2, 05-Sep-06

Package Dimensions in mm

TCET1100/TCET1100G

Vishay Semiconductors

Package Dimensions in mm

14789

Document Number 83503

Rev. 2.2, 05-Sep-06

14792

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9

TCET1100/TCET1100G

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

www.vishay.com

10

Document Number 83503

Rev. 2.2, 05-Sep-06

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.