Page 1
TCET1600 up to TCET4600
Vishay Telefunken
Rev. A4, 11–Jan–99 253
Optocoupler with Phototransistor Output
Description
The TCET1600/ TCET2600/ TCET4600 consists of
a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in a 4-lead up to 16-lead
plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
D
For appl. class I – IV at mains voltage ≤ 300 V
D
For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Computer peripheral interface, microprocessor
system interface, telecom equipment.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced
isolation for mains voltage ≤ 400 V
RMS
)
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65
Safety for mains-operated electronic and
related household apparatus
14925
Coll. Emitter
Anode Cath.
4 PIN
8 PIN
16 PIN
13947
C
Order Instruction
Ordering Code CTR Ranking Remarks
TCET1600/ TCET1600G
1)
>20% 4 Pin = Single channel
TCET2600 >20% 8 Pin = Dual channel
TCET4600 >20% 16 Pin = Quad channel
1)
G = Leadform 10.16 mm; G is not market on the body
Page 2
TCET1600 up to TCET4600
Vishay Telefunken
Rev. A4, 11–Jan–99254
Features
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
Certificate number 11027
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 – Double Protection
D
CSA (C–UL) 1577recognized,
file number E-76222 – Double Protection
D
VDE 0884, Certificate number 115667
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
V
IOTM
= 8 kV peak
D
Isolation test voltage
(partical discharge test voltage) V
pd
= 1.6 kV peak
D
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V peak)
D
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
D
Creepage current resistance according to
VDE 0303/IEC 1 12
Comparative Tracking Index: CTI ≥ 175
D
Thickness though insulation ≥ 0.75 mm
D
Internal creepage distance > 4 mm
General features:
D
Isolation materials according to UL94-VO
D
Pollution degree 2
(DIN/VDE 0110 /resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D
Low temperature coefficient of CTR
D
G = Leadform 10.16 mm;
provides creepage distance > 8 mm,
for TCET2600/ TCET4600 optional;
suffix letter ‘G’ is not marked on the optocoupler
D
Coupling System U
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
R
6 V
Forward current I
F
±60 mA
Forward surge current tp ≤ 10 ms I
FSM
±1.5 A
Power dissipation T
amb
≤ 25°C P
V
100 mW
Junction temperature T
j
125
°
C
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7 V
Collector current I
C
50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
CM
100 mA
Power dissipation T
amb
≤ 25°C P
V
150 mW
Junction temperature T
j
125
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit
Isolation test voltage (RMS) t = 1 min V
IO
5 kV
Total power dissipation T
amb
≤ 25°C P
tot
250 mW
Operating ambient temperature range T
amb
–40 to +100
°
C
Storage temperature range T
stg
–55 to +125
°
C
Soldering temperature 2 mm from case t ≤ 10 s T
sd
260
°
C
Page 3
TCET1600 up to TCET4600
Vishay Telefunken
Rev. A4, 11–Jan–99 255
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = ± 50 mA V
F
1.25 1.6 V
Junction capacitance VR = 0 V, f = 1 MHz C
j
50 pF
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 100 mA V
CEO
70 V
Emitter collector voltage IE = 100 mA V
CEO
7 V
Collector dark current VCE = 20 V, If = 0, E = 0 I
CEO
100 nA
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter
saturation voltage
IF ± 10 mA, IC = 1 mA V
CEsat
0.3 V
Cut-off frequency VCE = 5 V, IF ± 10 mA,
R
L
= 100
W
f
c
100 kHz
Coupling capacitance f = 1 MHz C
k
0.3 pF
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
VCE = 5 V, IF = ± 5 mA TCET1600
up to
TCET4600
CTR 0.20 3.0
Page 4
TCET1600 up to TCET4600
Vishay Telefunken
Rev. A4, 11–Jan–99256
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Forward current I
si
130 mA
Output (Detector)
Parameters Test Conditions Symbol Value Unit
Power dissipation T
amb
≤ 25°C P
si
265 mW
Coupler
Parameters Test Conditions Symbol V alue Unit
Rated impulse voltage V
IOTM
8 kV
Safety temperature T
si
150
°
C
Insulation Rated Parameters (according to VDE 0884)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Partial discharge test voltage –
Routine test
100%, t
test
= 1 s V
pd
1.6 kV
Partial discharge test voltage – tTr = 60 s, t
test
= 10 s, V
IOTM
8 kV
gg
Lot test (sample test)
Tr test
(see figure 2)
V
pd
1.3 kV
Insulation resistance VIO = 500 V R
IO
10
12
W
VIO = 500 V,
T
amb
= 100°C
R
IO
10
11
W
VIO = 500 V,
T
amb
= 150°C
(construction test only)
R
IO
10
9
W
0 25 50 75 125
0
50
100
150
200
300
P – Total Power Dissipation ( mW )
tot
Tsi – Safety Temperature ( °C )
150
94 9182
100
250
Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 1. Derating diagram
V
IOTM
V
Pd
V
IOWM
V
IORM
V
t
4
t
3
t
test
t
stres
t
2
t
1
t
0
13930
tTr= 60 s
t1, t2= 1 to 10 s
t3, t4= 1 s
t
test
= 10 s
t
stres
= 12 s
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
Page 5
TCET1600 up to TCET4600
Vishay Telefunken
Rev. A4, 11–Jan–99 257
Switching Characteristics
Parameter Test Conditions Symbol Typ. Unit
Delay time VS = 5 V, IC = 2 mA, RL = 100 W (see figure 3) t
d
3.0
m
s
Rise time
S C L
(g)
t
r
3.0
m
s
Turn-on time t
on
6.0
m
s
Storage time t
s
0.3
m
s
Fall time t
f
4.7
m
s
Turn-off time t
off
5.0
m
s
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kW (see figure 4) t
on
9.0
m
s
Turn-off time
S F L
(g)
t
off
10.0
m
s
Channel I
Channel II
100
W
50
W
+ 5 V
Oscilloscope
RL> 1 M
W
CL< 20 pF
IC= 2 mA ;
adjusted through
input amplitude
I
F
I
F
RG= 50W
tp
tp= 50 ms
T
= 0.01
0
13343
Figure 3. Test circuit, non-saturated operation
Channel I
Channel II
1 k
W
50
W
+ 5 V
Oscilloscope
RL> 1 M
W
CL< 20 pF
I
C
I
F
RG= 50W
tp
tp= 50 ms
T
= 0.01
0
13344
IF= 10 mA
Figure 4. Test circuit, saturated operation
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
96 11698
t
p
pulse duration
t
d
delay time
t
r
rise time
t
on
(= td + tr) turn-on time
t
s
storage time
t
f
fall time
t
off
(= ts + tf) turn-off time
Figure 5. Switching times
Page 6
TCET1600 up to TCET4600
Vishay Telefunken
Rev. A4, 11–Jan–99258
Typical Characteristics (T
amb
= 25_C, unless otherwise specified)
0
50
100
150
200
250
300
0 40 80 120
P – Total Power Dissipation ( mW )
T
amb
– Ambient Temperature (
°
96 11700
tot
Coupled device
Phototransistor
IR-diode
Figure 6. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )96 11862
F
I – Forward Current ( mA )
Figure 7. Forward Current vs. Forward Voltage
–25 0 25 50
0
0.5
1.0
1.5
2.0
CTR – Relative Current Transfer Ratio
rel
T
amb
– Ambient Temperature ( °C )95 11025
75
VCE=5V
I
F
=5mA
Figure 8. Relative Current Transfer Ratio vs.
Ambient Temperature
0255075
1
10
100
1000
10000
I – Collector Dark Current,
CEO
T
amb
– Ambient Temperature ( °C )
100
95 11026
with open Base ( nA )
VCE=20V
I
F
=0
Figure 9. Collector Dark Current vs.
Ambient Temperature
0.1 1 10
0.01
0.1
1
100
I – Collector Current ( mA )
C
IF – Forward Current ( mA )
100
95 11027
10
VCE=5V
Figure 10. Collector Current vs. Forward Current
0.1 1 10
0.1
1
10
100
V
CE
– Collector Emitter Voltage ( V )
100
95 10985
I – Collector Current ( mA )
C
IF=50mA
5mA
2mA
1mA
20mA
10mA
Figure 11. Collector Current vs. Collector Emitter Voltage
Page 7
TCET1600 up to TCET4600
Vishay Telefunken
Rev. A4, 11–Jan–99 259
110
0
0.2
0.4
0.6
0.8
1.0
V – Collector Emitter Saturation Voltage ( V
)
CEsat
IC – Collector Current ( mA )
100
CTR=50%
20%
10%
95 11028
Figure 12. Collector Emitter Saturation Voltage vs.
Collector Current
0.1 1 10
1
10
100
1000
CTR – Current Transfer Ratio ( % )
IF – Forward Current ( mA )
100
95 11029
VCE=5V
Figure 13. Current Transfer Ratio vs. Forward Current
0 5 10 15
0
10
20
30
40
50
I
F
– Forward Current ( mA )
20
95 11031
t / t – Turn on / Turn off Time ( s )
off
m
on
Saturated Operation
V
S
=5V
R
L
=1k
W
t
off
t
on
Figure 14. Turn on / off Time vs. Forward Current
02 4 6
0
2
4
6
8
10
I
C
– Collector Current ( mA )
10
95 11030
t / t – Turn on / Turn off Time ( s )
off
m
on
Non Saturated
Operation
V
S
=5V
R
L
=100
W
t
off
t
on
Figure 15. Turn on / off Time vs. Collector Current
ET1600
820UTK63
Type
Date
Code
Coupling
System
Indicator
Company
Logo
Production
Location
15082
Pin 1 Indication
(YM)
Figure 16. Marking example
Page 8
TCET1600 up to TCET4600
Vishay Telefunken
Rev. A4, 11–Jan–99260
Dimensions of TCET1600 in mm
14789
weight: ca. 0.25 g
creepage distance:
y
6 mm
air path:
y
6 mm
after mounting on PC board
Dimensions of TCET1600G in mm
14792
weight: ca. 0.25 g
creepage distance:
y
8 mm
air path:
y
8 mm
after mounting on PC board
Page 9
TCET1600 up to TCET4600
Vishay Telefunken
Rev. A4, 11–Jan–99 261
Dimensions of TCET2600 in mm
14784
weight: ca. 0.55 g
creepage distance:
y
6 mm
air path:
y
6 mm
after mounting on PC board
14784
Dimensions of TCET4600 in mm
weight: ca. 1.0 g
creepage distance:
y
6 mm
air path:
y
6 mm
after mounting on PC board
14783
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