Datasheet TCDT1124G, TCDT1124, TCDT1123G, TCDT1123, TCDT1122 Datasheet (Telefunken)

TCDT1120(G) Series

Vishay Telefunken

Optocoupler with Phototransistor Output

Description

The TCDT1 120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

Applications

Circuits for safe protective separation against electrical shock according to safety class II

(reinforced isolation):

D

For appl. class I – IV at mains voltage ≤ 300 V

D

For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor

system interface.

VDE Standards

These couplers perform safety functions according to the following equipment standards:

D

VDE 0884 Optocoupler for electrical safety requirements

D

IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 V

D

VDE 0804 Telecommunication apparatus and data processing

D

IEC 65 Safety for mains-operated electronic and related household apparatus

RMS

)

14827

nc

C

65

1

2

A (+) C (–) nc

E

4

94 9222

3

Order Instruction

Ordering Code CTR Ranking Remarks TCDT1120/ TCDT1120G TCDT1122/ TCDT1122G TCDT1123/ TCDT1123G TCDT1124/ TCDT1124G

1)

G = Leadform 10.16 mm; G is not market on the body

1)

63 to 125% 100 to 200% 160 to 320%

>40%

Rev. A3, 11–Jan–99224

Features

TCDT1120(G) Series

Vishay Telefunken

Approvals:

D

BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402

D

FIMKO (SETI): EN 60950, Certificate number 12399

D

Underwriters Laboratory (UL) 1577 recognized, file number E-76222

D

VDE 0884, Certificate number 94778

VDE 0884 related features:

D

Rated impulse voltage (transient overvoltage)

= 6 kV peak

V

IOTM

D

Isolation test voltage (partial discharge test voltage) V

D

Rated isolation voltage (RMS includes DC) V

IOWM

= 1.6 kV

pd

= 600 V

(848 V peak)

RMS

D

Rated recurring peak voltage (repetitive)

= 600 V

V

IORM

D

Creepage current resistance according to VDE 0303/IEC 1 12 Comparative Tracking Index: CTI = 275

D

Thickness through insulation ≥ 0.75 mm

General features:

D

Isolation materials according to UL94-VO

D

Pollution degree 2 (DIN/VDE 01 10 resp. IEC 664)

D

Climatic classification 55/100/21 (IEC 68 part 1)

D

Special construction: Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection

D

Low temperature coefficient of CTR

D

Base not connected

D

CTR offered in 4 groups

D

Coupling System A

Absolute Maximum Ratings

Input (Emitter)

Parameter Test Conditions Symbol Value Unit Reverse voltage V Forward current I Forward surge current tp ≤ 10 ms I Power dissipation T Junction temperature T

≤ 25°C P

amb

RMS

F

FSM

R

5 V

60 mA

3 A

V

j

100 mW 125

°

C

Output (Detector)

Parameter Test Conditions Symbol Value Unit Collector base voltage V Collector emitter voltage V Emitter collector voltage V Collector current I Collector peak current tp/T = 0.5, tp ≤ 10 ms I Power dissipation T

≤ 25°C P

amb

Junction temperature T

CBO CEO ECO

C

CM

V

j

90 V 90 V

7 V

50 mA 100 mA 150 mW 125

°

C

Coupler

Parameter Test Conditions Symbol V alue Unit Isolation test voltage (RMS) t = 1 min V Total power dissipation T

≤ 25°C P

amb

Ambient temperature range T Storage temperature range T Soldering temperature 2 mm from case, t ≤ 10 s T

IO tot

amb

stg

sd

Rev. A3, 11–Jan–99 225

3.75 kV 250 mW

–55 to +100 –55 to +125

260

°

C

°

C

°

C

TCDT1120(G) Series

C F

CE F

Vishay Telefunken

Electrical Characteristics (T

amb

= 25°C)

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage IF = 50 mA V Junction capacitance VR = 0, f = 1 MHz C

Output (Detector)

Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector base voltage IC = 100 mA V Collector emitter voltage IC = 1 mA V Emitter collector voltage IE = 100 mA V Collector emitter cut-off

VCE = 20 V, If = 0 I

current

Coupler

Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter

saturation voltage Cut-off frequency VCE = 5 V, IF = 10 mA,

Coupling capacitance f = 1 MHz C

IF = 10 mA, IC = 1 mA V

R

L

= 100

W

F

j

CBO CEO ECO

CEO

CEsat

f

c

k

1.25 1.6 V 50 pF

90 V 90 V

7 V

150 nA

0.3 V

110 kHz

0.3 pF

Current Transfer Ratio (CTR)

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit

IC/I

F

VCE = 5 V, IF = 1 mA TCDT1120(G) CTR 0.10

TCDT1122(G) CTR 0.15 TCDT1123(G) CTR 0.30 TCDT1124(G) CTR 0.60

VCE = 5 V, IF = 10 mA TCDT1120(G) CTR 0.40

TCDT1122(G) CTR 0.63 1.25 TCDT1123(G) CTR 1 2.00 TCDT1124(G) CTR 1.60 3.20

Rev. A3, 11–Jan–99226

TCDT1120(G) Series

gg

Tr test

Vishay Telefunken

Maximum Safety Ratings (according to VDE 0884) see figure 1

This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications.

Input (Emitter)

Parameters Test Conditions Symbol Value Unit

Forward current I

Output (Detector)

Parameters Test Conditions Symbol Value Unit

Power dissipation T

≤ 25°C P

amb

Coupler

Parameters Test Conditions Symbol Value Unit Rated impulse voltage V Safety temperature T

si

IOTM

si

130 mA

265 mW

6 kV

150

°

C

Insulation Rated Parameters (according to VDE 0884)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Partial discharge test voltage – Routine test

Partial discharge test voltage – tTr = 60 s, t Lot test (sample test)

Insulation resistance VIO = 500 V R

300

P

250

200

150

100

I

50

si (mA)

0

0 25 50 75 100 125 150 175 200

(mW)

si

T

amb

100%, t

(see figure 2)

VIO = 500 V,

≤ 100°C

T

amb

VIO = 500 V,

≤ 150°C

T

amb

(construction test only)

( °C )95 10934

= 1 s V

test

= 10 s, V

test

V

13930

IOTM

V

R

IOTM

V

Pd

IOWM

IORM

pd

pd IO IO

IO

1.6 kV

6 kV

1.3 kV 10 10

10

0

t

1

12 11

9

t1, t2= 1 to 10 s

t3, t4= 1 s t t

test stres

= 10 s = 12 s

tTr= 60 s

W W

W

t

test

4

3

t

stres

2

t

Figure 1. Derating diagram

Figure 2. Test pulse diagram for sample test according to

DIN VDE 0884

Rev. A3, 11–Jan–99 227

TCDT1120(G) Series

S C L

(g)

S C L

(g)

S C L

(g)

S C L

(g)

S C L

(g)

S C L

(g)

Vishay Telefunken

Switching Characteristics of TCDT1120(G) and TCDT1122(G)

Parameter Test Conditions Symbol Typ. Unit Delay time VS = 5 V, IC = 10 mA, RL = 100 W (see figure 3) t Rise time Fall time t Storage time t Turn-on time t Turn-off time t Turn-on time VS = 5 V, IC = 10 mA, RL = 1 kW (see figure 4) t Turn-off time

d

t

r

f

s on off on

t

off

Switching Characteristics of TCDT1123(G)

Parameter Test Conditions Symbol Typ. Unit Delay time VS = 5 V, IC = 10 mA, RL = 100 W (see figure 3) t Rise time Fall time t Storage time t Turn-on time t Turn-off time t Turn-on time VS = 5 V, IC = 10 mA, RL = 1 kW (see figure 4) t Turn-off time

d

t

r

f

s on off on

t

off

2.5

3.0

3.7

0.3

5.5

4.0

16.5

22.5

2.8

4.2

4.7

0.3

7.0

5.0

21.0

37.5

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

Switching Characteristics of TCDT1124(G)

Parameter Test Conditions Symbol Typ. Unit Delay time VS = 5 V, IC = 10 mA, RL = 100 W (see figure 3) t Rise time Fall time t Storage time t Turn-on time t Turn-off time t Turn-on time VS = 5 V, IC = 10 mA, RL = 1 kW (see figure 4) t Turn-off time

RG = 50

t

p

+

0.01

T

t

= 50 ms

p

95 10843

I

F

W

50

W

IF = 10 mA

1 k

W

0

R

= 50

G

tp

= 0.01

T

tp= 50 ms

95 10848

100

W

+ 5 V

IC= 10 mA ;

Channel I

Channel II

Adjusted through input amplitude

Oscilloscope

w

1 M

R

CLv

W

L

20 pF

0

I

F

W

50

W

d

t

r

f

s on off on

t

off

+ 5 V

I

C

Channel I

Channel II

2.0

4.0

4.7

0.3

6.0

5.0

20.0

50.0

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

Oscilloscope

R

≥ 1 M

W

L

C

≤ 20 pF

L

Figure 3. Test circuit, non-saturated operation

Figure 4. Test circuit, saturated operation

Rev. A3, 11–Jan–99228

TCDT1120(G) Series

Vishay Telefunken

96 11698

I

F

0

I

C

100%

90%

10%

0

t

r

t

d

t

on

t

p

tion t

d

t

r

t

(= td + tr) turn-on time

on

pulse duradelay time

rise time

Figure 5. Switching times

t

p

t

s

f

t

off

t

s

t

f

t

(= ts + tf) turn-off time

off

t

storage time fall time

Typical Characteristics (T

300

Coupled device

250

200

Phototransistor

150

IR-diode

100

50

tot

P – Total Power Dissipation ( mW )

0

0 40 80 120

T

96 11700

Figure 6. Total Power Dissipation vs.

– Ambient Temperature (

amb

°

Ambient Temperature

= 25_C, unless otherwise specified)

amb

1000.0

100.0

10.0

1.0

F

I – Forward Current ( mA )

0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )96 11862

Figure 7. Forward Current vs. Forward Voltage

Rev. A3, 11–Jan–99 229

TCDT1120(G) Series

)

Vishay Telefunken

1.5

VCE=5V

1.4

I

=10mA

F

1.3

1.2

1.1

1.0

0.9

0.8

0.7

rel

0.6

CTR – Relative Current Transfer Ratio

0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80

T

96 11918

– Ambient Temperature ( °C

amb

Figure 8. Relative Current Transfer Ratio vs.

Ambient Temperature

10000

VCE=30V I

=0

F

1000

100

with open Base ( nA )

10

CEO

I – Collector Dark Current,

1

0255075

T

95 11038

– Ambient Temperature ( °C )

amb

Figure 9. Collector Dark Current vs.

Ambient Temperature

100

IF=50mA

20mA

10

10mA

5mA

1

C

I – Collector Current ( mA )

CNY75A

2mA

1mA

0.1 100

95 11041

0.1 1 10 V

– Collector Emitter Voltage ( V )

CE

Figure 11. Collector Current vs. Collector Emitter Voltage

1.0

CTR=50%

0.8

CNY75A

0.6

0.4

20%

0.2

10%

0

CEsat

V – Collector Emitter Saturation Voltage ( V

95 11034

110

IC – Collector Current ( mA )

100

Figure 12. Collector Emitter Saturation Voltage vs.

Collector Current

100

VCE=5V

1000

TCDT1122(G) V

=5V

CE

10

100

1

10

0.1

C

I – Collector Current ( mA )

0.01

0.1 1 10

95 11040

IF – Forward Current ( mA )

Figure 10. Collector Current vs. Forward Current

100

CTR – Current Transfer Ratio ( % )

1

100

14796

0.1 1 10

IF – Forward Current ( mA )

Figure 13. Current Transfer Ratio vs. Forward Current

Rev. A3, 11–Jan–99230

TCDT1120(G) Series

Vishay Telefunken

1000

TCDT1123(G) V

=5V

CE

100

10

CTR – Current Transfer Ratio ( % )

1

100

14797

0.1 1 10 IF – Forward Current ( mA )

Figure 14. Current Transfer Ratio vs. Forward Current

1000

TCDT1124(G) V

=5V

CE

100

50

m

40

TCDT1123(G)

Saturated Operation

V

=5V

S

R

=1k

W

L

30

t

off

20

10

off

on

t / t – Turn on / Turn off Time ( s )

147800

0

0 5 10 15

– Forward Current ( mA )

I

F

t

on

20

Figure 17. Turn on / off Time vs. Forward Current

50

m

TCDT1124(G)

Saturated Operation

40

V

=5V

S

R

=1k

L

30

t

off

W

10

CTR – Current Transfer Ratio ( % )

1

100

14798

0.1 1 10 IF – Forward Current ( mA )

Figure 15. Current Transfer Ratio vs. Forward Current

50

m

off

on

t / t – Turn on / Turn off Time ( s )

14799

TCDT1122(G)

Saturated Operation

40

V

=5V

S

R

=1k

W

L

30

20

10

0

0 5 10 15

– Forward Current ( mA )

I

F

t

off

t

on

20

10

off

on

t / t – Turn on / Turn off Time ( s )

147801

0

0 5 10 15

– Forward Current ( mA )

I

F

t

on

20

Figure 18. Turn on / off Time vs. Forward Current

20

m

off

on

t / t – Turn on / Turn off Time ( s )

147802

15

t

on

10

t

off

5

0

02 46

– Collector Current ( mA )

I

C

TCDT1122(G)

Non Saturated

Operation V

=5V

S

R

=100

W

L

10

8

Figure 16. Turn on / off Time vs. Forward Current

Figure 19. Turn on / off Time vs. Collector Current

Rev. A3, 11–Jan–99 231

TCDT1120(G) Series

Vishay Telefunken

20

m

off

on

t / t – Turn on / Turn off Time ( s )

147803

15

10

5

0

02 46

– Collector Current ( mA )

I

C

TCDT1123(G)

Non Saturated

Operation V

=5V

S

R

=100

W

L

8

t

on

t

off

10

Figure 20. Turn on / off Time vs. Collector Current

Type

XXXXXX

20

m

off

on

t / t – Turn on / Turn off Time ( s )

147804

15

t

on

10

t

off

5

0

02 46

– Collector Current ( mA )

I

C

TCDT1124(G)

Non Saturated

Operation V

=5V

S

R

=100

W

L

8

10

Figure 21. Turn on / off Time vs. Collector Current

Date

Code

(YM)

918 A TK 63

V

DE

Coupling

System

Indicator

Figure 22. Marking example

0884

Company

Logo

Production

Location

Safety

Logo

15090

Rev. A3, 11–Jan–99232

Dimensions of TCDT112.G in mm

weight: ca. 0.50 g

creepage distance:

air path:y 8 mm

TCDT1120(G) Series

Vishay Telefunken

y

8 mm

Dimensions of TCDT112. in mm

after mounting on PC board

14771

weight: 0.50 g

creepage distance:

air path:y 6 mm after mounting on PC board

y

6 mm

14770

Rev. A3, 11–Jan–99 233