VISHAY TCDT1110, TCDT1110G Technical data

TCDT1110/ TCDT1110G

Optocoupler, Phototransistor Output

Features

• Extra low coupling capacity - typical 0.2 pF

• High Common Mode Rejection

• Low temperature coefficient of CTR

• Base not connected

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

nc

C

65

1

2

A (+) C (–) nc

Vishay Semiconductors

E

4

3

17201_1

DE

V

e3

Pb

Pb-free

Agency Approvals

• UL1577, File No. E76222 System Code A, Double
Protection

• BSI IEC60950 IEC60065

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending

• FIMKO

Applications

Circuits for safe protective separation against electri­cal shock according to safety class II (reinforced iso­lation):

• For appl. class I - IV at mains voltage ≤ 300 V

• For appl. class I - III at mains voltage ≤ 600 V accord-

ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747­5-5 pending, table 2, suitable for:

Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface

Description

The TCDT1110/ TCDT1110G consists of a pho­totransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-PIN plastic dual inline
package.

The elements provide a fixed distance between input
and output for highest safety requirements.

VDE Standards

These couplers perform safety functions according to the following

equipment standards:

DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending

Optocoupler for electrical safety requirements

IEC 60950/ EN 60950

Office machines (applied for reinforced isolation for mains voltage

≤

400 VRMS)

VDE 0804

Telecommunication apparatus and data processing

IEC 60065

Safety for mains-operated electronic and related household appa-

ratus

Order Information

Part Remarks

TCDT1110 CTR > 100 %, DIP-6

TCDT1110G CTR > 100 %, DIP-6

G = Leadform 10.16 mm; G is not marked on the body

Document Number 83531

Rev. 1.7, 26-Oct-04

www.vishay.com

1

TCDT1110/ TCDT1110G

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Forward surge current t

/T ≤ 10 µsI

p

Power dissipation P

Junction temperature T

Output

Parameter Test condition Symbol Val ue Unit

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

/T = 0.5, tp ≤ 10 ms I

p

R

F

FSM

diss

j

CEO

ECO

C

CM

diss

j

6V

60 mA

3A

100 mW

125 °C

70 V

7V

50 mA

100 mA

150 mW

125 °C

Coupler

Parameter Test condition Symbol Val ue Unit

Isolation test voltage (RMS) t = 1 min V

Total power dissipation P

Ambient temperature range T

Storage temperature range T

Soldering temperature 2 mm from case, t ≤ 10 s T

ISO

tot

amb

stg

sld

3750 V

RMS

250 mw

- 55 to + 100 °C

- 55 to + 125 °C

260 °C

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Junction capacitance V

= 50 mA V

F

= 0, f = 1 MHz C

R

F

j

1.2 1.5 V

50 pF

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage I

Emitter collector voltage I

Collector-emitter cut-off current V

= 1 mA V

C

= 100 µAV

E

= 30 V, IF = 0 I

CE

CEO

ECO

CEO

70 V

7V

150 nA

www.vishay.com

2

Document Number 83531

Rev. 1.7, 26-Oct-04

TCDT1110/ TCDT1110G

Coupler

Parameter Test condition Symbol Min Ty p . Max Unit

Collector emitter saturation
voltage

Cut-off frequency V

Coupling capacitance f = 1 MHz C

Current Transfer Ratio

Parameter Test condition Symbol Min Ty p . Max Unit

I

C/IF

Maximum Safety Ratings

(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Input

Parameter Test condition Symbol Min Ty p . Max Unit

Forward current I

= 10 mA, IC = 0.5 mA V

I

F

= 5 V, IF = 10 mA, RL = 1 Ω f

CE

CEsat

c

k

VCE = 20 V, IF = 10 mA CTR 100 %

F

Vishay Semiconductors

0.3 V

110 kHz

0.3 pF

130 mA

Output

Parameter Test condition Symbol Min Ty p . Max Unit

Power dissipation P

Coupler

Parameter Test condition Symbol Min Ty p . Max Unit

Rated impulse voltage V

Safety temperature T

Insulation Rated Parameters

Parameter Test condition Symbol Min Ty p . Max Unit

Partial discharge test voltage ­Routine test

Partial discharge test voltage ­Lot test (sample test)

Insulation resistance V

100 %, t

= 60 s, t

t

Tr

(see figure 2)

IO

V

IO

V

IO

(construction test only)

= 1 s V

test

= 10 s,

test

= 500 V R

= 500 V, T

= 500 V, T

= 100 °C R

amb

= 200 °C

amb

V

diss

IOTM

si

pd

IOTM

V

pd

IO

IO

R

IO

265 mW

6kV

150 °C

1.6 kV

6kV

1.3 kV

10

10

10

12

11

9

Ω

Ω

Ω

Document Number 83531

Rev. 1.7, 26-Oct-04

www.vishay.com

3