TCDT1110/ TCDT1110G
Optocoupler, Phototransistor Output
Features
• Extra low coupling capacity - typical 0.2 pF
• High Common Mode Rejection
• Low temperature coefficient of CTR
• Base not connected
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
nc
C
65
1
2
A (+) C (–) nc
Vishay Semiconductors
E
4
3
17201_1
DE
V
e3
Pb
Pb-free
Agency Approvals
• UL1577, File No. E76222 System Code A, Double
Protection
• BSI IEC60950 IEC60065
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• FIMKO
Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
• For appl. class I - IV at mains voltage ≤ 300 V
• For appl. class I - III at mains voltage ≤ 600 V accord-
ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2, suitable for:
Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface
Description
The TCDT1110/ TCDT1110G consists of a phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-PIN plastic dual inline
package.
The elements provide a fixed distance between input
and output for highest safety requirements.
VDE Standards
These couplers perform safety functions according to the following
equipment standards:
DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending
Optocoupler for electrical safety requirements
IEC 60950/ EN 60950
Office machines (applied for reinforced isolation for mains voltage
≤
400 VRMS)
VDE 0804
Telecommunication apparatus and data processing
IEC 60065
Safety for mains-operated electronic and related household appa-
ratus
Order Information
Part Remarks
TCDT1110 CTR > 100 %, DIP-6
TCDT1110G CTR > 100 %, DIP-6
G = Leadform 10.16 mm; G is not marked on the body
Document Number 83531
Rev. 1.7, 26-Oct-04
www.vishay.com
1
TCDT1110/ TCDT1110G
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
Forward current I
Forward surge current t
/T ≤ 10 µsI
p
Power dissipation P
Junction temperature T
Output
Parameter Test condition Symbol Val ue Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current t
Power dissipation P
Junction temperature T
/T = 0.5, tp ≤ 10 ms I
p
R
F
FSM
diss
j
CEO
ECO
C
CM
diss
j
6V
60 mA
3A
100 mW
125 °C
70 V
7V
50 mA
100 mA
150 mW
125 °C
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage (RMS) t = 1 min V
Total power dissipation P
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
ISO
tot
amb
stg
sld
3750 V
RMS
250 mw
- 55 to + 100 °C
- 55 to + 125 °C
260 °C
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Junction capacitance V
= 50 mA V
F
= 0, f = 1 MHz C
R
F
j
1.2 1.5 V
50 pF
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector emitter voltage I
Emitter collector voltage I
Collector-emitter cut-off current V
= 1 mA V
C
= 100 µAV
E
= 30 V, IF = 0 I
CE
CEO
ECO
CEO
70 V
7V
150 nA
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2
Document Number 83531
Rev. 1.7, 26-Oct-04
TCDT1110/ TCDT1110G
Coupler
Parameter Test condition Symbol Min Ty p . Max Unit
Collector emitter saturation
voltage
Cut-off frequency V
Coupling capacitance f = 1 MHz C
Current Transfer Ratio
Parameter Test condition Symbol Min Ty p . Max Unit
I
C/IF
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input
Parameter Test condition Symbol Min Ty p . Max Unit
Forward current I
= 10 mA, IC = 0.5 mA V
I
F
= 5 V, IF = 10 mA, RL = 1 Ω f
CE
CEsat
c
k
VCE = 20 V, IF = 10 mA CTR 100 %
F
Vishay Semiconductors
0.3 V
110 kHz
0.3 pF
130 mA
Output
Parameter Test condition Symbol Min Ty p . Max Unit
Power dissipation P
Coupler
Parameter Test condition Symbol Min Ty p . Max Unit
Rated impulse voltage V
Safety temperature T
Insulation Rated Parameters
Parameter Test condition Symbol Min Ty p . Max Unit
Partial discharge test voltage Routine test
Partial discharge test voltage Lot test (sample test)
Insulation resistance V
100 %, t
= 60 s, t
t
Tr
(see figure 2)
IO
V
IO
V
IO
(construction test only)
= 1 s V
test
= 10 s,
test
= 500 V R
= 500 V, T
= 500 V, T
= 100 °C R
amb
= 200 °C
amb
V
diss
IOTM
si
pd
IOTM
V
pd
IO
IO
R
IO
265 mW
6kV
150 °C
1.6 kV
6kV
1.3 kV
10
10
10
12
11
9
Ω
Ω
Ω
Document Number 83531
Rev. 1.7, 26-Oct-04
www.vishay.com
3
TCDT1110/ TCDT1110G
Vishay Semiconductors
300
P
I
si (mA)
si (mW)
T
(°C)
amb
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
95 10934
V
V
V
13930
IOTM
V
IOWM
IORM
t1, t2 = 1 to 10 s
t
, t4 = 1 s
3
= 10 s
t
test
= 12 s
t
stres
Pd
0
t
1
tTr = 60 s
t
2
t
t3t
test
t
stres
4
t
Figure 1. Derating diagram
Switching Characteristics
Parameter Test condition Symbol Min Ty p. Max Unit
Turn-off time V
Turn-on time V
Turn-off time V
Turn-on time V
I
I
F
0
RG = 50 W
t
p
= 0.01
T
tp = 50 Ps
F
50 W 100 W
= 10 V, IC = 2 mA,
S
= 100 Ω (see figure 3)
R
L
= 10 V, IC = 2 mA,
S
= 100 Ω (see figure 3)
R
L
= 1 0 V, IF = 10 mA, RL = 1 kΩ
S
(see figure 4)
= 1 0 V, IF = 10 mA, RL = 1 kΩ
S
(see figure 4)
+ 10 V
= 2 mA; adjusted through
I
C
Channel I
Channel II
input amplitude
Oscilloscope
R
t 1 MW
L
C
d 20 pF
L
Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
t
off
t
on
t
off
t
on
I
F
0
RG = 50 W
t
p
= 0.01
T
tp = 50 Ps
15.0 µs
15.0 µs
18.0 µs
9.0 µs
= 10 mA
I
F
50 W 1 kW
+ 10 V
I
C
Channel I
Channel II
Oscilloscope
R
t 1 MW
L
d 20 pF
C
L
95 10889
Figure 3. Test circuit, non-saturated operation
www.vishay.com
4
95 10898
Figure 4. Test circuit, saturated operation
Document Number 83531
Rev. 1.7, 26-Oct-04
TCDT1110/ TCDT1110G
Vishay Semiconductors
Figure 5. Switching Times
I
F
0
I
C
t
p
100%
90%
10%
0
t
p
t
d
t
r
t
(= td+tr) turn-on time
on
t
r
t
d
t
on
pulse duration
delay time
rise time
t
s
t
off
t
s
t
f
t
(= ts+tf) turn-off time
off
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
96 11698
t
t
f
t
storage time
fall time
300
Coupled device
250
200
Phototransistor
150
IR-diode
100
50
tot
P –Total Power Dissipation ( mW )
0
0 40 80 120
T
96 11700
– Ambient Temperature( °C )
amb
Figure 6. Total Power Dissipation vs. Ambient Temperature
1000
100
10
1
F
I - Forward Current ( mA )
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
VF- Forward Voltage(V)
1.5
VCE=10V
1.4
=10mA
I
F
1.3
1.2
1.1
1.0
0.9
0.8
0.7
rel
0.6
0.5
CTR – Relative Current Transfer Ratio
–30–20–100 1020304050607080
T
96 11874
– Ambient Temperature (°C )
amb
Figure 8. Relative Current Transfer Ratio vs. Ambient
Temperature
10000
VCE=30V
=0
I
F
100
10
1
0255075
T
– Ambient Temperature (°C )
amb
100
with open Base ( nA)
CEO
I – Collector Dark Current,
95 11072
1000
Figure 7. Forward Current vs. Forward Voltage
Document Number 83531
Rev. 1.7, 26-Oct-04
Figure 9. Collector Dark Current vs. Ambient Temperature
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5
TCDT1110/ TCDT1110G
Vishay Semiconductors
100.00
VCE=10V
1000
VCE=20V
10.00
1.00
0.10
I – Collector Current ( mA )
C
0.01
0.1 1.0 10.0 100.0
96 11904
IF– Forward Current ( mA )
Figure 10. Collector Current vs. Forward Current
100
10
1
C
I – Collector Current ( mA)
0.1
0.1 1 10
95 10985
V
CE
IF=50mA
– Collector Emitter Voltage(V)
20mA
10mA
5mA
2mA
1mA
100
100
10
CTR – Current Transfer Ratio ( % )
1
0.1 1 10
95 10976
IF– Forward Current ( mA )
100
Figure 13. Current Transfer Ratio vs. Forward Current
50
µ
off
on
t / t –Turnon / Turn off Time ( s )
95 10974
Saturated Operation
=5V
V
40
S
R
=1k Ω
L
30
20
10
0
0 5 10 15
I
– Forward Current ( mA )
F
t
off
t
on
20
Figure 11. Collector Current vs. Collector Emitter Voltage
1.0
0.8
20%
0.6
CTR=50%
0.4
0.2
10%
0
CEsat
110
V – Collector Emitter Saturation Voltage (V )
95 10972
IC– Collector Current ( mA )
100
Figure 12. Collector Emitter Saturation Voltage vs. Collector
Current
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6
Figure 14. Turn on / off Time vs. Forward Current
20
µ
15
t
off
10
t
on
5
off
on
t / t –Turnon / Turn off Time ( s )
0
02 46
I
95 10975
– Collector Current ( mA )
C
Non Saturated
Operation
=10V
V
S
R
=100 Ω
L
8
Figure 15. Turn on / off Time vs. Collector Current
Document Number 83531
10
Rev. 1.7, 26-Oct-04
Customer Code/
Identification/
Option
TCDT1110/ TCDT1110G
Vishay Semiconductors
Figure 16. Marking example
Product Code
V
D E
UL Logo
V XXXY 68
Vishay Logo
17936
Package Dimensions in mm
Date Code (year, week)
VDE Logo
Plant Code
Package Code
Document Number 83531
Rev. 1.7, 26-Oct-04
14770
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7
TCDT1110/ TCDT1110G
Vishay Semiconductors
Package Dimensions in mm
14771
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8
Document Number 83531
Rev. 1.7, 26-Oct-04
TCDT1110/ TCDT1110G
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83531
Rev. 1.7, 26-Oct-04
www.vishay.com
9
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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