VISHAY TCDT1100, TCDT1100G Technical data

TCDT1100/ TCDT1100G

Optocoupler, Phototransistor Output

Features

• Isolation Test Voltage 3750 V

• Extra low coupling capacity - typical 0.2 pF

• High Common Mode Rejection

• No base terminal connection for improved noise
immunity

• CTR offered in 4 groups

• Thickness through insulation > 0.75 mm

• Creepage current resistance according to VDE
0303/IEC 60112 Comparative Tracking Index:
CTI = 275

RMS

nc

C

65

1

2

A (+) C (–) nc

Vishay Semiconductors

E

4

3

17201_1

DE

V

e3

Pb

Pb-free

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E76222 System Code A, Double
Protection

• BSI IEC60950 IEC60065

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending

• FIMKO

Applications

Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface
Circuits for safe protective separation against electri-

cal shock according to safety class II (reinforced iso­lation):

• For appl. class I - IV at mains voltage ≤ 300 V

• For appl. class I - III at mains voltage ≤ 600 V accord-

ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747­5-5 pending, table 2.

Description

The TCDT1100/ TCDT1100G series consists of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-pin plastic dual inline
package. The base of the phototransistor is not con­nected providing noise immunity.

The elements are mounted on one leadframe which
provides a fixed distance between input and output
for highest safety requirements.

VDE Standards

These couplers perform safety functions according to the following

equipment standards:

DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending

Optocoupler for electrical safety requirements

IEC 60950/EN 60950

Office machines (applied for reinforced isolation for mains voltage

≤

400 VRMS)

VDE 0804

Telecommunication apparatus and data processing

IEC 60065

Safety for mains-operated electronic and related household appa-

ratus

Order Information

Part Remarks

TCDT1100 CTR > 40 %, DIP-6

TCDT1101 CTR 40 - 80 %, DIP-6

TCDT1102 CTR 63 - 125 %, DIP-6

TCDT1103 CTR 100 - 200 %, DIP-6

TCDT1100G CTR > 40 %, DIP-6

TCDT1101G CTR 40 - 80 %, DIP-6

TCDT1102G CTR 63 - 125 %, DIP-6

TCDT1103G CTR 100 - 200 %, DIP-6

G = Leadform 10.16 mm; G is not marked on the body

Document Number 83535

Rev. 1.6, 26-Oct-04

www.vishay.com

1

TCDT1100/ TCDT1100G

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Forward surge current t

≤ 10 µsI

p

Power dissipation P

Junction temperature T

Output

Parameter Test condition Symbol Val ue Unit

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

/T = 0.5, tp ≤ 10 ms I

p

R

F

FSM

diss

j

CEO

ECO

C

CM

diss

j

5V

60 mA

3A

100 mW

125 °C

32 V

7V

50 mA

100 mA

150 mW

125 °C

Coupler

Parameter Test condition Symbol Val ue Unit

Isolation test voltage (RMS) V

Total power dissipation P

Ambient temperature range T

Storage temperature range T

Soldering temperature 2 mm from case t ≤ 10 s T

ISO

tot

amb

stg

sld

3750 V

RMS

250 mW

- 55 to + 100 °C

- 55 to + 125 °C

260 °C

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Junction capacitance V

= 50 mA V

F

= 0, f = 1 MHz C

R

F

j

1.25 1.6 V

50 pF

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage I

Emitter collector voltage I

Collector-emitter cut-off current V

= 1 mA V

C

= 100 µAV

E

= 20 V, If = 0, E = 0 I

CE

CEO

ECO

CEO

32 V

7V

200 nA

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2

Document Number 83535

Rev. 1.6, 26-Oct-04

Coupler

Parameter Test condition Symbol Min Ty p . Max Unit

Collector emitter saturation
voltage

Cut-off frequency V

Coupling capacitance f = 1 MHz C

= 10 mA, IC = 1 mA V

I

F

= 5 V, IF = 10 mA,

CE

= 100 Ω

R

L

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

I

C/IF

VCE = 5 V, IF = 10 mA TCDT1100

TCDT1100/ TCDT1100G

Vishay Semiconductors

CEsat

f

c

k

TCDT1100G

TCDT1101

TCDT1101G

TCDT1102

TCDT1102G

TCDT1103

TCDT1103G

110 kHz

0.3 pF

CTR 40 %

CTR 40 80 %

CTR 63 125 %

CTR 100 200 %

0.3 V

Maximum Safety Ratings

(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Input

Parameter Test condition Symbol Min Ty p . Max Unit

Forward current I

F

Output

Parameter Test condition Symbol Min Ty p . Max Unit

Power dissipation P

diss

Coupler

Parameter Test condition Symbol Min Ty p . Max Unit

Rated impulse voltage V

Safety temperature T

IOTM

si

Insulation Rated Parameters

Parameter Test condition Symbol Min Ty p . Max Unit

Partial discharge test voltage ­Routine test

Partial discharge test voltage ­Lot test (sample test)

100 %, t

test

= 60 s, t

t

Tr

(see figure 2)

test

= 1 s V

= 10 s,

V

pd

IOTM

V

pd

1.6 kV

6kV

1.3 kV

130 mA

265 mW

6kV

150 °C

Document Number 83535

Rev. 1.6, 26-Oct-04

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3

TCDT1100/ TCDT1100G

Vishay Semiconductors

Parameter Test condition Symbol Min Ty p. Max Unit

Insulation resistance VIO = 500 V R

V

300

250

200

150

100

= 500 V, T

IO

V

= 500 V, T

IO

(construction test only)

Phototransistor
Psi ( mW )

= 100 °C R

amb

= 150 °C

amb

R

V

V

V

IO

IO

IO

IOTM

V

IOWM

IORM

12

10

11

10

9

10

t1, t2 = 1 to 10 s
t

, t4 = 1 s

3

= 10 s

t

test

t

= 12 s

stres

Pd

Ω

Ω

Ω

50

tot

P – Total Power Dissipation ( mW )

0

IR-Diode
Isi ( mA )

0 25 50 75 125

94 9182

Tsi – Safety Temperature ( °C )

Figure 1. Derating diagram

100

150

13930

0

t

1

tTr = 60 s

t

2

t

t3t

test

t

stres

4

t

Figure 2. Test pulse diagram for sample test according to DIN EN

60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747

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4

Document Number 83535

Rev. 1.6, 26-Oct-04

Switching Characteristics

Parameter Test condition Symbol Min Ty p . Max Unit

Delay time V

Rise time V

Fall time V

Storage time V

Turn-on time V

Turn-off time V

Turn-on time V

Turn-off time V

= 5 V, IC = 5 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 5 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 5 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 5 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 5 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 5 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 4)

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 4)

TCDT1100/ TCDT1100G

Vishay Semiconductors

t

d

t

r

t

f

t

s

t

on

t

off

t

on

t

off

4.0 µs

7.0 µs

6.7 µs

0.3 µs

11.0 µs

7.0 µs

25.0 µs

42.5 µs

+ 5 V

= 5 mA;

I

C

Channel I

Channel II

95 10900

I

0

RG = 50 W
t

p

= 0.01

T

tp = 50 Ps

I

F

F

50 W 100 W

Figure 3. Test circuit, non-saturated operation

1k

Ω

+5V

I

C

Channel I

Channel II

0

RG=50
t

p

= 0.01

T

tp=50 s

I

F

Ω

µ

IF=10mA

Ω

50

adjusted through
input amplitude

Oscilloscope
R

t 1 MW

L

d 20 pF

C

L

Oscilloscope

Ω

M1

R

≥

L

20 pF

C

≤

L

I

F

0

I

C

100%

90%

10%

0

t

d

t

t

p

t

d

t

r

t

(= td+tr) turn-on time

on

on

pulse duration
delay time
rise time

t

p

t

r

t

t

s

t

off

t

s

t

f

t

(= ts+tf) turn-off time

off

Figure 5. Switching Times

f

96 11698

t

t

storage time
fall time

95 10843

Figure 4. Test circuit, saturated operation

Document Number 83535

Rev. 1.6, 26-Oct-04

www.vishay.com

5

TCDT1100/ TCDT1100G

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

300

Coupled device

250

200

Phototransistor

150

IR-diode

100

50

tot

P –Total Power Dissipation ( mW )

0

0 40 80 120

T

96 11700

– Ambient Temperature(°C )

amb

Figure 6. Total Power Dissipation vs. Ambient Temperature

1000

100

10

1

F

I - Forward Current ( mA )

0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

96 11862

VF- Forward Voltage(V)

10000

VCE=20V

I

=0

1000

F

100

with open Base ( nA )

10

CEO

I - Collector Dark Current,

1

0255075

T

95 11026

- Ambient Temperature (°C)

amb

100

Figure 9. Collector Dark Current vs. Ambient Temperature

100

10

1

C

I - Collector Current ( mA )

0.1

0.1 1 10

95 11054

V

CE

IF= 50mA

- Collector Emitter Voltage(V)

20 mA

10 mA

5mA

2mA

1mA

100

Figure 7. Forward Current vs. Forward Voltage

1.5

VCE=5V

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

rel

0.5

CTR - Relative Current Transfer Ratio

- 30 - 2 0 - 1 0 0 1 0 20 30 40 50 60 70 80

96 11920

=10 mA

I

F

T

- Ambient Temperature ( ° C)

amb

Figure 8. Relative Current Transfer Ratio vs. Ambient

Temperature

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6

Figure 10. Collector Current vs. Collector Emitter Voltage

1.0

0.8

0.6

0.4
CTR = 50%

0.2

20%

CEsat

V - Collector Emitter Saturation Voltage (V)

95 11055

0

110

IC- Collector Current ( mA )

10%

100

Figure 11. Collector Emitter Saturation Voltage vs. Collector

Current

Document Number 83535

Rev. 1.6, 26-Oct-04

1000

TCDT1100/ TCDT1100G

Vishay Semiconductors

VCE=5V

100

10

CTR - Current Transfer Ratio ( % )

1

0.1 1 10

95 11057

IF- Forward Current ( mA )

100

Figure 12. Current Transfer Ratio vs. Forward Current

50

t

off

t

on

20

offon

t / t - Turn on / Turn off Time ( µ s)

95 11017

40

30

20

Saturated Operation
V

=5V

R

S

L

=1kΩ

10

0

0 5 10 15

I

- Forward Current ( mA )

F

Customer Code/
Identification/
Option

UL Logo

Vishay Logo

17936

V

D E

V XXXY 68

Date Code (year, week)

Figure 15. Marking example

Product Code

VDE Logo

Plant Code

Package Code

Figure 13. Turn on / off Time vs. Forward Current

20

Non Saturated
Operation
V

=5V

S

R

= 100

L

15

10

t

on

t

off

5

offon

t / t - Turn on / Turn off Time ( µ s)

0

02 46

I

95 11016

- Collector Current ( mA )

C

Figure 14. Turn on / off Time vs. Collector Current

Document Number 83535

Rev. 1.6, 26-Oct-04

Ω

10

8

www.vishay.com

7

TCDT1100/ TCDT1100G

Vishay Semiconductors

Package Dimensions in mm

Package Dimensions in mm

14770

www.vishay.com

8

14771

Document Number 83535

Rev. 1.6, 26-Oct-04

TCDT1100/ TCDT1100G

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

Document Number 83535

Rev. 1.6, 26-Oct-04

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9

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.