VISHAY TCDT1100, TCDT1100G Technical data
TCDT1100/ TCDT1100G
Optocoupler, Phototransistor Output
Features
• Isolation Test Voltage 3750 V
• Extra low coupling capacity - typical 0.2 pF
• High Common Mode Rejection
• No base terminal connection for improved noise
immunity
• CTR offered in 4 groups
• Thickness through insulation > 0.75 mm
• Creepage current resistance according to VDE
0303/IEC 60112 Comparative Tracking Index:
CTI = 275
RMS
nc
C
65
1
2
A (+) C (–) nc
Vishay Semiconductors
E
4
3
17201_1
DE
V
e3
Pb
Pb-free
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E76222 System Code A, Double
Protection
• BSI IEC60950 IEC60065
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• FIMKO
Applications
Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface
Circuits for safe protective separation against electri-
cal shock according to safety class II (reinforced isolation):
• For appl. class I - IV at mains voltage ≤ 300 V
• For appl. class I - III at mains voltage ≤ 600 V accord-
ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2.
Description
The TCDT1100/ TCDT1100G series consists of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-pin plastic dual inline
package. The base of the phototransistor is not connected providing noise immunity.
The elements are mounted on one leadframe which
provides a fixed distance between input and output
for highest safety requirements.
VDE Standards
These couplers perform safety functions according to the following
equipment standards:
DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending
Optocoupler for electrical safety requirements
IEC 60950/EN 60950
Office machines (applied for reinforced isolation for mains voltage
≤
400 VRMS)
VDE 0804
Telecommunication apparatus and data processing
IEC 60065
Safety for mains-operated electronic and related household appa-
ratus
Order Information
Part Remarks
TCDT1100 CTR > 40 %, DIP-6
TCDT1101 CTR 40 - 80 %, DIP-6
TCDT1102 CTR 63 - 125 %, DIP-6
TCDT1103 CTR 100 - 200 %, DIP-6
TCDT1100G CTR > 40 %, DIP-6
TCDT1101G CTR 40 - 80 %, DIP-6
TCDT1102G CTR 63 - 125 %, DIP-6
TCDT1103G CTR 100 - 200 %, DIP-6
G = Leadform 10.16 mm; G is not marked on the body
Document Number 83535
Rev. 1.6, 26-Oct-04
www.vishay.com
1
TCDT1100/ TCDT1100G
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
Forward current I
Forward surge current t
≤ 10 µsI
p
Power dissipation P
Junction temperature T
Output
Parameter Test condition Symbol Val ue Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current t
Power dissipation P
Junction temperature T
/T = 0.5, tp ≤ 10 ms I
p
R
F
FSM
diss
j
CEO
ECO
C
CM
diss
j
5V
60 mA
3A
100 mW
125 °C
32 V
7V
50 mA
100 mA
150 mW
125 °C
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage (RMS) V
Total power dissipation P
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case t ≤ 10 s T
ISO
tot
amb
stg
sld
3750 V
RMS
250 mW
- 55 to + 100 °C
- 55 to + 125 °C
260 °C
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Junction capacitance V
= 50 mA V
F
= 0, f = 1 MHz C
R
F
j
1.25 1.6 V
50 pF
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector emitter voltage I
Emitter collector voltage I
Collector-emitter cut-off current V
= 1 mA V
C
= 100 µAV
E
= 20 V, If = 0, E = 0 I
CE
CEO
ECO
CEO
32 V
7V
200 nA
www.vishay.com
2
Document Number 83535
Rev. 1.6, 26-Oct-04
Coupler
Parameter Test condition Symbol Min Ty p . Max Unit
Collector emitter saturation
voltage
Cut-off frequency V
Coupling capacitance f = 1 MHz C
= 10 mA, IC = 1 mA V
I
F
= 5 V, IF = 10 mA,
CE
= 100 Ω
R
L
Current Transfer Ratio
Parameter Test condition Part Symbol Min Ty p. Max Unit
I
C/IF
VCE = 5 V, IF = 10 mA TCDT1100
TCDT1100/ TCDT1100G
Vishay Semiconductors
CEsat
f
c
k
TCDT1100G
TCDT1101
TCDT1101G
TCDT1102
TCDT1102G
TCDT1103
TCDT1103G
110 kHz
0.3 pF
CTR 40 %
CTR 40 80 %
CTR 63 125 %
CTR 100 200 %
0.3 V
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input
Parameter Test condition Symbol Min Ty p . Max Unit
Forward current I
F
Output
Parameter Test condition Symbol Min Ty p . Max Unit
Power dissipation P
diss
Coupler
Parameter Test condition Symbol Min Ty p . Max Unit
Rated impulse voltage V
Safety temperature T
IOTM
si
Insulation Rated Parameters
Parameter Test condition Symbol Min Ty p . Max Unit
Partial discharge test voltage Routine test
Partial discharge test voltage Lot test (sample test)
100 %, t
test
= 60 s, t
t
Tr
(see figure 2)
test
= 1 s V
= 10 s,
V
pd
IOTM
V
pd
1.6 kV
6kV
1.3 kV
130 mA
265 mW
6kV
150 °C
Document Number 83535
Rev. 1.6, 26-Oct-04
www.vishay.com
3
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