Vishay SQA401CEJW User Manual
www.vishay.com
PowerPAK® SC-70W-6L Single
Top View
2.05 mm
2.05 mm
1
m
2.05 mm
Bottom View
3
G
2
D
1
D
S
4
D
5
D
6
S
7
21DS4
D
5
6
S
7
S
G
D
P-Channel MOSFET
Automotive P-Channel 20 V (D-S) 175 °C MOSFET
Marking Code: QKXXXX
PRODUCT SUMMARY
VDS (V) -20
R
(Ω) at VGS = -4.5 V 0.125
DS(on)
R
(Ω) at VGS = -2.5 V 0.219
DS(on)
I
(A) -3.75
D
Configuration Single
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• Wettable flank terminals
• 100 % R
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
and UIS tested
g
SQA401CEJW
Vishay Siliconix
ORDERING INFORMATION
Package PowerPAK SC-70W-6L
Lead (Pb)-free and halogen-free
SQA401CEJW
(for detailed order number please see www.vishay.com/doc?79776
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
Gate-source voltage V
a
TC = 25 °C
T
= 125 °C -3.75
C
L = 0.1 mH
T
= 25 °C
C
= 125 °C 4.5
T
C
Continuous drain current
a
Continuous source current (diode conduction)
Pulsed drain current
b
Single pulse avalanche current
Single pulse avalanche energy E
Maximum power dissipation
Operating junction and storage temperature range T
Soldering recommendations (peak temperature)
d, e
DS
± 12
GS
I
D
I
S
IDM -12
I
AS
AS
P
D
, T
J
stg
-20
-3.75
-3.75
-8
3.2 mJ
13.6
-55 to +175
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount
c
Junction-to-case (drain) R
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257
The end of the lead terminal is plated with tin
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Not intended for continuous use with positive gate voltage > 3.0 V
). The PowerPAK SC-70W-6L is a leadless package and features wettable flank terminals.
R
thJA
thJF
90
11
)
V
A
W
°C
°C/W
S21-0091-Rev. A, 08-Feb-2021
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: automostechsupport@vishay.com
1
Document Number: 66844
SQA401CEJW
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
Gate-source threshold voltage V
Gate-source leakage I
Zero gate voltage drain current I
On-state drain current
Drain-source on-state resistance
Forward transconductance
Dynamic
b
a
a
b
Input capacitance C
Reverse transfer capacitance C
Total gate charge
Gate-drain charge
c
c
c
Gate resistance R
Turn-on delay time
Rise time
c
Turn-off delay time
Fall time
c
c
c
I
R
t
t
DS
GS(th)
GSS
DSS
D(on)
DS(on)
g
fs
iss
oss
rss
Q
g
Q
gs
Q
gd
g
d(on)
t
r
d(off)
t
f
Source-Drain Diode Ratings and Characteristics
Pulsed current
Forward voltage V
Body diode reverse recovery time t
Body diode reverse recovery charge Q
Reverse recovery fall time t
Reverse recovery rise time t
Body diode peak reverse recovery current I
a
I
SM
SD
rr
rr
-9-
a
b
RM(REC)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
VGS = -4.5 V VDS ≥ 5 V -8 - - A
VGS = -4.5 V ID = -2.4 A - 0.085 0.125
V
V
V
VGS = -4.5 V VDS = -10 V, ID = -2.4 A
VGS = 0, ID = -250 μA -20 - -
VDS = VGS, ID = -250 μA -0.6 -1.0 -1.3
VDS = 0 V, VGS = ± 12 V - - ± 100 nA
VGS = 0 V VDS = -20 V - - -1
= 0 V VDS = -20 V, TJ = 125 °C - - -50
GS
V
= 0 V VDS = -20 V, TJ = 175 °C - - -150
GS
= -4.5 V ID = -2.4 A, TJ = 125 °C - - 0.175
GS
= -4.5 V ID = -2.4 A, TJ = 175 °C - - 0.200
GS
= -2.5 V ID = -1.8 A - 0.160 0.219
GS
VDS = -10 V, ID = -2.4 A - 6 - S
VGS = 0 V VDS = -10 V, f = 1 MHz
f = 1 MHz 2.8 5.6 8.4 Ω
VDD = -10 V, RL = 5.21 Ω
I
≅ -1.9 A, V
D
= -4.5 V, Rg = 1 Ω
GEN
IF = -2 A, V
= 0 - -0.8 -1.2 V
GS
IF = -1.5 A, di/dt = 100 A/μs
Vishay Siliconix
- 265 330
-7594
-5063
-3.55.5
-0.9-
-1.2-
-2030
-1827
-1928
-812
---12A
-2244ns
-1224nC
-13-
--1-A
V
μA V
Ω
pF Output capacitance C
nC Gate-source charge
ns
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0091-Rev. A, 08-Feb-2021
2
Document Number: 66844
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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