Vishay SQA401CEJW User Manual

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PowerPAK® SC-70W-6L Single

Top View

2.05 mm

2.05 mm

1

m

2.05 mm

Bottom View

3

G

2
D

1
D

S

4

D
5

D
6

S

7

21DS4

D

5

6

S

7

S

G

D

P-Channel MOSFET

Automotive P-Channel 20 V (D-S) 175 °C MOSFET

Marking Code: QKXXXX

PRODUCT SUMMARY

VDS (V) -20

R

(Ω) at VGS = -4.5 V 0.125

DS(on)

R

(Ω) at VGS = -2.5 V 0.219

DS(on)

I

(A) -3.75

D

Configuration Single

FEATURES

• TrenchFET® power MOSFET

• AEC-Q101 qualified

• Wettable flank terminals

• 100 % R

• Material categorization:
for definitions of compliance please see

www.vishay.com/doc?99912

and UIS tested

g

SQA401CEJW

Vishay Siliconix

ORDERING INFORMATION

Package PowerPAK SC-70W-6L

Lead (Pb)-free and halogen-free

SQA401CEJW
(for detailed order number please see www.vishay.com/doc?79776

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

Gate-source voltage V

a

TC = 25 °C

T

= 125 °C -3.75

C

L = 0.1 mH

T

= 25 °C

C

= 125 °C 4.5

T

C

Continuous drain current

a

Continuous source current (diode conduction)

Pulsed drain current

b

Single pulse avalanche current

Single pulse avalanche energy E

Maximum power dissipation

Operating junction and storage temperature range T

Soldering recommendations (peak temperature)

d, e

DS

± 12

GS

I

D

I

S

IDM -12

I

AS

AS

P

D

, T

J

stg

-20

-3.75

-3.75

-8

3.2 mJ

13.6

-55 to +175

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-ambient PCB mount

c

Junction-to-case (drain) R

Notes

a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257

The end of the lead terminal is plated with tin
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Not intended for continuous use with positive gate voltage > 3.0 V

). The PowerPAK SC-70W-6L is a leadless package and features wettable flank terminals.

R

thJA

thJF

90

11

)

V

A

W

°C

°C/W

S21-0091-Rev. A, 08-Feb-2021

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

1

Document Number: 66844

SQA401CEJW

www.vishay.com

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

Gate-source threshold voltage V

Gate-source leakage I

Zero gate voltage drain current I

On-state drain current

Drain-source on-state resistance

Forward transconductance

Dynamic

b

a

a

b

Input capacitance C

Reverse transfer capacitance C

Total gate charge

Gate-drain charge

c

c

c

Gate resistance R

Turn-on delay time

Rise time

c

Turn-off delay time

Fall time

c

c

c

I

R

t

t

DS

GS(th)

GSS

DSS

D(on)

DS(on)

g

fs

iss

oss

rss

Q

g

Q

gs

Q

gd

g

d(on)

t

r

d(off)

t

f

Source-Drain Diode Ratings and Characteristics

Pulsed current

Forward voltage V

Body diode reverse recovery time t

Body diode reverse recovery charge Q

Reverse recovery fall time t

Reverse recovery rise time t

Body diode peak reverse recovery current I

a

I

SM

SD

rr

rr

-9-

a

b

RM(REC)

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature

VGS = -4.5 V VDS ≥ 5 V -8 - - A

VGS = -4.5 V ID = -2.4 A - 0.085 0.125

V

V

V

VGS = -4.5 V VDS = -10 V, ID = -2.4 A

VGS = 0, ID = -250 μA -20 - -

VDS = VGS, ID = -250 μA -0.6 -1.0 -1.3

VDS = 0 V, VGS = ± 12 V - - ± 100 nA

VGS = 0 V VDS = -20 V - - -1

= 0 V VDS = -20 V, TJ = 125 °C - - -50

GS

V

= 0 V VDS = -20 V, TJ = 175 °C - - -150

GS

= -4.5 V ID = -2.4 A, TJ = 125 °C - - 0.175

GS

= -4.5 V ID = -2.4 A, TJ = 175 °C - - 0.200

GS

= -2.5 V ID = -1.8 A - 0.160 0.219

GS

VDS = -10 V, ID = -2.4 A - 6 - S

VGS = 0 V VDS = -10 V, f = 1 MHz

f = 1 MHz 2.8 5.6 8.4 Ω

VDD = -10 V, RL = 5.21 Ω

I

≅ -1.9 A, V

D

= -4.5 V, Rg = 1 Ω

GEN

IF = -2 A, V

= 0 - -0.8 -1.2 V

GS

IF = -1.5 A, di/dt = 100 A/μs

Vishay Siliconix

- 265 330

-7594

-5063

-3.55.5

-0.9-

-1.2-

-2030

-1827

-1928

-812

---12A

-2244ns

-1224nC

-13-

--1-A

V

μA V

Ω

pF Output capacitance C

nC Gate-source charge

ns

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S21-0091-Rev. A, 08-Feb-2021

2

Document Number: 66844

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

10

100

1000

10000

0

4

8

12

16

20

012345

Axis Title

1st line

2nd line

2nd line

I

D

- Drain Current (A)

VDS- Drain-to-Source Voltage (V)

VGS= 4.5 V

VGS= 2 V

VGS= 2.5 V

VGS= 3 V

VGS= 3.5 V

VGS= 4 V

VGS= 5 V

10

100

1000

10000

10

100

1000

0 4 8 12 16 20

Axis Title

1st line

2nd line

2nd line

C - Capacitance (pF)

VDS- Drain-to-Source Voltage (V)

C

rss

C

oss

10

100

1000

10000

0

2

4

6

8

10

012345

Axis Title

1st line

2nd line

2nd line

I

D

- Drain Current (A)

VGS- Gate-to-Source Voltage (V)

TC= 25 °C

TC= -55 °C

TC= 125 °C

10

100

1000

10000

0.0

0.1

0.2

0.3

0.4

0.5

0246810

Axis Title

1st line

2nd line

2nd line

R

DS(on)

- On-Resistance (Ω)

ID- Drain Current (A)

VGS= 4.5 V

VGS= 2.5 V

10

100

1000

10000

0

1

2

3

4

5

012345

Axis Title

1st line

2nd line

2nd line

V

GS

- Gate-to-Source Voltage (V)

Qg- Total Gate Charge (nC)

ID= 2.4 A
V

DS

= 10 V

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

SQA401CEJW

Vishay Siliconix

Output Characteristics

10

8

TC= 25 °C

6

2nd line

4

- Transconductance (S)

fs

2

g

0

012345

ID- Drain Current (A)

TC= -55 °C

TC= 125 °C

Transconductance

C

iss

Transfer Characteristics

On-Resistance vs. Drain Current

S21-0091-Rev. A, 08-Feb-2021

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Capacitance

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Gate Charge

3

For technical questions, contact: [e-mail]

Document Number: 66844

10

100

1000

10000

0.5

0.8

1.1

1.4

1.7

2.0

-50 -25 0 25 50 75 100 125 150 175

Axis Title

1st line

2nd line

2nd line

R

DS(on)

- On-Resistance (Normalized)

TJ- Junction Temperature (°C)

VGS= 4.5 V

VGS= 2.5 V

10

100

1000

10000

0

0.2

0.4

0.6

0.8

1.0

012345

Axis Title

1st line

2nd line

2nd line

R

DS(on)

- On-Resistance (Ω)

VGS- Gate-to-Source Voltage (V)

TJ= 150 °C

TJ= 25 °C

10

100

1000

10000

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1.0 1.2

Axis Title

1st line

2nd line

2nd line

I

S

- Source Current (A)

VSD- Source-to-Drain Voltage (V)

TJ= 25 °C

TJ= 150 °C

10

100

1000

10000

-0.4

-0.2

0

0.2

0.4

0.6

-50 -25 0 25 50 75 100 125 150 175

Axis Title

1st line

2nd line

2nd line

V

GS(th)

- Variance (V)

TJ- Junction Temperature (°C)

ID= 250 μA

10

100

1000

10000

-28

-27

-26

-25

-24

-23

-50 -25 0 25 50 75 100 125 150 175

Axis Title

1st line

2nd line

2nd line

V

DS

- Drain-to-Source Voltage (V)

TJ- Junction Temperature (°C)

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

ID= 2.5 A

SQA401CEJW

Vishay Siliconix

ID= 5 mA

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

ID= 10 mA

Drain Source Breakdown vs. Junction Temperature

100

IDMlimited

10

Axis Title

100 us

10000

1000

1

2nd line

S21-0091-Rev. A, 08-Feb-2021

Source-Drain Diode Forward Voltage

4

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

- Drain Current (A)

D

I

0.1

0.01

0.01 0.1 1 10 100

Note

> minimum VGS at which R

a. V

GS

Limited by R

TC= 25 °C,
single pulse

VDS- Drain-to-Source Voltage (V)

Safe Operating Area

IDlimited

a

DS(on)

BVDSS limited

DS(on)

1 ms
10 ms
100 ms, 1 s, 10 s, DC

100

10

is specified

Document Number: 66844

1st line

2nd line

10

-3

10

-2

1 10 60010

-1

10

-4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single pulse

Duty cycle = 0.5

Square Wave Pulse Duration (s)

tneisnarT evitceffE dezilamroN

ecnadepmI lam

r
e
hT

1. Duty cycle, D =

2. Per unit base = R

thJA

= 90 °C/W

3. T

JM

- TA = PDMZ

thJA

(t)

t

1

t

2

t

1

t

2

Notes:

4. Surface mounted

P

DM

www.vishay.com

THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

Normalized Thermal Transient Impedance, Junction-to-Ambient

SQA401CEJW

Vishay Siliconix

2

1

tneisnarT evitceffE dezilam

Duty cycle = 0.5

ecnad

e
p

mI lamrehT

0.2

0.1

0.1

0.05

r
oN

0.02

Single pulse

0.01

-4

10

-3

10

-2

10

-1

11010

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

5

Document Number: 66844

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66844

.

S21-0091-Rev. A, 08-Feb-2021

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 01-Jan-2021

1

Document Number: 91000