Vishay SiZF906BDT User Manual

SiZF906BDT

www.vishay.com

Vishay Siliconix

Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

• TrenchFET® Gen IV power MOSFET

®

•SkyFET
Schottky

• 100 % Rg and UIS tested

• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912

low side MOSFET with integrated

VIN/D

1

VSW/S1-D

Schottky
Diode

2

2

1

GND/S

PRODUCT SUMMARY

CHANNEL-1 CHANNEL-2

V

(V) 30 30

DS

R

max. () at VGS = 10 V 0.00210 0.00068

DS(on)

R

max. () at VGS = 4.5 V 0.00370 0.00130

DS(on)

Q

typ. (nC) 11.7 38

g

a

I

(A)

D

Configuration Dual

105 257

APPLICATIONS

• CPU core power

• Computer / server peripherals

•POL

• Synchronous buck converter

• Telecom DC/DC

N-Channel 1

MOSFET

GHS/G

1

G1Return/S

GLS/G

2

N-Channel 2

MOSFET

ORDERING INFORMATION

Package PowerPAIR 6 x 5F
Lead (Pb)-free and halogen-free SiZF906BDT-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 UNIT

Drain-source voltage V
Gate-source voltage V

= 25 °C

T

C

= 70 °C 84 206

T

Continuous drain current (T

= 150 °C)

J

C

= 25 °C 36

T

A

TA = 70 °C 29

Pulsed drain current (t = 100 μs) I

= 25 °C

T

Continuous source-drain diode current

Single pulse avalanche current
Single pulse avalanche energy E

Maximum power dissipation

C

TA = 25 °C 4.1

L = 0.1 mH

= 25 °C

T

C

= 70 °C 24 53

T

C

= 25 °C 4.5

T

A

I

P

TA = 70 °C 2.9

Operating junction and storage temperature range TJ, T

d, e

Soldering recommendations (peak temperature)

260

DS

GS

I

D

DM

I

AS

AS

S

D

stg

30 30

+20, -16 +20, -16

105 257

b, c

b, c

63

50

b, c

b, c

120 350

8.5

a

b, c

34 141

b, c

23 40

26.5 80 mJ
38 83

b, c

b, c

5

3.2

b, c

b, c

-55 to +150

V

A

W

°C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL

Maximum junction-to-ambient

b, f

Maximum junction-to-case (source) Steady state R

t  10 s R

thJA

thJC

Notes

a. T

= 25 °C

C

b. Surface mounted on 1" x 1" FR4 board
c. t = 20 s
d. See solder profile (www.vishay.com/doc?73257

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection

). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 60 °C/W for channel-1 and 60 °C/W for channel-2

S20-0516-Rev. A, 29-Jun-2020

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CHANNEL-1 CHANNEL-2

TYP. MAX. TYP. MAX.

22 28 20 25

2.6 3.3 1.2 1.5

Document Number: 77619

UNIT

°C/W

SiZF906BDT

www.vishay.com

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

V

= 0 V, ID = 250 μA Ch-1 30 - -

Drain-source breakdown voltage V

Drain-source breakdown voltage
(transient)

c



V

Gate-source threshold voltage V

Gate-source leakage I

Zero Gate voltage drain current I

On-state drain current

Drain-source on-state resistance

Forward transconductance

Dynamic

a

b

b

b

I

R

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

C

ratio

rss/Ciss

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

Output charge Q

Gate resistance R

DS

DSt

GS(th)

GSS

DSS

V

D(on)

DS(on)

g

fs

iss

oss

rss

g

gs

gd

oss

g

GS

= 0 V, ID = 5 mA Ch-2 30 - -

V

GS

V

= 0 V, t

GS

(transient)

VDS = VGS, ID = 250 μA

V

= 0 V, V

V

DS

DS

= 30 V, V

GS

V

= 30 V, V

DS

GS

 5 V, V

DS

V

= 10 V, ID = 15 A Ch-1 - 0.00150 0.00210

GS

V

= 10 V, ID = 20 A Ch-2 - 0.00045 0.00068

GS

V

= 4.5 V, ID = 10 A Ch-1 - 0.00250 0.00370

GS

V

= 4.5 V, ID = 15 A Ch-2 - 0.00085 0.00130

GS

V

= 10 V, ID = 40 A Ch-1 - 93 -

DS

V

= 10 V, ID = 30 A Ch-2 170 -

DS

Channel-1

V

= 15 V, V

DS

GS

Channel-2

= 15 V, V

V

DS

= 15 V, V

V

DS

GS

GS

Channel-1

V

= 15 V, V

DS

GS

Channel-2

= 15 V, V

V

DS

GS

VDS = 15 V, VGS = 0 V

f = 1 MHz

 1 μs

= +20 V, -16 V

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

= 0 V, f = 1 MHz

= 0 V, f = 1 MHz

= 10 V, ID = 20 A

= 4.5 V, ID = 20 A

= 4.5 V, ID = 20 A

Ch-1 36 - -

Ch-2 36 - -

Ch-1 1.1 - 2.2

Ch-2 1.1 - 2.2

Ch-1 - - ± 100

Ch-2 - - ± 100

Ch-1 - - 1

Ch-2 - 100 1000

Ch-1 - - 5

Ch-2 - 500 5000

Ch-1 20 - -

Ch-2 20 - -

Ch-1 - 1630 -

Ch-2 - 5550 -

Ch-1 - 690 -

Ch-2 - 2320 -

Ch-1 - 50 -

Ch-2 - 205 -

Ch-1 - 0.030 0.060

Ch-2 0.037 0.080

Ch-1 - 25 49

Ch-2 - 81 165

Ch-1 11.7 22

Ch-2 - 38 80

Ch-1 - 5.8 -

Ch-2 - 17.8 -

Ch-1 - 2.9 -

Ch-2 - 8.4 -

Ch-1 - 18 -

Ch-2 - 65 -

Ch-1 0.2 1.2 2

Ch-2 0.12 0.6 1.2

Vishay Siliconix

V

nA

μA

A



S

pF

nC



S20-0516-Rev. A, 29-Jun-2020

2

Document Number: 77619

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiZF906BDT

www.vishay.com

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Dynamic

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

Pulse diode forward current

Body diode voltage V

Body diode reverse recovery time t

Body diode reverse recovery charge Q

Reverse recovery fall time t

Reverse recovery rise time t

Notes

a. Guaranteed by design, not subject to production testing
b. Pulse test; pulse width  300 μs, duty cycle  2 %
c. Based on characterization, not subject to production testing









Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

a

d(on)

I

r

d(off)

f

d(on)

r

d(off)

f

S

a

I

SM

SD

rr

rr

a

b

 10 A, V

D

I

 10 A, V

D

I

 10 A, V

D

I

 10 A, V

D

Channel-1

= 15 V, RL = 1.5 

V

DD

= 4.5 V, Rg = 1 

GEN

Channel-2

= 15 V, RL = 1.5 

V

DD

= 4.5 V, Rg = 1 

GEN

Channel-1

= 15 V, RL = 1.5 

V

DD

= 10 V, Rg = 1 

GEN

Channel-2

= 15 V, RL = 1.5 

V

DD

= 10 V, Rg = 1 

GEN

TC = 25 °C

IS = 10 A, V

= 5 A, V

I

S

= 0 V Ch-1 - 0.8 1.1

GS

= 0 V Ch-2 - 0.39 0.59

GS

Channel-1

I

= 10 A, di/dt = 100 A/μs,

F

T

= 25 °C

J

Channel-2

= 10 A, di/dt = 100 A/μs,

I

F

T

= 25 °C

J

Ch-1 - 22 40

Ch-2 - 40 80

Ch-1 - 75 150

Ch-2 - 130 260

Ch-1 - 21 40

Ch-2 - 41 80

Ch-1 - 10 20

Ch-2 - 20 40

Ch-1 - 12 20

Ch-2 - 20 40

Ch-1 - 5 10

Ch-2 - 30 60

Ch-1 - 22 40

Ch-2 - 40 80

Ch-1 - 5 10

Ch-2 - 10 20

Ch-1 - - 34

Ch-2 - - 141

Ch-1 - - 120

Ch-2 - - 350

Ch-1 - 27 55

Ch-2 - 55 110

Ch-1 - 17 35

Ch-2 - 65 130

Ch-1 - 15 -

Ch-2 - 31 -

Ch-1 - 12 -

Ch-2 - 24 -

Vishay Siliconix

ns

A

V

ns

nC

ns

S20-0516-Rev. A, 29-Jun-2020

3

Document Number: 77619

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

10

100

1000

10000

0.0005

0.0010

0.0015

0.0020

0.0025

0.0030

0.0035

0 20406080100120

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Ω)

ID- Drain Current (A)

VGS= 10 V

VGS= 4.5 V

10

100

1000

10000

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50-25 0 255075100125150

Axis Title

1st line

2nd line

2nd line

R

DS(on)

- On-Resistance (Normalized)

TJ- Junction Temperature (°C)

VGS= 4.5 V

VGS= 10 V

www.vishay.com

CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SiZF906BDT

Vishay Siliconix

120

100

80

60

2nd line

40

- Drain Current (A)

D

I

20

0

0 0.51.01.52.02.53.0

VDS- Drain-to-Source Voltage (V)

Axis Title

VGS= 10 V thru 4 V

VGS= 3 V

10000

1000

100

10

1st line

2nd line

Output Characteristics

2nd line

2nd line

120

100

80

60

40

- Drain Current (A)

D

I

20

0

01234

VGS- Gate-to-Source Voltage (V)

Transfer Characteristics

10 000

1000

100

C - Capacitance (pF)

Axis Title

TC= 25 °C

TC= 125 °C

Axis Title

C

rss

C

oss

TC= -55 °C

C

iss

10000

1000

100

10

10000

1000

100

1st line

2nd line

1st line

2nd line

On-Resistance vs. Drain Current

10

ID= 20 A

8

6

2nd line

4

- Gate-to-Source Voltage (V)
2

GS

V

0

S20-0516-Rev. A, 29-Jun-2020

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

VDS= 7.5 V

0 5 10 15 20 25 30

Qg- Total Gate Charge (nC)

Gate Charge

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Axis Title

VDS= 15 V

VDS= 24 V

10

0 5 10 15 20

VDS- Drain-to-Source Voltage (V)

10000

1000

100

10

1st line

2nd line

ID= 15 A

On-Resistance vs. Junction Temperature

4

For technical questions, contact: [e-mail]

10

Capacitance

Document Number: 77619