VISHAY SIHP22N60EF-GE3 Datasheet

SiHP22N60EF

TO-220AB

G

D

S

www.vishay.com

Vishay Siliconix

EF Series Power MOSFET With Fast Body Diode

G

N-Channel MOSFET

PRODUCT SUMMARY

VDS (V) at TJ max. 650

R

typ. () at 25 °C VGS = 10 V 0.158

DS(on)

Q

max. (nC) 96

g

Q

(nC) 9

gs

Q

(nC) 21

gd

Configuration Single

D

FEATURES

• Low figure-of-merit (FOM) Ron x Q

• Low input capacitance (C

iss

)

g

• Reduced switching and conduction losses

• Ultra low gate charge (Q

)

g

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

S

please see www.vishay.com/doc?99912

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free and halogen-free SiHP22N60EF-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

Gate-source voltage V

T

= 25 °C

Continuous drain current (T

Pulsed drain current

a

= 150 °C) VGS at 10 V

J

C

= 100 °C 12

C

DS

GS

I

D

I

DM

Linear derating factor 1.4 W/°C

Single pulse avalanche energy

Maximum power dissipation P

Operating junction and storage temperature range T

Drain-source voltage slope T

Reverse diode dv/dt

d

Soldering recommendations (peak temperature)

b

= 125 °C

J

c

For 10 s 260 °C

E

AS

D

, T

J

dv/dt

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature b. V

= 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 3.2 A

DD

c. 1.6 mm from case d. I

 ID, di/dt = 400 A/μs, starting TJ = 25 °C

SD

600

± 30

19

46

144 mJ

179 W

-55 to +150 °C

70

50

V

AT

V/ns

S19-0120-Rev. A, 04-Feb-2019

1

Document Number: 92244

For technical questions, contact: hvm@vishay.com

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHP22N60EF

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum junction-to-ambient R

Maximum junction-to-case (drain) R

thJA

thJC

-62

-0.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

V

temperature coefficient VDS/T

DS

Gate-source threshold voltage (N) V

Gate-source leakage I

Zero gate voltage drain current I

Drain-source on-state resistance R

Forward transconductance

a

Dynamic

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Effective output capacitance, energy

a

b

C

Total gate charge Q

Gate-drain charge Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Gate input resistance R

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

Pulsed diode forward current I

DS

GS(th)

GSS

DSS

DS(on)

g

fs

iss

oss

rss

o(er)

o(tr)

g

gs

gd

d(on)

r

d(off)

f

g

S

SM

J

MOSFET symbol showing the  integral reverse p - n junction diode

VGS = 0 V, ID = 250 μA 600 - - V

Reference to 25 °C, ID = 1 mA - 0.68 - V/°C

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

VGS = ± 20 V - - ± 100 nA

V

= ± 30 V - - ± 1 μA

GS

VDS = 480 V, VGS = 0 V - - 1

= 480 V, VGS = 0 V, TJ = 125 °C - - 500

V

DS

VGS = 10 V ID = 11 A - 0.158 0.182 

VDS = 30 V, ID = 11 A - 5.8 - S

VGS = 0 V,

V

= 100 V,

DS

f = 1 MHz

VDS = 0 V to 480 V, VGS = 0 V

VGS = 10 V ID = 11 A, VDS = 480 V

VDD = 480 V, ID = 11 A, V

= 10 V, Rg = 9.1 

GS

f = 1 MHz, open drain 0.3 0.6 1.2 

Vishay Siliconix

°C/W

μA

- 1423 -

-73-

-5-

-48-

- 240 -

-4896

-9-

-21-

-1530

-2142

-5887

-2550

--19

--46

pF

nC Gate-source charge Q

ns

A

Diode forward voltage V

Reverse recovery time t

Reverse recovery charge Q

Reverse recovery current I

SD

rr

RRM

TJ = 25 °C, IS = 11 A, VGS = 0 V - - 1.2 V

TJ = 25 °C, IF = IS = 11 A,

di/dt = 100 A/μs, V

= 400 V

R

- 113 226 ns

-0.71.4μC

-11-A

Notes

a. C b. C

is a fixed capacitance that gives the same energy as C

oss(er)

is a fixed capacitance that gives the same charging time as C

oss(tr)

S19-0120-Rev. A, 04-Feb-2019

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: hvm@vishay.com

while VDS is rising from 0 % to 80 % V

oss

while V

oss

is rising from 0 % to 80 % V

DS

2

DSS

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10

100

1000

10000

0

10

20

30

40

50

0 5 10 15 20

Axis Title

2nd line

I

D

- Drain-to-Source Current (A)

VDS- Drain-to-Source Voltage (V)

TJ= 25 °C

8 V

7 V

6 V

5 V

15 V 14 V 13 V 12 V 11 V 10 V

9 V

10

100

1000

10000

0

8

16

24

32

0 5 10 15 20

Axis Title

2nd line

I

D

- Drain-to-Source Current (A)

VDS- Drain-to-Source Voltage (V)

15 V 14 V 13 V 12 V 11 V 10 V

9 V

TJ= 150 °C

7 V

6 V

5 V

8 V

10

100

1000

10000

0

15

30

45

60

0 5 10 15 20

Axis Title

2nd line

I

D

- Drain-to-Source Current (A)

VGS- Gate-to-Source Voltage (V)

TJ= 25 °C

VDS= 28.4 V

10

100

1000

10000

0

0.5

1.0

1.5

2.0

2.5

3.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

Axis Title

1st line

R

DS(on)

- Drain-to-Source On-Resistance

(Normalized)

TJ- Junction Temperature (°C)

VGS= 10 V

10

100

1000

10000

0.1

1

10

100

1000

10 000

100 000

0 100 200 300 400 500 600

Axis Title

1st line

2nd line

C - Capacitance (pF)

VDS- Drain-to-Source Voltage (V)

iss

C

rss

C

oss

VGS= 0 V, f = 1 MHz C

iss

= Cgs+ Cgd, Cdsshorted

C

rss

= C

gd

C

oss

= Cds+ C

gd

0

2

4

6

8

10

12

14

10

100

1000

10 000

0 100 200 300 400 500 600

Axis Title

E

oss

- Output Capacitance Stored Energy (µJ)

2nd line

C

oss

- Output Capacitance (pF)

VDS- Drain-to-Source Voltage (V)

E

oss

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

I

D

SiHP22N60EF

Vishay Siliconix

= 11 A

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

C

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

S19-0120-Rev. A, 04-Feb-2019

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Fig. 3 - Typical Transfer Characteristics

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TJ= 150 °C

3

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C

oss

Fig. 6 - C

oss

and E

vs. V

oss

DS

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10

100

1000

10000

0

3

6

9

12

0 15304560

Axis Title

2nd line

V

GS

- Gate-to-Source Voltage (V)

Qg- Total Gate Charge (nC)

VDS= 480 V V

DS

= 300 V

V

DS

= 120 V

10

100

1000

10000

0.1

1

10

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4

Axis Title

2nd line

I

SD

- Reverse Drain Current (A)

VSD- Source-Drain Voltage (V)

TJ= 25 °C

TJ= 150 °C

VGS= 0 V

10

100

1000

10000

0.01

0.1

1

10

100

1101001000

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

VDS- Drain-to-Source Voltage (V)

I

limited

TC= 25 °C, T

J

= 150 °C,

single pulse

Limited by R

DS(on)

a

BVDSS limited

10 ms

1 ms

100 µs

Operation in this area limited by R

DS(on)

10

100

1000

10000

0

5

10

15

20

25 50 75 100 125 150

Axis Title

2nd line

I

D

- Drain Current (A)

TC- Case Temperature (°C)

10

100

1000

10000

600

625

650

675

700

725

750

775

-60 -40 -20 0 20 40 60 80 100 120 140 160

Axis Title

2nd line

V

DS

- Drain-to-Source Breakdown Voltage (V)

TJ- Junction Temperature (°C)

SiHP22N60EF

Vishay Siliconix

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Typical Source-Drain Diode Forward Voltage

Fig. 10 - Maximum Drain Current vs. Case Temperature

ID= 1 mA

Fig. 11 - Temperature vs. Drain-to-Source Voltage

Note

a. V

GS

S19-0120-Rev. A, 04-Feb-2019

DS(on)

is specified

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Document Number: 92244

Fig. 9 - Maximum Safe Operating Area

> minimum VGS at which R

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10

100

1000

10000

0.01

0.1

1

0.0001 0.001 0.01 0.1 1

Axis Title

1st line

2nd line

Normalized Effective Transient

Thermal Impedance

Pulse Time (s)

0.2

0.02

0.05

0.1

Single pulse

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

R

g

I

AS

0.01 Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

10 V

Vary t

p

to obtain

required I

AS

I

AS

V

DS

V

DD

V

DS

t

p

Duty cycle = 0.5

V

DS

V

GS

R

g

Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case

R

D

D.U.T.

+

V

-

DD

SiHP22N60EF

Vishay Siliconix

10 V

Pulse width ≤ 1 μs Duty factor ≤ 0.1 %

Fig. 13 - Switching Time Test Circuit

Fig. 16 - Unclamped Inductive Waveforms

Q

10 V

V

Q

gs

G

g

Q

gd

Charge

Fig. 14 - Switching Time Waveforms

Fig. 17 - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

50 kΩ

0.2 μF

12 V

0.3 μF

D.U.T.

+

V

DS

-

V

S19-0120-Rev. A, 04-Feb-2019

Fig. 15 - Unclamped Inductive Test Circuit

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GS

3 mA

Current sampling resistors

Fig. 18 - Gate Charge Test Circuit

I

G

I

D

Document Number: 92244

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P.W.

Period

di/dt

Diode recovery

dv/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied voltage

Reverse recovery current

Body diode forward

current

VGS = 10 V a

V

DD

I

SD

Driver gate drive

D.U.T. I

SD

waveform

D.U.T. V

DS

waveform

Inductor current

D =

P.W.

Period

+

-

+

-

Note

a. V

GS

= 5 V for logic level devices

Peak Diode Recovery dv/dt Test Circuit

V

DD

• dv/dt controlled by R

g

• Driver same type as D.U.T.

• I

SD

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance current transformer

R

g

2

1

2

1

3

4

3

SiHP22N60EF

Vishay Siliconix

Fig. 19 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92244

S19-0120-Rev. A, 04-Feb-2019

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.

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M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220-1

DIM.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

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Revison: 14-Dec-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ASE Xi’an

For technical questions, contact: hvm@vishay.com

Package Picture

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Document Number: 66542

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Revision: 01-Jan-2019

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Document Number: 91000