VISHAY SI7850DP-GE3 Datasheet

T

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N-Channel 60 V (D-S) Fast Switching MOSFET

Si7850DP

Vishay Siliconix

PowerPAK® SO-8 Single

D

D

7

D

6

5

D
8

FEATURES

• TrenchFET® power MOSFETs

• New low thermal resistance PowerPAK
package with low 1.07 mm profile

• PWM optimized for fast switching

6.15 mm

Top View

1

5.15 mm

Bottom View

• 100 % R

1

2

S

3

S

4

S

G

• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Primary side switch for 24 V DC/DC applications

tested

g

• Secondary synchronous rectifier

PRODUCT SUMMARY

VDS (V) 60

max. () at VGS = 10 V 0.022

R

DS(on)

R

max. () at VGS = 4.5 V 0.031

DS(on)

Q

typ. (nC) 18

g

(A) 10.3

I

D

Configuration Single

ORDERING INFORMATION

Package PowerPAK SO-8
Lead (Pb)-free Si7850DP-T1-E3
Lead (Pb)-free and halogen-free Si7850DP-T1-GE3

®

Available

D

G

S

N-Channel MOSFE

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL 10 s STEADY STATE UNIT

Drain-source voltage V
Gate-source voltage V

Continuous drain current (T

= 150 °C)

J

a

TA = 25 °C

= 85 °C 7.5 4.5

T

A

Continuous source current I
Pulsed drain current I
Avalanche current
Single avalanche energy

Maximum power dissipation

b

b

a

TA = 25 °C

= 85 °C 2.3 0.9

T

A

Operating junction and storage temperature range T

DS

GS

I

D

S

DM

I

AS

E

AS

P

D

, T

J

stg

60 60

± 20 ± 20

10.3 6.2

3.7 1.5
40 40
15 15
11 11 mJ

4.5 1.8

-55 to +150 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum junction-to-ambient

a

Maximum junction-to-case (drain) Steady state R

t  10 s

R

thJA

thJC

Notes

a. Surface mounted on 1" x 1" FR4 board
b. Guaranteed by design, not subject to production testing

S09-0227-Rev. E, 09-Feb-09

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

22 28

2.6 3.3

Document Number: 71625

V

A

W

°C/WSteady state 58 70

Si7850DP

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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

Gate threshold voltage V

Gate-body leakage I

Zero gate voltage drain current I

On-state drain current

a

Drain-source on-state resistance

Forward transconductance

Diode forward voltage

Dynamic

b

a

a

Total gate charge Q

Gate-drain charge Q

Gate resistance R

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Source-drain reverse recovery time t

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

a

R

DS(on)

g

fs

V

SD

g

gs

gd

g

d(on)

r

d(off)

f

rr

Notes

a. Pulse test: pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = 250 μA 60 - -

V

= VGS, ID = 250 μA 1 - 3

DS

VDS = 0 V, VGS = ± 20 V - - ± 100 nA

V

V

DS

= 60 V, V

DS

= 60 V, V

GS

V

 5 V, V

DS

V

= 10 V, ID = 10.3 A - 0.018 0.022

GS

= 4.5 V, ID = 8.7 A - 0.025 0.031

V

GS

= 0 V - - 1

GS

= 0 V, TJ = 55 °C - - 20

= 10 V 40 - - A

GS

VDS = 15 V, ID = 10.3 A - 26 - S

IS = 3.8 A, V

= 0 V - 0.85 1.2 V

GS

-1827

VDS = 30 V, V

= 10 V, ID = 10.3 A

GS

-3.4-

-5.3-

0.5 1.4 2.2 

-1020

VDD = 30 V, RL = 30 

I

 1 A, V

D

= 10 V, Rg = 6 

GEN

-1020

-2550

-1224

IF = 3.8 A, di/dt = 100 A/μs - 50 80

Vishay Siliconix

V

μA



nCGate-source charge Q

ns

S09-0227-Rev. E, 09-Feb-09

2

Document Number: 71625

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

0

8

16

24

32

40

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = 10 V thru 5 V

4 V

3V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

0

8

16

24

32

40

012345

TC = 150 °C

- 55 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

25 °C

0

2

4

6

8

10

0 4 8 12 16 20

VDS = 30 V
I

D

= 10.3 A

- Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

V

GS

2.0 2.5

1

10

50

0 0.5 1.0 1.5

TJ = 25 °C

TJ = 150 °C

V

SD

- Source-to-Drain Voltage (V)

- Source Current (A)I

S

0

200

400

600

800

1000

1200

1400

0 102030405060

C

rss

C

oss

C

iss

VDS - Drain-to-Source Voltage (V)

C - Capacitance (pF)

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Si7850DP

Vishay Siliconix

Output Characteristics

Transfer Characteristics

0.06

0.05

0.04

0.03

- On-Resistance ()R

0.02

DS(on)

0.01

0.00
0 8 16 24 32 40

On-Resistance vs. Drain Current

S09-0227-Rev. E, 09-Feb-09

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ID - Drain Current (A)

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VGS = 4.5 V

Source-Drain Diode Forward Voltage

VGS = 10 V

3

For technical questions, contact: [e-mail]

Gate Charge

Capacitance

Document Number: 71625

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150

VGS = 10 V
I

D

= 10.3 A

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance (Normalized)

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0246810

ID = 10.3 A

- On-Resistance ()

R

DS(on)

VGS - Gate-to-Source Voltage (V)

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

0.2

0.4

-50 -25 0 25 50 75 100 125 150

ID = 250 µA

Variance (V)V

GS(th)

TJ - Temperature (°C)

0.01

0

1

100

40

60

10 6000.1

Time (s)

20

80

Power (W)

100

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Si7850DP

Vishay Siliconix

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

Single Pulse Power

S09-0227-Rev. E, 09-Feb-09

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4

For technical questions, contact: [e-mail]

Document Number: 71625