VISHAY SI7465DP-GE3 Datasheet

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Si7465DP

Vishay Siliconix

P-Channel 60 V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V) R

-60

Ordering Information:

Si7465DP-T1-E3 (Lead (Pb)-free)
Si7465DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

0.064 at V

0.080 at V

6.15 mm

D

8

7

D

()I

DS(on)

= -10 V -5

GS

= -4.5 V -4.5

GS

PowerP AK SO-8

S

1

2

D

6

D

5

Bottom View

(A) Qg (TYP.)

D

5.15 mm

S

S

3

G

4

26

FEATURES

• TrenchFET® Power MOSFET

• New Low Thermal Resistance PowerPAK
Package with Low 1.07 mm Profile

• Material categorization:
For definitions of compliance please see

www.vishay.com/doc?99912

S

G

P-Channel MOSFET

D

®

Available

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL 10 s STEADY STATE UNIT

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current (T

= 150°C)

J

a

TA = 25 °C

T

= 70 °C -4 -2.6

A

Pulsed Drain Current I

Continuous Source Current (Diode Conduction)

Avalanche Current

Single Pulse Avalanche Energy E

Maximum Power Dissipation

a

a

L = 0.1 mH

TA = 25 °C

= 70 °C 2.2 0.94

T

A

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

b,c

DS

GS

I

D

DM

I

S

I

AS

AS

P

D

, T

J

stg

-5 -3.2

-2.9 -1.2

3.5 1.5

-60

± 20

-25

22

24.2 mJ

-55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum Junction-to-Ambient

a

Maximum Junction-to-Case (Drain) Steady State R

t  10 s

R

thJA

thJC

Notes

a. Surface mounted on 1" x 1" FR4 board.
b. See solder profile (www.vishay.com/ppg?73257

). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.

c. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.

S13-2263-Rev. D, 04-Nov-13

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

27 36

°C/WSteady State 60 85

3.3 4.3

Document Number: 73113

0

5

10

15

20

25

30

0246810

VGS = 10 V thru 5 V

3 V

V

DS

- Drain-to-Source Voltage (V)

I

D

- Drain Current (A)

4 V

Si7465DP

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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

a

a

GS(th)

GSS

DSS

I

V

D(on)

R

DS(on)

g

fs

V

SD

Total Gate Charge Qg

gs

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

7

gd

g

d(on)

r

65 100

d(off)

f

rr

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

VDS = VGS, ID = -250 μA -1 -3 V

VDS = 0 V, VGS = ± 20 V ± 100 nA

VDS = -60 V, VGS = 0 V -1

= -60 V, VGS = 0 V, TJ = 70 °C -10

V

DS

 -5 V, VGS = -10 V -25 A

DS

V

= -10 V, ID = -5 A 0.051 0.064

GS

V

= -4.5 V, ID = -4.5 A 0.064 0.080

GS

VDS = -15 V, ID = -5 A 16 S

IS = -2.9 A, VGS = 0 V -0.8 -1.2 V

V

= -30 V, VGS = -10 V, ID = -5 A

DS

= -30 V, RL = 30 

V

DD

I

 -1 A, V

D

= –10 V, Rg = 6 

GEN

IF = -5 A, dI/dt = 100 A/μs 41 70

Vishay Siliconix

μA



26 40

4.5

7 

815

915

30 45

nCGate-Source Charge Q

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

S13-2263-Rev. D, 04-Nov-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Output Characteristics Transfer Characteristics

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

30

25

20

15

- Drain Current (A)

10

D

I

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

V

GS

2

For technical questions, contact: [e-mail]

TC = 125 °C

25 °C

- 55 °C

- Gate-to-Source Voltage (V)

Document Number: 73113

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0 5 10 15 20 25 30

VGS = 10 V

I

D

- Drain Current (A)

VGS = 4.5 V

R

DS(on)

- On-Resistance ()

0

4

8

12

16

20

0 1020304050

VDS = 30 V
I

D

= 5 A

- Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

V

GS

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD- Source-to-Drain Voltage (V)

TJ = 150 °C

TJ = 25 °C

40

10

1

I

S

- Source Current (A)

0

300

600

900

1200

1500

1800

0 102030405060

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

rss

oss

C

iss

C

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50-

25 0255075 100 125 150

VGS = 10 V
I

D

= 5 A

TJ- Junction Temperature (°C)

(Normalized)- On-Resistance

R

DS(on)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0246810

R

DS(on)

- On-Resistance ()

VGS- Gate-to-Source Voltage (V)

ID = 5 A

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Si7465DP

Vishay Siliconix

On-Resistance vs. Drain Current

Gate Charge

Capacitance

On-Resistance vs. Junction Temperature

S13-2263-Rev. D, 04-Nov-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Source-Drain Diode Forward Voltage

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

On-Resistance vs. Gate-to-Source Voltage

3

For technical questions, contact: [e-mail]

Document Number: 73113

- 0.4

- 0.2

0.0

0.2

0.4

0.6

0.8

1.0

- 50 - 25 0 25 50 75 100 125 150

ID = 250 µA

Variance (V)V

GS(th)

TJ - Temperature (°C)

10

-3

10

-2

1 10 60010

-1

10

-4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

Normalized Effective Transient

Thermal Impedance

1. Duty Cycle, D =

2. Per Unit Base = R

thJA

= 85 °C/W

3. T

JM

- TA = PDMZ

thJA

(t)

t

1

t

2

t

1

t

2

Notes:

4. Surface Mounted

P

DM

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100

80

60

Power (W)

40

20

Si7465DP

Vishay Siliconix

0

0.001

0.1

1

Time (s)

Threshold Voltage Single Pulse Power, Junction-to-Ambient

100

Limited by R

10

1

0.1

- Drain Current (A)

D

I

0.01

0.001

0.1 1 10 100

*V

DS(on)*

TA = 25 °C

Single Pulse

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

GS

DS(on)

is specified

10 µs

100 µs

1 ms

10 ms

100 ms

1 s

10 s

100 s, DC

Safe Operating Area

100.01

S13-2263-Rev. D, 04-Nov-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Normalized Thermal Transient Impedance, Junction-to-Ambient

4

For technical questions, contact: [e-mail]

Document Number: 73113