VISHAY SI7149ADP-GE3 Datasheet

PRODUCT SUMMARY

S

G

D

P-Channel MOSFET

VDS (V) R

0.0052 at V

- 30

0.0095 at V

() Max. ID (A) Qg (Typ.)

DS(on)

= - 10 V

GS

= - 4.5 V

GS

PowerPAK SO-8

P-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET® Power MOSFET

• Low On-Resistance for Low Voltage Drop

- 50

- 50

d

43.1 nC

d

• Extended V

• 100 % R

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

max. Rating: 25 V

GS

and UIS Tested

g

Si7149ADP

Vishay Siliconix

APPLICATIONS

• Battery, Load and Adaptor Switches

- Notebook Computers

- Notebook Battery Packs

D

S

1

S

2

Bottom View

S

3

5.15 mm

G

4

6.15 mm

D

8

D

7

D

6

5

Ordering Information:

Si7149ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current (t = 100 µs)

Continuous Source-Drain Diode Current

Avalanche Current

Single-Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

e, f

T

= 25 °C

C

= 70 °C

T

C

TA = 25 °C

TA = 70 °C

T

= 25 °C

C

TA = 25 °C

L = 0.1 mH

T

= 25 °C

C

T

= 70 °C 31

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

- 30

± 25

d

- 50

d

- 50

a, b

- 23.1

a, b

- 18.4

- 300

d

- 50

a, b

- 4.1

- 25

31.2 mJ

V

A

48

P

D

, T

T

J

stg

a, b

5

a, b

3.2

- 55 to 150

260

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Case

Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 70 °C/W.
d. Package limited.
e. See solder profile (www.vishay.com/doc?73257

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 62839
S13-1158-Rev. A, 13-May-13

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

a, c

t 10 s

Steady State

R

thJA

R

thJC

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

For technical questions, contact: [e-mail]

This document is subject to change without notice.

21 25

2.1 2.6

°C/W

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Si7149ADP

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient VDS/T

DS

V

Temperature Coefficient V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay T i m e

Rise Time

Turn-Off DelayTime

Fall Time

Tur n -O n De l ay T i m e

Rise Time

Turn-Off DelayTime

Fall Time

V

DS

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

J

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current I

Pulse Diode Forward Current (100 µs) I

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Fall Time t

Reverse Recovery Rise Time t

S

SM

SD

rr

rr

a

b

Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

V

= - 15 V, V

DS

 - 10 A, V

I

D

 - 10 A, V

I

D

IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0, ID = - 250 µA

GS

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 25 V

V

= - 30 V, VGS = 0 V

DS

= - 30 V, V

V

 - 10 V, V

DS

V

GS

V

GS

V

DS

= - 15 V, V

= - 15 V, V

= 0 V, TJ = 55 °C

GS

= - 10 V - 30 A

GS

= - 10 V, ID = - 15 A

= - 4.5 V, ID = - 10 A

= - 10 V, ID = - 15 A

= 0 V, f = 1 MHz

GS

= - 10 V, ID = - 10 A

GS

= - 4.5 V, ID = - 10 A

GS

f = 1 MHz 0.5 2.4 4.8 

V

= - 15 V, RL = 1.5 

DD

V

DD

= - 10 V, Rg = 1 

GEN

= - 15 V, RL = 1.5 

= - 4.5 V, Rg = 1 

GEN

TC = 25 °C - 50

IS = - 3 A, V

GS

- 30 V

- 22

4.1

mV/°C

- 1.2 - 2.5 V

± 100 nA

- 1

- 5

0.0042 0.0052

0.0076 0.0095

60 S

5125

615

554

90 135

43.1 65

13.6

28.8

15 30

12 24

58 110

12 24

60 120

60 120

52 100

26 52

- 300

= 0 - 0.74 - 1.20 V

23 46 ns

12 24 nC

9

14

µA



pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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For technical questions, contact: [e-mail]

This document is subject to change without notice.

Document Number: 62839

S13-1158-Rev. A, 13-May-13

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0

30

60

90

120

150

0.0 1.0 2.0 3.0 4.0 5.0

I

D

- Drain Current (A)

VDS - Drain-to-Source Voltage (V)

V

GS

= 3 V

VGS = 4 V

V

GS

= 2 V

0

2

4

6

8

10

0 20 40 60 80 100

V

GS

- Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

VDS = 15 V

VDS = 20 V

VDS = 10 V

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

R

DS(on)

- On-Resistance (Normalized)

TJ - Junction Temperature (°C)

ID = 15 A

VGS = 4.5 V

150

VGS = 10 V thru 5 V

120

90

Si7149ADP

Vishay Siliconix

Output Characteristics

0.0150

0.0120

0.0090

0.0060

- On-Resistance (Ω)

DS(on)

R

0.0030

0.0000
0 20 40 60 80 100

VGS = 4.5 V

VGS = 10 V

ID - Drain Current (A)

On-Resistance vs. Drain Current

60

- Drain Current (A)

D

I

30

0

0.0 1.0 2.0 3.0 4.0 5.0 6.0

TC = 25 °C

= 125 °C

T

C

VGS - Gate-to-Source Voltage (V)

= - 55 °C

T

C

Transfer Characteristics

7000

C

iss

5600

4200

2800

C - Capacitance (pF)

1400

0

C

oss

C

rss

0 4 8 12 16 20

VDS - Drain-to-Source Voltage (V)

Capacitance

ID = 10 A

Document Number: 62839
S13-1158-Rev. A, 13-May-13

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Gate Charge

On-Resistance vs. Junction Temperature

For technical questions, contact: [e-mail]

This document is subject to change without notice.

VGS = 10 V

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Si7149ADP

- 0.4

- 0.2

0.20

0.4

0.6

0.8

- 50 - 25 0 25 50 75 100 125 150

V

GS(th)

- Variance (V)

TJ - Temperature (°C)

0

50

100

150

200

250

0.001 0.01 0.1 1 10

Power (W)

Time (s)

0.01

0.1

1

10

100

1000

0.01 0.1 1 10 100

I

D

- Drain Current (A)

VDS - Drain-to-Source Voltage (V)

* V

GS

> minimum VGS at which R

DS(on)

is specied

100 μs

100 ms

Limited by R

)

*

IDM Limited

Single Pulse

ID Limited

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100

- Source Current (A)

S

I

0.01

0.001

10

0.1

TJ = 150 °C

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD - Source-to-Drain Voltage (V)

TJ = 25 °C

Source-Drain Diode Forward Voltage

I

= 250 μA

I

= 1 mA

0.030

0.024

0.018

0.012

- On-Resistance (Ω)

DS(on)

R

0.006

TJ = 25 °C

0.000
0 2 4 6 8 10

VGS - Gate-to-Source Voltage (V)

ID = 15 A

TJ = 125 °C

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

Single Pulse Power, Junction-to-Ambient

1 ms

10 ms

1 s

10 s

DC

DS(on

TA = 25 °C

BVDSS Limited

Safe Operating Area

This document is subject to change without notice.

Document Number: 62839

S13-1158-Rev. A, 13-May-13