New Product
Dual P-Channel 30-V (D-S) MOSFET
Si4925DDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) R
- 30
0.029 at V
0.041 at V
(Ω)
DS(on)
= - 10 V - 8
GS
= - 4.5 V - 8
GS
d, e
I
(A)
D
Qg (Typ.)
15 nC
FEATURES
• Halogen-free
•TrenchFET
®
Power MOSFET
• 100 % UIS Tested
APPLICATIONS
RoHS
COMPLIANT
• Load Switches
- Notebook PCs
- Desktop PCs
SO-8
S
1
1
G
2
1
S
3
2
G
4
2
Top View
Ordering Information: Si4925DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
8
1
D
7
1
D
6
2
D
5
2
- Game Stations
G
1
P-Channel MOSFET
S
1
G
2
D
1
P-Channel MOSFET
S
2
D
2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
= 150 °C)
J
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
= 25 °C
C
= 70 °C
T
C
TA = 25 °C
TA = 70 °C
T
= 25 °C
C
T
= 25 °C
A
L = 0.1 mH
T
= 25 °C
C
T
= 70 °C 3.2
C
T
= 25 °C
A
TA = 70 °C
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
- 30
± 20
e
- 8.0
e
- 8.0
a, b
- 7.3
a, b
- 5.9
e
- 32
- 4.1
a, b
- 2.0
- 20
20 mJ
V
A
5.0
P
D
, T
T
J
stg
a, b
2.5
a, b
1.6
- 55 to 150 °C
W
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on T
e. Limited by package.
= 25 °C.
C
Document Number: 68969
S-82574-Rev. A, 27-Oct-08
a, c
t ≤ 10 s
Steady State
R
thJA
R
thJF
38 50
20 25
°C/W
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New Product
Si4925DDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
V
Drain-Source Breakdown Voltage
V
Temperature Coefficient ΔVDS/T
DS
Temperature Coefficient ΔV
V
GS(th)
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
b
a
a
a
Input Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Tur n - O n D e l ay Time
Rise Time
Turn-Off DelayTime
Fall Ti me
Tur n - O n D e l ay Time
Rise Time
Turn-Off DelayTime
Fall Ti me
V
DS
GS(th)/TJ
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
J
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current I
Pulse Diode Forward Current I
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Reverse Recovery Fall Time t
Reverse Recovery Rise Time t
S
SM
SD
rr
rr
a
b
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
V
DS
V
V
DS
V
DS
I
D
I
D
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
= 0 V, ID = - 250 µA
GS
ID = - 250 µA
V
= VGS, ID = - 250 µA
DS
VDS = 0 V, VGS = ± 20 V
V
= - 30 V, VGS = 0 V
DS
= - 30 V, V
V
≥ - 10 V, V
DS
V
= - 10 V, ID = - 7.3 A
GS
V
= - 4.5 V, ID = - 6.2 A
GS
V
= - 10 V, ID = - 9.1 A
DS
= - 15 V, V
DS
= - 15 V, V
= - 15 V, V
= 0 V, TJ = 55 °C
GS
GS
= 0 V, f = 1 MHz
GS
= - 10 V, ID = - 9.1 A
GS
= - 4.5 V, ID = - 9.1 A
GS
f = 1 MHz 5.8 Ω
V
= - 15 V, RL = 15 Ω
DD
≅ - 1 A, V
V
DD
≅ - 1 A, V
= - 10 V, Rg = 1 Ω
GEN
= - 15 V, RL = 15 Ω
= - 4.5 V, Rg = 1 Ω
GEN
TC = 25 °C - 4.1
IS = - 2 A, V
GS
- 30 V
- 31
4.5
mV/°C
- 1.0 - 3.0 V
± 100 nA
- 1
- 5
µA
= - 10 V - 30 A
0.024 0.029
0.033 0.041
23 S
1350
215
pFOutput Capacitance
185
32 50
15 25
4
nC
7.5
10 15
815
45 70
12 25
42 70
ns
35 60
40 70
16 30
- 32
= 0 V - 0.75 - 1.2 V
34 60 ns
22 40 nC
11
23
ns
Ω
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68969
S-82574-Rev. A, 27-Oct-08
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Si4925DDY
Vishay Siliconix
40
30
20
- Drain Current (A)I
D
10
0
0.0 0.5 1.0 1.5 2.0
V
- Drain-to-Source Voltage (V)
DS
VGS=10thru 5 V
VGS=4V
VGS=3V
Output Characteristics
0.08
0.06
0.04
- On-Resistance (Ω)R
DS(on)
0.02
0.00
010203040
VGS=4.5V
VGS=10V
1.0
0.8
0.6
0.4
- Drain Current (A)I
D
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS- Gate-to-Source Voltage (V)
TC=- 55 °C
TC= 25 °C
TC= 125 °C
Transfer Characteristics
2400
1800
C
iss
1200
C - Capacitance (pF)
600
C
C
rss
0
0 6 12 18 24 30
oss
On-Resistance vs. Drain Current
10
I
=9.1A
D
8
6
VDS=7.5V
4
- Gate-to-Source Voltage (V)
GS
2
V
0
0918 27 36
Document Number: 68969
S-82574-Rev. A, 27-Oct-08
ID- Drain Current (A)
VDS=15V
VDS=22.5V
Qg- Total Gate Charge (nC)
Gate Charge
VDS- Drain-to-Source Voltage (V)
Capacitance
1.8
ID=7.3A
1.5
1.2
- On-ResistanceR
(Normalized)
DS(on)
VGS=10V
0.9
V
=4.5V
GS
0.6
- 50 - 25 0 25 50 75 100 125 150
-Junction Temperature (°C)
T
J
On-Resistance vs. Junction Temperature
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