VISHAY SI4850EY-GE3 Datasheet

Vishay Siliconix

N-Channel Reduced Qg, Fast Switching MOSFET

Si4850EY

PRODUCT SUMMARY

VDS (V) R

0.022 at V

60

0.031 at V

(Ω)I

DS(on)

= 10 V

GS

= 4.5 V

GS

D

(A)

8.5

7.2

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 175 °C Maximum Junction Temperature

®

Power MOSFETs

• Compliant to RoHS Directive 2002/95/EC

D

SO-8

SD

1

SD

2

SD

3

GD

4

Top View

Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free)

Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free)

8

7

6

5

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

J

a

Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

AS

E

AS

P

D

T

, T

J

stg

8.5 6.0

7.1 5.0

3.3 1.7

2.3 1.2

60

± 20

40 15 11 mJ

- 55 to 175 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain)

Notes: a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 71146 S09-1341-Rev. F, 13-Jul-09

t ≤ 10 s

Steady State

R

thJA

R

thJF

36 45

°C/WSteady State 75 90

17 20

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Si4850EY

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -On Delay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

V

DS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 60 V, V

DS

= 60 V, V

V

DS

V

= 10 V, ID = 6.0 A, TJ = 125 °C

GS

V

= 10 V, ID = 6.0 A, TJ = 175 °C

GS

≥ 5 V, V

DS

V

= 10 V, ID = 6.0 A

GS

= 4.5 V, ID = 5.1 A

V

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 15 V, ID = 6.0 A

V

DS

IS = 1.7 A, V

= 30 V, V

= 0 V

GS

= 10 V, ID = 6.0 A

GS

VGS = 0.1 V, f = 5 MHz

= 30 V, RL = 30 Ω

V

DD

≅ 1 A, V

I

D

= 10 V, Rg = 6 Ω

GEN

IF = 1.7 A, dI/dt = 100 A/µs

60

13

V

± 100 nA

1

20

µA

40 A

0.018 0.022

0.031 0.037

0.039 0.047

Ω

0.025 0.031

25 S

0.8 1.2 V

18 27

3.4

nC

5.3

0.5 1.4 2.4 Ω

10 20

25 50

ns

12 24

50 80

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

40

32

24

16

- Drain Current (A)

D

I

8

0

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0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = 10 V thru 5 V

4 V

3 V

VDS - Drain-to-Source Voltage (V)

Output Characteristics

- Drain Current (A)

D

I

40

32

24

16

= 150 °C

T

C

8

25 °C

0

012345

VGS - Gate-to-Source Voltage (V)

- 55 °C

Transfer Characteristics

Document Number: 71146

S09-1341-Rev. F, 13-Jul-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.06

Si4850EY

Vishay Siliconix

1400

- On-Resistance (Ω)

DS(on)

R

- Gate-to-Source Voltage (V)

GS

V

0.05

0.04

VGS = 4.5 V

0.03

V

= 10 V

0.02

0.01

0.00 0 8 16 24 32 40

I

- Drain Current (A)

D

GS

On-Resistance vs. Drain Current

10

ID = 6.0 V

8

6

4

2

VDS = 30 V

1200

C

1000

800

600

400

C - Capacitance (pF)

200

C

rss

0

0 102030405060

2.2 I

D

2.0

1.8

1.6

1.4

- On-Resistance

1.2

DS(on)

R

(Normalized)

1.0

0.

8

iss

C

oss

VDS - Drain-to-Source Voltage (V)

Capacitance

= 6.0 A

VGS = 10 V

0

048 12 16 20

50

10

- Source Current (A)

S

I

1

0.00 0.5 1.0 1.5

Source-Drain Diode Forward Voltage

Document Number: 71146 S09-1341-Rev. F, 13-Jul-09

- Total Gate Charge (nC)

Q

g

Gate Charge

TJ = 175 °C

V

- Source-to-Drain Voltage (V)

SD

TJ = 25 °C

2.0 2.5

0.6

- 50 - 25 0 25 50 75 100 125 150 175

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

0.06

0.05

0.04

ID = 6.0 A

0.03

- On-Resistance (Ω)

0.02

DS(on)

R

0.01

0.00 02468 10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

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Si4850EY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.8 50

0.4

0.0

Variance (V)

GS(th)

V

- 0.4

ID = 250 µA

- 0.8

- 1.2

- 50 - 25 0 25 50 75 100 125 150 175

TJ - Temperature (°C)

Threshold Voltage

2

1

Duty Cycle = 0.5

ecnadepm

evitceffE dez

I

lamr

e hT

i

lam

r o

N tneisnarT

0.2

0.1

0.05

0.02

Single Pulse

0.01

-4

10

-3

10

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

40

)W( rewoP

30

20

10

0

0.01

1

10 10000.1

100

Time (s)

Single Pulse Power

Notes:

P

DM

t

1

t

2

t

thJA

t

thJA

100

1

2

= 75 °C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

-2

10

-1

110 60010

Square Wave Pulse Duration (s)

1

Duty Cycle = 0.5

e cnadepmI lamrehT

evi t

ceffE dezilamroN tneisnarT

0.2

0.1

0.05

0.02

Single Pulse

0.01

-4

10

-3

10

-2

10

-1

11010

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71146

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.

Document Number: 71146

S09-1341-Rev. F, 13-Jul-09

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

Package Information

Vishay Siliconix

D

e

BA

1

DIM

A 1.35 1.75 0.053 0.069

A

1

B 0.35 0.51 0.014 0.020

C 0.19 0.25 0.0075 0.010

D 4.80 5.00 0.189 0.196

E 3.80 4.00 0.150 0.157

e 1.27 BSC 0.050 BSC

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.50 0.93 0.020 0.037

q0°8°0°8°

S 0.44 0.64 0.018 0.026

ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498

8

1

0.25 mm (Gage Plane)

A

6

7

2

5

HE

3

4

S

h x 45

C

L

MILLIMETERS INCHES

Min Max Min Max

0.10 0.20 0.004 0.008

All Leads

q

0.101 mm

0.004"

Document Number: 71192 11-Sep-06

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Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172

(4.369)

0.028

(0.711)

Return to Index

0.022

(0.559)

0.246 (6.248)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.270)

0.152

0.047

(3.861)

(1.194)

APPLICATION NOTE

www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

Legal Disclaimer Notice

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Vishay

Disclaimer



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Revision: 08-Feb-17

1

Document Number: 91000