Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
Si4850EY
PRODUCT SUMMARY
VDS (V) R
0.022 at V
60
0.031 at V
(Ω)I
DS(on)
= 10 V
GS
= 4.5 V
GS
D
(A)
8.5
7.2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
• 175 °C Maximum Junction Temperature
®
Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
D
SO-8
SD
1
SD
2
SD
3
GD
4
Top View
Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free)
Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
= 175 °C)
J
a
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
TA = 25 °C
= 70 °C
T
A
TA = 25 °C
= 70 °C
T
A
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
, T
J
stg
8.5 6.0
7.1 5.0
3.3 1.7
2.3 1.2
60
± 20
40
15
11 mJ
- 55 to 175 °C
V
A
W
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71146
S09-1341-Rev. F, 13-Jul-09
t ≤ 10 s
Steady State
R
thJA
R
thJF
36 45
°C/WSteady State 75 90
17 20
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Si4850EY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
a
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Tur n -On Delay T i m e
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
V
DS
V
GS(th)
I
GSS
I
DSS
I
V
D(on)
R
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
VGS = 0 V, ID = 250 µA
V
= VGS, ID = 250 µA
DS
VDS = 0 V, VGS = ± 20 V
V
= 60 V, V
DS
= 60 V, V
V
DS
V
= 10 V, ID = 6.0 A, TJ = 125 °C
GS
V
= 10 V, ID = 6.0 A, TJ = 175 °C
GS
GS
≥ 5 V, V
DS
V
= 10 V, ID = 6.0 A
GS
= 4.5 V, ID = 5.1 A
V
GS
= 0 V
GS
= 0 V, TJ = 55 °C
= 10 V
GS
VDS = 15 V, ID = 6.0 A
V
DS
IS = 1.7 A, V
= 30 V, V
= 0 V
GS
= 10 V, ID = 6.0 A
GS
VGS = 0.1 V, f = 5 MHz
= 30 V, RL = 30 Ω
V
DD
≅ 1 A, V
I
D
= 10 V, Rg = 6 Ω
GEN
IF = 1.7 A, dI/dt = 100 A/µs
60
13
V
± 100 nA
1
20
µA
40 A
0.018 0.022
0.031 0.037
0.039 0.047
Ω
0.025 0.031
25 S
0.8 1.2 V
18 27
3.4
nC
5.3
0.5 1.4 2.4 Ω
10 20
10 20
25 50
ns
12 24
50 80
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
32
24
16
- Drain Current (A)
D
I
8
0
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0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS = 10 V thru 5 V
4 V
3 V
VDS - Drain-to-Source Voltage (V)
Output Characteristics
- Drain Current (A)
D
I
40
32
24
16
= 150 °C
T
C
8
25 °C
0
012345
VGS - Gate-to-Source Voltage (V)
- 55 °C
Transfer Characteristics
Document Number: 71146
S09-1341-Rev. F, 13-Jul-09
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.06
Si4850EY
Vishay Siliconix
1400
- On-Resistance (Ω)
DS(on)
R
- Gate-to-Source Voltage (V)
GS
V
0.05
0.04
VGS = 4.5 V
0.03
V
= 10 V
0.02
0.01
0.00
0 8 16 24 32 40
I
- Drain Current (A)
D
GS
On-Resistance vs. Drain Current
10
ID = 6.0 V
8
6
4
2
VDS = 30 V
1200
C
1000
800
600
400
C - Capacitance (pF)
200
C
rss
0
0 102030405060
2.2
I
D
2.0
1.8
1.6
1.4
- On-Resistance
1.2
DS(on)
R
(Normalized)
1.0
0.
8
iss
C
oss
VDS - Drain-to-Source Voltage (V)
Capacitance
= 6.0 A
VGS = 10 V
0
048 12 16 20
50
10
- Source Current (A)
S
I
1
0.00 0.5 1.0 1.5
Source-Drain Diode Forward Voltage
Document Number: 71146
S09-1341-Rev. F, 13-Jul-09
- Total Gate Charge (nC)
Q
g
Gate Charge
TJ = 175 °C
V
- Source-to-Drain Voltage (V)
SD
TJ = 25 °C
2.0 2.5
0.6
- 50 - 25 0 25 50 75 100 125 150 175
T
- Junction Temperature (°C)
J
On-Resistance vs. Junction Temperature
0.06
0.05
0.04
ID = 6.0 A
0.03
- On-Resistance (Ω)
0.02
DS(on)
R
0.01
0.00
02468 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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