VISHAY SI4840BDY-GE3 Datasheet

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SO-8 Single

1

S

2

S

3

S

2

3

S

4

G

D
7

D
6

D
5

D
8

N-Channel 40 V (D-S) MOSFET

FEATURES

• TrenchFET® power MOSFET

• 100 % Rg and UIS tested

• Material categorization:
for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

•POL, IBC

- Secondary side

Si4840BDY

Vishay Siliconix

Available

D

PRODUCT SUMMARY

G

VDS (V) 40

max. () at VGS = 10 V 0.009

R

DS(on)

max. () at VGS = 4.5 V 0.012

R

DS(on)

typ. (nC) 15

Q

g

(A) 19

I

D

d

S

N-Channel MOSFET

Configuration Single

ORDERING INFORMATION

Package SO-8
Lead (Pb)-free Si4840BDY-T1-E3
Lead (Pb)-free and halogen-free Si4840BDY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V
Gate-source voltage V

= 25 °C

T

C

= 70 °C 15

T

Continuous drain current (T

= 150 °C)

J

C

= 25 °C 12.4

T

A

TA = 70 °C 9.9
Pulsed drain current I
Avalanche current
Avalanche energy E

Continuous source-drain diode current

Maximum power dissipation

L = 0.1 mH

= 25 °C

T

C

= 25 °C 2.1

T

A

= 25 °C

T

C

= 70 °C 3.8

T

C

= 25 °C 2.5

T

A

I

P

TA = 70 °C 1.6
Operating junction and storage temperature range TJ, T

I

DM

AS

I

DS

GS

D

AS

S

D

stg

40

± 20

19

a, b

a, b

50
15
11 mJ

5

a, b

6

a, b

a, b

W

-55 to +150 °C

V

A

A

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum junction-to-ambient
Maximum junction-to-foot (drain) Steady state R

Notes

a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. Maximum under steady state conditions is 85 °C/W
d. Based on T

S17-1827-Rev. D, 11-Dec-17

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

= 25 °C

C

a, c

t  10 s R

thJA

thJF

37 50
17 21

1

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

°C/W

Document Number: 69795

Si4840BDY

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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

V

temperature coefficient VDS/T

DS

temperature coefficient V

V

GS(th)

Gate-source threshold voltage V

Gate-source leakage I

Zero gate voltage drain current I

On-state drain current

Drain-source on-state resistance

Forward transconductance

Dynamic

b

a

a

a

Input capacitance C

Reverse transfer capacitance C

Total gate charge Q

DS

J

GS(th)/TJ

GS(th)

GSS

DSS

I

V

D(on)

R

DS(on)

g

fs

iss

- 260 -

oss

- 150 -

rss

g

Gate-source charge Qgs -6.7-

Gate-drain charge Q

Gate resistance R

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

gd

g

d(on)

-1220

r

-2540

d(off)

f

d(on)

-1525

r

-3045

d(off)

f

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

Pulse diode forward current I

Body diode voltage V

Body diode reverse recovery time t

Body diode reverse recovery charge Q

Reverse recovery fall time t

Reverse recovery rise time t

S

SM

SD

rr

rr

a

b

Notes

a. Pulse test: pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

V

= 0 V, ID = 250 μA 40 - - V

GS

ID = 250 μA

V

DS

V

DS

V

DS

= 20 V, V

V

DS

VDS = V

V

DS

V

= 40 V, V

V

GS

V

GS

V

DS

= 20 V, V

= 20 V, V

, ID = 250 μA 1 - 3 V

GS

= 0 V, V

= 40 V, V

DS

 5 V, V

DS

= ± 20 V - - ± 100 nA

GS

= 0 V - - 1

GS

= 0 V, TJ = 55 °C - - 5

GS

= 10 V 50 - - A

GS

= 10 V, ID = 12.4 A - 0.0074 0.0090

= 4.5 V, ID = 10.8 A - 0.0095 0.0120

= 15 V, ID = 12.4 A - 56 - S

= 0 V, f = 1 MHz

GS

= 10 V, ID = 12.4 A - 33 50

GS

= 4.5 V, ID = 12.4 A

GS

f = 1 MHz - 1.4 2.1 

= 20 V, RL = 2 

V

DD

I

 10 A, V

D

V

I

 10 A, V

D

= 4.5 V, Rg = 1 

GEN

= 20 V, RL = 2 

DD

= 10 V, Rg = 1 

GEN

TC = 25 °C - - 30

IS = 10 A, V

= 0 V - 0.8 1.2 V

GS

IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C

-40-

--6-

- 2000 -

-1523

-5.1-

-2540

-1015

-1015

-1015

--50

-3060ns

-2652nC

- 17.5 -

- 12.5 -

Vishay Siliconix

mV/°C

μA



pFOutput capacitance C

nC

ns

A

ns

S17-1827-Rev. D, 11-Dec-17

2

Document Number: 69795

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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0

400

800

1200

1600

2000

2400

0 5 10 15 20 25 30 35 40

C

oss

C

iss

VDS - Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

VGS = 10 V

I

D

= 12.4 A

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance (Normalized)

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Si4840BDY

Vishay Siliconix

50

VGS = 10 V thru 4 V

40

30

20

- Drain Current (A)I

D

10

0

0 0.4 0.8 1.2 1.6 2.0

VDS - Drain-to-Source Voltage (V)

Output Characteristics

0.012

0.010

0.008

- On-Resistance (Ω)

VGS = 4.5 V

VGS = 10 V

3 V

2 V

10

8

6

TC = 25 °C

4

- Drain Current (A)I

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

TC = 125 °C

TC = -55 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

DS(on)

0.006

R

0.004
0 1020304050

I

- Drain Current (A)

D

On-Resistance vs. Drain Current and Gate Voltage

10

VDS = 20 V

= 12.4 A

I

D

8

6

4

- Gate-to-Source Voltage (V)

V

GS

2

0

0 5 10 15 20 25 30 35

Qg - Total Gate Charge (nC)

Gate Charge

S17-1827-Rev. D, 11-Dec-17

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

On-Resistance vs. Junction Temperature

3

For technical questions, contact: [e-mail]

Capacitance

Document Number: 69795

VSD - Source-to-Drain Voltage (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 25 °C

60

10

1

- Source Current (A)I

S

TJ = 150 °C

0

30

50

10

20

Power (W)

Time (s)

1 60010

40

0.10.001 1000.01

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.030

0.025

0.020

0.015

- On-Resistance (Ω)R

0.010

DS(on)

0.005

0.000

Source-Drain Diode Forward Voltage

Si4840BDY

Vishay Siliconix

ID = 12.4 A

125 °C

25 °C

0246810

V

- Gate-to-Source Voltage (V)

GS

On-Resistance vs. Gate-to-Source Voltage

2.4

2.2

2.0

(V)V

1.8

GS(th)

1.6

1.4

1.2

1.0

-50 -25 0 25 50 75 100 125 150

ID = 250 µA

TJ - Temperature (°C)

Threshold Voltage

100

10

1

Limited by R

DS(on)

Single Pulse Power (Junction-to-Ambient)

(1)

100 µs

1ms

10 ms

S17-1827-Rev. D, 11-Dec-17

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

- Drain Current (A)I

D

0.1

TA= 25 °C

Single pulse

0.01

0.1 1 10 100
VDS- Drain-to-Source Voltage (V)

(1)

VGS> minimum VGSat which R

BVDSS
limited

DS(on)

100 ms

1s
10 s

DC

is specified

Safe Operating Area, Junction-to-Ambient

4

For technical questions, contact: [e-mail]

Document Number: 69795

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Si4840BDY

Vishay Siliconix

25

20

15

10

- Drain Current (A)

D

I

5

0

0 25 50 75 100 125 150

TC- Case Temperature (°C)

Current Derating

a

6

5

4

3

2

Power Dissipation (W)

1

0

25 50 75 100 125 150

TC - Case Temperature (°C)

Power Derating

Note

a. The power dissipation P

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the

is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

D

package limit.

S17-1827-Rev. D, 11-Dec-17

5

Document Number: 69795

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

10

-3

10

-2

1010

-1

10

-4

2

0.1

0.01

0.2

0.1

0.05

0.02

Single pulse

Duty cycle = 0.5

Square Wave Pulse Duration (s)

Normalized Effective Transient

Thermal Impedance

1

1

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

2

1

Duty cycle = 0.5

Si4840BDY

Vishay Siliconix

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

0.2

0.1

0.05

0.02

Single pulse

-4

-3

10

-2

10

Square Wave Pulse Duration (s)

-1

1 10 60010

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

t

1

t

- TA = PDMZ

JM

2

1. Duty cycle, D =

2. Per unit base = R

3. T

4. Surface mounted

t

1

t

2

= 68 °C/W

thJA

(t)

thJA

100

Normalized Thermal Transient Impedance, Junction-to-Foot

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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69795

S17-1827-Rev. D, 11-Dec-17

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

.

6

For technical questions, contact: [e-mail]

Document Number: 69795

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

Package Information

Vishay Siliconix

D

e

BA

1

DIM

A 1.35 1.75 0.053 0.069

A

1

B 0.35 0.51 0.014 0.020

C 0.19 0.25 0.0075 0.010

D 4.80 5.00 0.189 0.196

E 3.80 4.00 0.150 0.157

e 1.27 BSC 0.050 BSC

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.50 0.93 0.020 0.037

q0°8°0°8°

S 0.44 0.64 0.018 0.026

ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

8

1

0.25 mm (Gage Plane)

A

6

7

2

5

HE

3

4

S

h x 45

C

L

MILLIMETERS INCHES

Min Max Min Max

0.10 0.20 0.004 0.008

All Leads

q

0.101 mm

0.004"

Document Number: 71192
11-Sep-06

www.vishay.com

1

Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172

(4.369)

0.028

(0.711)

Return to Index

Return to Index

0.022

(0.559)

0.246
(6.248)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.270)

0.152

0.047

(3.861)

(1.194)

APPLICATION NOTE

www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08

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Disclaimer

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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17

1

Document Number: 91000