VISHAY SI4840BDY-GE3 Datasheet
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SO-8 Single
1
S
2
S
3
S
2
3
S
4
G
D
7
D
6
D
5
D
8
N-Channel 40 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
•POL, IBC
- Secondary side
Si4840BDY
Vishay Siliconix
Available
D
PRODUCT SUMMARY
G
VDS (V) 40
max. () at VGS = 10 V 0.009
R
DS(on)
max. () at VGS = 4.5 V 0.012
R
DS(on)
typ. (nC) 15
Q
g
(A) 19
I
D
d
S
N-Channel MOSFET
Configuration Single
ORDERING INFORMATION
Package SO-8
Lead (Pb)-free Si4840BDY-T1-E3
Lead (Pb)-free and halogen-free Si4840BDY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
Gate-source voltage V
= 25 °C
T
C
= 70 °C 15
T
Continuous drain current (T
= 150 °C)
J
C
= 25 °C 12.4
T
A
TA = 70 °C 9.9
Pulsed drain current I
Avalanche current
Avalanche energy E
Continuous source-drain diode current
Maximum power dissipation
L = 0.1 mH
= 25 °C
T
C
= 25 °C 2.1
T
A
= 25 °C
T
C
= 70 °C 3.8
T
C
= 25 °C 2.5
T
A
I
P
TA = 70 °C 1.6
Operating junction and storage temperature range TJ, T
I
DM
AS
I
DS
GS
D
AS
S
D
stg
40
± 20
19
a, b
a, b
50
15
11 mJ
5
a, b
6
a, b
a, b
W
-55 to +150 °C
V
A
A
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
Maximum junction-to-foot (drain) Steady state R
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. Maximum under steady state conditions is 85 °C/W
d. Based on T
S17-1827-Rev. D, 11-Dec-17
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
= 25 °C
C
a, c
t 10 s R
thJA
thJF
37 50
17 21
1
For technical questions, contact: pmostechsupport@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
°C/W
Document Number: 69795
Si4840BDY
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
V
temperature coefficient VDS/T
DS
temperature coefficient V
V
GS(th)
Gate-source threshold voltage V
Gate-source leakage I
Zero gate voltage drain current I
On-state drain current
Drain-source on-state resistance
Forward transconductance
Dynamic
b
a
a
a
Input capacitance C
Reverse transfer capacitance C
Total gate charge Q
DS
J
GS(th)/TJ
GS(th)
GSS
DSS
I
V
D(on)
R
DS(on)
g
fs
iss
- 260 -
oss
- 150 -
rss
g
Gate-source charge Qgs -6.7-
Gate-drain charge Q
Gate resistance R
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
gd
g
d(on)
-1220
r
-2540
d(off)
f
d(on)
-1525
r
-3045
d(off)
f
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
Pulse diode forward current I
Body diode voltage V
Body diode reverse recovery time t
Body diode reverse recovery charge Q
Reverse recovery fall time t
Reverse recovery rise time t
S
SM
SD
rr
rr
a
b
Notes
a. Pulse test: pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
V
= 0 V, ID = 250 μA 40 - - V
GS
ID = 250 μA
V
DS
V
DS
V
DS
= 20 V, V
V
DS
VDS = V
V
DS
V
= 40 V, V
V
GS
V
GS
V
DS
= 20 V, V
= 20 V, V
, ID = 250 μA 1 - 3 V
GS
= 0 V, V
= 40 V, V
DS
5 V, V
DS
= ± 20 V - - ± 100 nA
GS
= 0 V - - 1
GS
= 0 V, TJ = 55 °C - - 5
GS
= 10 V 50 - - A
GS
= 10 V, ID = 12.4 A - 0.0074 0.0090
= 4.5 V, ID = 10.8 A - 0.0095 0.0120
= 15 V, ID = 12.4 A - 56 - S
= 0 V, f = 1 MHz
GS
= 10 V, ID = 12.4 A - 33 50
GS
= 4.5 V, ID = 12.4 A
GS
f = 1 MHz - 1.4 2.1
= 20 V, RL = 2
V
DD
I
10 A, V
D
V
I
10 A, V
D
= 4.5 V, Rg = 1
GEN
= 20 V, RL = 2
DD
= 10 V, Rg = 1
GEN
TC = 25 °C - - 30
IS = 10 A, V
= 0 V - 0.8 1.2 V
GS
IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C
-40-
--6-
- 2000 -
-1523
-5.1-
-2540
-1015
-1015
-1015
--50
-3060ns
-2652nC
- 17.5 -
- 12.5 -
Vishay Siliconix
mV/°C
μA
pFOutput capacitance C
nC
ns
A
ns
S17-1827-Rev. D, 11-Dec-17
2
Document Number: 69795
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
0
400
800
1200
1600
2000
2400
0 5 10 15 20 25 30 35 40
C
oss
C
iss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
VGS = 10 V
I
D
= 12.4 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance (Normalized)
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si4840BDY
Vishay Siliconix
50
VGS = 10 V thru 4 V
40
30
20
- Drain Current (A)I
D
10
0
0 0.4 0.8 1.2 1.6 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.012
0.010
0.008
- On-Resistance (Ω)
VGS = 4.5 V
VGS = 10 V
3 V
2 V
10
8
6
TC = 25 °C
4
- Drain Current (A)I
D
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
TC = 125 °C
TC = -55 °C
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
DS(on)
0.006
R
0.004
0 1020304050
I
- Drain Current (A)
D
On-Resistance vs. Drain Current and Gate Voltage
10
VDS = 20 V
= 12.4 A
I
D
8
6
4
- Gate-to-Source Voltage (V)
V
GS
2
0
0 5 10 15 20 25 30 35
Qg - Total Gate Charge (nC)
Gate Charge
S17-1827-Rev. D, 11-Dec-17
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
On-Resistance vs. Junction Temperature
3
For technical questions, contact: pmostechsupport@vishay.com
Capacitance
Document Number: 69795
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