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SI4532CDY-GE3
Datasheet
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VISHAY SI4532CDY-GE3 Datasheet

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Page 1
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1
D
1
G
1
D
1
S
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2
D
2
SO-8
5
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Top View
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1
Ordering Information: Si4532CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
D
1
G
1
S
1
S
2
G
2
D
2
P-Channel MOSFET
Si4532CDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) R
N-Channel 30
P-Channel - 30
DS(on)
0.047 at V
0.065 at V
0.089 at V
0.140 at V
()I
= 10 V 6.0
GS
= 4.5 V 5.2
GS
= - 10 V - 4.3
GS
= - 4.5 V - 3.4
GS
(A)aQg (Typ.)
D
2.75
4.1
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Tested
g
APPLICATIONS
• DC/DC Converter
• Load Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
= 150 °C)
J
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
= 25 °C
T
C
= 70 °C
T
C
T
= 25 °C
A
TA = 70 °C
= 25 °C
T
C
= 25 °C
T
A
L = 0.1 mH
= 25 °C
T
C
= 70 °C
T
C
T
= 25 °C
A
TA = 70 °C
V
DS
V
GS
I
D
I
DM
I
S
I
SM
I
AS
E
AS
P
D
, T
T
J
stg
30 - 30
± 20
6.0 - 4.3
4.9 - 3.4
4.9
3.9
b, c
b, c
- 3.4
- 2.7
b, c
b, c
24 - 15
2.3 - 2.3
1.5
b, c
- 1.5
b, c
24 - 12
78
2.5 3.2 mJ
2.78 2.78
1.78 1.78
1.78
1.14
b, c
b, c
1.78
1.14
b, c
b, c
- 55 to 150 °C
V
A
W
THERMAL RESISTANCE RATINGS
Parameter Symbol
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State
Notes:
a. Based on T b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
Document Number: 64805 S11-0652-Rev. B, 11-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
= 25 °C.
C
b, d
This document is subject to change without notice.
t 10 s
N-Channel P-Channel
Typ. Max. Typ. Max.
R
thJA
R
thJF
57 70 57 70
37 45 37 45
Unit
°C/W
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1
Page 2
Si4532CDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ.aMax. Unit
Static
Drain-Source Breakdown Voltage
V
Temperature Coefficient VDS/T
DS
V
Temperature Coefficient V
GS(th)
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
a
b
b
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS
GS(th)/TJ
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
J
VGS = 0 V, ID = 250 µA
V
= 0 V, ID = - 250 µA
GS
ID = 250 µA
I
= - 250 µA
D
ID = 250 µA
II
= - 250 µA
D
V
= VGS, ID = 250 µA
DS
V
= VGS, ID = - 250 µA
DS
VDS = 0 V, VGS = ± 20 V
V
= 30 V, V
DS
V
= - 30 V, V
DS
V
= 30 V, V
DS
V
= - 30 V, V
DS
=5 V, V
V
DS
V
= -5 V, V
DS
V
= 10 V, ID = 3.5 A
GS
V
= - 10 V, ID = - 3.5 A
GS
V
= 4.5 V, ID = 2.8 A
GS
V
= - 4.5 V, ID = - 2.5 A
GS
VDS = 15 V, ID = 2.5 A
V
= - 15 V, ID = - 3.5 A
DS
N-Channel
V
= 15 V, V
DS
P-Channel
V
= - 15 V, V
DS
VDS = 15 V, V
V
= - 15 V, V
DS
GS
N-Channel
V
= 15 V, V
DS
GS
P-Channel
V
= - 15 V, V
DS
GS
f = 1 MHz
= 0 V
GS
= 0 V
GS
= 0 V, TJ = 55 °C
GS
= 0 V, TJ = 55 °C
GS
= 10 V
GS
= - 10 V
GS
= 0 V, f = 1 MHz
GS
= 0 V, f = 1 MHz
GS
= 10 V, ID = 2.5 A
GS
= - 10 V, ID = - 2.5 A
= 4.5 V ID = 2.5 A
= - 4.5 V, ID = - 2.5 A
N-Ch 30
P-Ch - 30
N-Ch 33
P-Ch - 33
N-Ch - 5.8
P-Ch 4.5
N-Ch 1.0 3.0
P-Ch - 1.0 - 3.0
N-Ch 100
P-Ch - 100
N-Ch 1
P-Ch - 1
N-Ch 5
P-Ch - 5
N-Ch 20
P-Ch - 12
N-Ch 0.038 0.047
P-Ch 0.073 0.089
N-Ch 0.052 0.065
P-Ch 0.113 0.140
N-Ch 7
P-Ch 7
N-Ch 305
P-Ch 340
N-Ch 65
P-Ch 67
N-Ch 29
P-Ch 51
N-Ch 6 9
P-Ch 7.8 12
N-Ch 2.75 4.5
P-Ch 4.1 6.2
N-Ch 1.3
P-Ch 1.3
N-Ch 0.9
P-Ch 1.8
N-Ch 0.6 3.1 6.2
P-Ch 2.0 10 20
V
mV/°C
V
nA
µA
A
S
pF
nC
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
This document is subject to change without notice.
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
Page 3
Si4532CDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ.aMax. Unit
Dynamic
Tu r n - O n D e la y Ti m e
Rise Time
Turn-Off Delay Time
Fall Time
Tu r n - O n D e la y Ti m e
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes:
a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
a
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
a
I
SM
V
SD
t
rr
I
D
- 1 A, V
I
D
I
1 A, V
D
- 1 A, V
I
D
N-Channel
V
= 15 V, RL = 15
DD
1 A, V
GEN
P-Channel
V
= - 15 V, RL = 15
DD
GEN
N-Channel
V
= 15 V, RL = 15
DD
GEN
P-Channel
V
= - 15 V, RL = 15
DD
GEN
TC = 25 °C
IS = 1.25 A
I
= - 0.75 A
S
= 10 V, Rg = 1
= - 10 V, Rg = 1
= 4.5 V, Rg = 1
= - 4.5 V, Rg = 1
N-Channel
Q
I
= 1.25 A, dI/dt = 100 A/µs, TJ = 25 °C
rr
F
t
a
I
= - 2.5 A, dI/dt = - 100 A/µs, TJ = 25 °C
F
t
b
P-Channel
N-Ch 7 11
P-Ch 5.5 10
N-Ch 12 18
P-Ch 13 25
N-Ch 14 25
P-Ch 17 30
N-Ch 6 10
P-Ch 7.7 15
N-Ch 16 30
P-Ch 40 60
N-Ch 16 30
P-Ch 40 60
N-Ch 9 18
P-Ch 20 40
N-Ch 9 18
P-Ch 17 30
N-Ch 2.3
P-Ch - 2.3
N-Ch 24
P-Ch - 12
N-Ch 0.8 1.2
P-Ch - 0.8 - 1.2
N-Ch 14 21
P-Ch 17 30
N-Ch 6 10
P-Ch 11 20
N-Ch 9
P-Ch 12
N-Ch 5
P-Ch 5
ns
A
V
ns
nC
ns
Document Number: 64805 S11-0652-Rev. B, 11-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
This document is subject to change without notice.
www.vishay.com
3
Page 4
Si4532CDY
0
6
12
18
24
02468 10
VGS=10V thru 6 V
VGS=4V
VGS=5V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
- On-Resistance ()R
DS(on)
0.00
0.02
0.04
0.06
0.08
0.10
0 2 4 6 8 10 12 14 16
ID - Drain Current (A)
VGS = 4.5 V
VGS = 10 V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
012345
TC= 25 °C
TC= 125 °C
TC= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0.7
0.9
1.1
1.3
1.5
1.7
- 50 - 25 0 25 50 75 100 125 150
ID=6A
VGS=4.5V
VGS=10V
T
J
-Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
10
=2.5A
I
D
8
6
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
- Gate-to-Source Voltage (V)
GS
2
V
0
0246
Qg- Total Gate Charge (nC)
VDS=7.5V
VDS=15V
Gate Charge
400
350
300
250
200
150
C - Capacitance (pF)
100
VDS=22.5V
This document is subject to change without notice.
Transfer Characteristics
C
iss
C
C
rss
50
0
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
oss
Capacitance
On-Resistance vs. Junction Temperature
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
Page 5
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 150 °C
TJ = 25 °C
10
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.25
0.20
0.15
0.10
- On-Resistance (Ω)
DS(on)
R
0.05
0.00 012345678 910
Source-Drain Diode Forward Voltage
VGS- Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Si4532CDY
Vishay Siliconix
TJ= 125 °C
TJ=25 °C
0.4
0.2
ID = 250 µA
0.0
- 0.2
Variance (V)V
GS(th)
- 0.4
- 0.6
- 0.8
- 50 - 25 0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited byR
10
1
I
- Drain Current (A)
D
TA= 25 °C
Single Pulse
0.1
0.01
0.1 1 10 100
V
* V
> minimum VGSat which R
GS
Safe Operating Area, Junction-to-Ambient
*
DS(on)
BVDSS Limited
- Drain-to-Source Voltage (V)
DS
50
40
30
Power (W)
20
10
0
0.1
Time (s )
011100.00.01
Single Pulse Power, Junction-to-Ambient
10 µs 100 µs
1ms
10 ms
100 ms
1s 10 s 100 s, DC
is specified
DS(on)
Document Number: 64805 S11-0652-Rev. B, 11-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
This document is subject to change without notice.
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Page 6
Si4532CDY
0.0
0.7
1.4
2.1
2.8
3.5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
6
Package Limited
4
- Drain Current (A)
D
I
2
0
0 25 50 75 100 125 150
- Case Temperature (°C)
T
C
Current Derating*
1.5
1.2
0.9
Power (W)
0.6
0.3
0.0 0 25 50 75 100 125 150
T
-Ambient Temperature (°C)
A
Power Derating, Junction-to-Foot
* The power dissipation PD is based on T
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
J(max)
Power Derating, Junction-to-Ambient
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
This document is subject to change without notice.
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
Page 7
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 120 °C/W
3. T
JM-TA=PDMZthJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Si4532CDY
Vishay Siliconix
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 64805 S11-0652-Rev. B, 11-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
This document is subject to change without notice.
www.vishay.com
7
Page 8
Si4532CDY
VDS- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
VGS=5V
0
3
6
9
12
15
0.0 0.5 1.0 1.5 2.0
VGS=10V thru 6 V
VGS=4V
VGS=3V
ID=2.5A
0
2
4
6
8
10
02468
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
V
GS
VDS=22.5V
VDS=7.5V
VDS=15V
0.0
0.5
1.0
1.5
2.0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
TC= 25 °C
TC= 125 °C
TC= - 55 °C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
VGS=10V
VGS=4.5V
ID=3.2A
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
0.20
0.15
VGS=4.5V
0.10
- On-Resistance (Ω)R
DS(on)
0.05
0.00
VGS=10V
0 3 6 9 12 15
ID- Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Transfer Characteristics
600
450
C
iss
300
C - Capacitance (pF)
150
0
C
oss
C
rss
0 6 12 18 24 30
VDS- Drain-to-Source Voltage (V)
Capacitance
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Gate Charge
This document is subject to change without notice.
On-Resistance vs. Junction Temperature
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
Page 9
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.0 0.3 0.6 0.9 1.2 1.5
10
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.1
1
0.01
TJ= 150 °C
0.001
TJ= - 50 °C
TJ= 25 °C
-0.4
-0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
Variance (V)V
GS(th)
TJ- Temperature (°C)
ID=1mA
0.0
0.1
0.2
0.3
0.4
02468 10
- On-Resistance (Ω)R
DS(on)
VGS- Gate-to-Source Voltage (V)
TJ= 25 °C
TJ= 125 °C
ID= 3.5 A
Si4532CDY
Vishay Siliconix
Source-Drain Diode Forward Voltage
Threshold Voltage
100
Limited byR
10
DS(on)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
Power (W)
20
10
0
0.1
Time (s )
011100.0 0.01
Single Pulse Power, Junction-to-Ambient
*
10 µs
100 µs
Document Number: 64805 S11-0652-Rev. B, 11-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
- Drain Current (A)
D
I
TA= 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.1 1 10 100
* V
GS
- Drain-to-Source Voltage (V)
V
DS
> minimum VGSat which R
DS(on)
Safe Operating Area, Junction-to-Ambient
This document is subject to change without notice.
1ms
10 ms
100 ms
1s 10 s 100 s, DC
is specified
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Page 10
Si4532CDY
0
1
2
3
4
5
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating*
3.5
2.8
2.1
Power (W)
1.4
0.7
0.0 0 25 50 75 100 125 150
T
Power Derating, Junction-to-Foot
* The power dissipation PD is based on T
- Case Temperature (°C)
C
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
1.5
1.2
0.9
Power (W)
0.6
0.3
0.0 0 25 50 75 100 125 150
T
-Ambient Temperature (°C)
A
Power Derating, Junction-to-Ambient
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
This document is subject to change without notice.
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
Page 11
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 110 °C/W
3. T
JM-TA=PDMZthJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Si4532CDY
Vishay Siliconix
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64805
Document Number: 64805 S11-0652-Rev. B, 11-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
.
This document is subject to change without notice.
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11
Page 12
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
Package Information
Vishay Siliconix
D
e
BA
1
DIM
A 1.35 1.75 0.053 0.069
A
1
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498
8
1
0.25 mm (Gage Plane)
A
6
7
2
5
HE
3
4
S
h x 45
C
L
MILLIMETERS INCHES
Min Max Min Max
0.10 0.20 0.004 0.008
All Leads
q
0.101 mm
0.004"
Document Number: 71192 11-Sep-06
www.vishay.com
1
Page 13
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
Return to Index
Return to Index
0.022
(0.559)
0.246 (6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.050
(1.270)
0.152
0.047
(3.861)
(1.194)
APPLICATION NOTE
www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08
Page 14
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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