VISHAY SI4532CDY-GE3 Datasheet

N- and P-Channel 30 V (D-S) MOSFET

S

1

D

1

G

1

D

1

S

2

D

2

G

2

D

2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4532CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

D

1

G

1

S

1

S

2

G

2

D

2

P-Channel MOSFET

Si4532CDY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

N-Channel 30

P-Channel - 30

DS(on)

0.047 at V

0.065 at V

0.089 at V

0.140 at V

()I

= 10 V 6.0

GS

= 4.5 V 5.2

GS

= - 10 V - 4.3

GS

= - 4.5 V - 3.4

GS

(A)aQg (Typ.)

D

2.75

4.1

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• TrenchFET® Power MOSFET

• 100 % R

• 100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

Tested

g

APPLICATIONS

• DC/DC Converter

• Load Switch

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol N-Channel P-Channel Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current (10 µs Pulse Width)

Source-Drain Current Diode Current

Pulsed Source-Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

= 25 °C

T

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

= 25 °C

T

C

= 25 °C

T

A

L = 0.1 mH

= 25 °C

T

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

I

SM

I

AS

E

AS

P

D

, T

T

J

stg

30 - 30

± 20

6.0 - 4.3

4.9 - 3.4

4.9

3.9

b, c

b, c

- 3.4

- 2.7

b, c

b, c

24 - 15

2.3 - 2.3

1.5

b, c

- 1.5

b, c

24 - 12

78

2.5 3.2 mJ

2.78 2.78

1.78 1.78

1.78

1.14

b, c

b, c

1.78

1.14

b, c

b, c

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State

Notes:

a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).

Document Number: 64805
S11-0652-Rev. B, 11-Apr-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

= 25 °C.

C

b, d

This document is subject to change without notice.

t  10 s

N-Channel P-Channel

Typ. Max. Typ. Max.

R

thJA

R

thJF

57 70 57 70

37 45 37 45

Unit

°C/W

www.vishay.com

1

Si4532CDY

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ.aMax. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient VDS/T

DS

V

Temperature Coefficient V

GS(th)

Gate-Source Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

a

b

b

b

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

V

DS

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

J

VGS = 0 V, ID = 250 µA

V

= 0 V, ID = - 250 µA

GS

ID = 250 µA

I

= - 250 µA

D

ID = 250 µA

II

= - 250 µA

D

V

= VGS, ID = 250 µA

DS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 30 V, V

DS

V

= - 30 V, V

DS

V

= 30 V, V

DS

V

= - 30 V, V

DS

=5 V, V

V

DS

V

= -5 V, V

DS

V

= 10 V, ID = 3.5 A

GS

V

= - 10 V, ID = - 3.5 A

GS

V

= 4.5 V, ID = 2.8 A

GS

V

= - 4.5 V, ID = - 2.5 A

GS

VDS = 15 V, ID = 2.5 A

V

= - 15 V, ID = - 3.5 A

DS

N-Channel

V

= 15 V, V

DS

P-Channel

V

= - 15 V, V

DS

VDS = 15 V, V

V

= - 15 V, V

DS

GS

N-Channel

V

= 15 V, V

DS

GS

P-Channel

V

= - 15 V, V

DS

GS

f = 1 MHz

= 0 V

GS

= 0 V

GS

= 0 V, TJ = 55 °C

GS

= 0 V, TJ = 55 °C

GS

= 10 V

GS

= - 10 V

GS

= 0 V, f = 1 MHz

GS

= 0 V, f = 1 MHz

GS

= 10 V, ID = 2.5 A

GS

= - 10 V, ID = - 2.5 A

= 4.5 V ID = 2.5 A

= - 4.5 V, ID = - 2.5 A

N-Ch 30

P-Ch - 30

N-Ch 33

P-Ch - 33

N-Ch - 5.8

P-Ch 4.5

N-Ch 1.0 3.0

P-Ch - 1.0 - 3.0

N-Ch 100

P-Ch - 100

N-Ch 1

P-Ch - 1

N-Ch 5

P-Ch - 5

N-Ch 20

P-Ch - 12

N-Ch 0.038 0.047

P-Ch 0.073 0.089

N-Ch 0.052 0.065

P-Ch 0.113 0.140

N-Ch 7

P-Ch 7

N-Ch 305

P-Ch 340

N-Ch 65

P-Ch 67

N-Ch 29

P-Ch 51

N-Ch 6 9

P-Ch 7.8 12

N-Ch 2.75 4.5

P-Ch 4.1 6.2

N-Ch 1.3

P-Ch 1.3

N-Ch 0.9

P-Ch 1.8

N-Ch 0.6 3.1 6.2

P-Ch 2.0 10 20

V

mV/°C

V

nA

µA

A



S

pF

nC



www.vishay.com
2

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

Document Number: 64805

S11-0652-Rev. B, 11-Apr-11

Si4532CDY

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ.aMax. Unit

Dynamic

Tu r n - O n D e la y Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tu r n - O n D e la y Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode
Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes:

a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

a

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

I

S

a

I

SM

V

SD

t

rr

I

D

 - 1 A, V

I

D

I

 1 A, V

D

 - 1 A, V

I

D

N-Channel

V

= 15 V, RL = 15 

DD

 1 A, V

GEN

P-Channel

V

= - 15 V, RL = 15 

DD

GEN

N-Channel

V

= 15 V, RL = 15 

DD

GEN

P-Channel

V

= - 15 V, RL = 15 

DD

GEN

TC = 25 °C

IS = 1.25 A

I

= - 0.75 A

S

= 10 V, Rg = 1 

= - 10 V, Rg = 1 

= 4.5 V, Rg = 1 

= - 4.5 V, Rg = 1 

N-Channel

Q

I

= 1.25 A, dI/dt = 100 A/µs, TJ = 25 °C

rr

F

t

a

I

= - 2.5 A, dI/dt = - 100 A/µs, TJ = 25 °C

F

t

b

P-Channel

N-Ch 7 11

P-Ch 5.5 10

N-Ch 12 18

P-Ch 13 25

N-Ch 14 25

P-Ch 17 30

N-Ch 6 10

P-Ch 7.7 15

N-Ch 16 30

P-Ch 40 60

N-Ch 16 30

P-Ch 40 60

N-Ch 9 18

P-Ch 20 40

N-Ch 9 18

P-Ch 17 30

N-Ch 2.3

P-Ch - 2.3

N-Ch 24

P-Ch - 12

N-Ch 0.8 1.2

P-Ch - 0.8 - 1.2

N-Ch 14 21

P-Ch 17 30

N-Ch 6 10

P-Ch 11 20

N-Ch 9

P-Ch 12

N-Ch 5

P-Ch 5

ns

A

V

ns

nC

ns

Document Number: 64805
S11-0652-Rev. B, 11-Apr-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

www.vishay.com

3

Si4532CDY

0

6

12

18

24

02468 10

VGS=10V thru 6 V

VGS=4V

VGS=5V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

- On-Resistance ()R

DS(on)

0.00

0.02

0.04

0.06

0.08

0.10

0 2 4 6 8 10 12 14 16

ID - Drain Current (A)

VGS = 4.5 V

VGS = 10 V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

012345

TC= 25 °C

TC= 125 °C

TC= - 55 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

0.7

0.9

1.1

1.3

1.5

1.7

- 50 - 25 0 25 50 75 100 125 150

ID=6A

VGS=4.5V

VGS=10V

T

J

-Junction Temperature (°C)

(Normalized)

- On-ResistanceR

DS(on)

Vishay Siliconix

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

10

=2.5A

I

D

8

6

www.vishay.com
4

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0246

Qg- Total Gate Charge (nC)

VDS=7.5V

VDS=15V

Gate Charge

400

350

300

250

200

150

C - Capacitance (pF)

100

VDS=22.5V

This document is subject to change without notice.

Transfer Characteristics

C

iss

C

C

rss

50

0

0 5 10 15 20 25 30

VDS - Drain-to-Source Voltage (V)

oss

Capacitance

On-Resistance vs. Junction Temperature

Document Number: 64805

S11-0652-Rev. B, 11-Apr-11

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 °C

TJ = 25 °C

10

0.1

V

SD

- Source-to-Drain Voltage (V)

- Source Current (A)I

S

1

0.25

0.20

0.15

0.10

- On-Resistance (Ω)

DS(on)

R

0.05

0.00
012345678 910

Source-Drain Diode Forward Voltage

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

Si4532CDY

Vishay Siliconix

TJ= 125 °C

TJ=25 °C

0.4

0.2

ID = 250 µA

0.0

- 0.2

Variance (V)V

GS(th)

- 0.4

- 0.6

- 0.8

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

100

Limited byR

10

1

I

- Drain Current (A)

D

TA= 25 °C

Single Pulse

0.1

0.01

0.1 1 10 100

V

* V

> minimum VGSat which R

GS

Safe Operating Area, Junction-to-Ambient

*

DS(on)

BVDSS Limited

- Drain-to-Source Voltage (V)

DS

50

40

30

Power (W)

20

10

0

0.1

Time (s )

011100.00.01

Single Pulse Power, Junction-to-Ambient

10 µs
100 µs

1ms

10 ms

100 ms

1s
10 s
100 s, DC

is specified

DS(on)

Document Number: 64805
S11-0652-Rev. B, 11-Apr-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

www.vishay.com

5