VISHAY SI4435DDY-GE3 Datasheet

New Product

P-Channel 30-V (D-S) MOSFET

Si4435DDY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 30

0.024 at V

0.035 at V

(Ω)

DS(on)

= - 10 V - 11.4

GS

= - 4.5 V - 9.4

GS

d

I

(A)

D

Qg (Typ.)

15 nC

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

FEATURES

• Load Switches

• Battery Switch

SO-8

S

1

S

2

S

3

G

4

Top View

Ordering Information: Si4435DDY-T1-E3 (Lead (Pb)-free)

Si4435DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

8

D

7

6

D

5

G

S

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

Continuous Source-Drain Diode Current

Avalanche Current

Single-Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T

= 25 °C

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

T

= 25 °C

C

T

= 25 °C

A

L = 0.1 mH

T

= 25 °C

C

T

= 70 °C 3.2

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

- 30

± 20

V

- 11.4

I

D

I

DM

I

S

I

AS

E

AS

- 9.1

a, b

- 8.1

a, b

- 6.5

- 50

- 4.1

a, b

- 2.0

- 20

20 mJ

A

5.0

P

D

, T

T

J

stg

a, b

2.5

a, b

1.6

- 55 to 150 °C

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot

Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on T

= 25 °C.

C

Document Number: 68841 S09-0863-Rev. C, 18-May-09

a, c

t ≤ 10 s

Steady State

R

thJA

R

thJF

38 50

20 25

°C/W

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1

New Product

Si4435DDY

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/T

DS

Temperature Coefficient ΔV

V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off DelayTime

Fall Ti me

Tur n - O n D e l ay Time

Rise Time

Turn-Off DelayTime

Fall Ti me

V

DS

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

J

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current I

Pulse Diode Forward Current I

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Fall Time t

Reverse Recovery Rise Time t

S

SM

SD

rr

a

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

I

D

I

D

IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = - 250 µA

GS

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 30 V, VGS = 0 V

DS

= - 30 V, V

V

≥ - 10 V, V

DS

V

= - 10 V, ID = - 9.1 A

GS

V

= - 4.5 V, ID = - 6.9 A

GS

V

= - 10 V, ID = - 9.1 A

DS

= - 15 V, V

DS

= - 15 V, V

= 0 V, TJ = 55 °C

GS

= 0 V, f = 1 MHz

GS

= - 10 V, ID = - 9.1 A

GS

= - 4.5 V, ID = - 9.1 A

GS

f = 1 MHz 5.8 Ω

V

= - 15 V, RL = 15 Ω

DD

≅ - 1 A, V

V

DD

≅ - 1 A, V

= - 10 V, Rg = 1 Ω

GEN

= - 15 V, RL = 15 Ω

= - 4.5 V, Rg = 1 Ω

GEN

TC = 25 °C - 4.1

IS = - 2 A, V

GS

- 30 V

- 31

4.5

mV/°C

- 1.0 - 3.0 V

± 100 nA

- 1

- 5

= - 10 V - 30 A

0.0195 0.024

0.028 0.035

23 S

1350

215

185

32 50

15 25

4

7.5

10 15

815

45 70

12 25

42 70

35 60

40 70

16 30

- 50

= 0 V - 0.75 - 1.2 V

34 60 ns

22 40 nC

11

23

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 68841

S09-0863-Rev. C, 18-May-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si4435DDY

Vishay Siliconix

50

VGS=10V thru 5 V

40

30

20

- Drain Current (A)I

D

10

0

0.0 0.5 1.0 1.5 2.0

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.05

0.04

VGS=4.5V

0.03

- On-Resistance (Ω)R

0.02

DS(on)

0.01

0

0 1020304050

ID- Drain Current (A)

VGS=10V

On-Resistance vs. Drain Current

V

=4V

GS

VGS=3V

1.0

0.8

0.6

0.4

- Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS- Gate-to-Source Voltage (V)

TC= - 55 °C

TC= 25 °C

TC= 125 °C

Transfer Characteristics

2400

1800

C

iss

1200

C - Capacitance (pF)

600

C

rss

0

0 6 12 18 24 30

oss

VDS- Drain-to-Source Voltage (V)

Capacitance

10

I

=9.1A

D

8

6

VDS=7.5V

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0918 27 36

Document Number: 68841 S09-0863-Rev. C, 18-May-09

VDS=15V

VDS=22.5V

Qg- Total Gate Charge (nC)

Gate Charge

1.8

ID=9.1A

1.5

1.2

- On-ResistanceR (Normalized)

DS(on)

0.9

VGS=4.5V

0.6

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

VGS=10V

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New Product

Si4435DDY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

TJ= 150 °C

1

0.1

- Source Current (A)

S

I

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-Source-to-Drain Voltage (V)

V

SD

Source-Drain Diode Forward Voltage

0.6

0.4

ID= 250 µA

0.2

Variance (V)V

GS(th)

0.0

TJ= 25 °C

TJ= - 50 °C

ID=1mA

0.06

0.05

0.04

0.03

- On-Resistance (Ω)

0.02

DS(on)

R

0.01

0

012345678 910

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ= 25 °C

On-Resistance vs. Gate-to-Source Voltage

100

80

60

Power (W)

40

20

ID=9.1A

- 0.2

- 50 - 25 0 25 50 75 100 125 150

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TJ- Temperature (°C)

Threshold Voltage

- Drain Current (A)

D

I

0.01

0

Single Pulse Power, Junction-to-Ambient

100

Limited byR

10

1

0.1 TA= 25 °C

Single Pulse

0.1 1 10 100

> minimum VGSat which R

* V

GS

*

DS(on)

BVDSS Limited

V

- Drain-to-Source Voltage (V)

DS

DS(on)

100 µs

1ms

10 ms

100 ms

1s 10 s

100 s, DC

is specified

Safe Operating Area

0.1

Time (s)

Document Number: 68841

S09-0863-Rev. C, 18-May-09

011100.00.01

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

15

12

9

6

- Drain Current (A)

D

I

3

0

0 25 50 75 100 125 150

- Case Temperature (°C)

T

C

Current Derating*

Si4435DDY

Vishay Siliconix

6.0

4.8

3.6

Power (W)

2.4

1.2

0.0 0255075100125150

- Case Temperature (°C)

T

C

Power, Junction-to-Foot

* The power dissipation PD is based on T dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

2.0

1.6

1.2

Power (W)

0.8

0.4

0.0 0 25 50 75 100 125 150

-Ambient Temperature (°C)

T

A

Power Derating, Junction-to-Ambient

limit.

Document Number: 68841 S09-0863-Rev. C, 18-May-09

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New Product

Si4435DDY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

0.2

Normalized Effective Transient

0.1

0.05

Thermal Impedance

0.02

Single Pulse

0.01

-4

10

-3

10

-2

10

-1

Notes:

P

DM

t

1

t

- TA=PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface M ounted

100

thJA

t

1

t

2

= 85 °C/W

(t)

000110110

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

1

Duty Cycle = 0.5

0.2

0.1

Thermal Impedance

0.05

0.02

Single Pulse

0.01

-4

10

-3

10

-2

10

-1

01110

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68841

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.

Document Number: 68841

S09-0863-Rev. C, 18-May-09

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

Package Information

Vishay Siliconix

D

e

BA

1

DIM

A 1.35 1.75 0.053 0.069

A

1

B 0.35 0.51 0.014 0.020

C 0.19 0.25 0.0075 0.010

D 4.80 5.00 0.189 0.196

E 3.80 4.00 0.150 0.157

e 1.27 BSC 0.050 BSC

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.50 0.93 0.020 0.037

q0°8°0°8°

S 0.44 0.64 0.018 0.026

ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498

8

1

0.25 mm (Gage Plane)

A

6

7

2

5

HE

3

4

S

h x 45

C

L

MILLIMETERS INCHES

Min Max Min Max

0.10 0.20 0.004 0.008

All Leads

q

0.101 mm

0.004"

Document Number: 71192 11-Sep-06

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Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172

(4.369)

0.028

(0.711)

Return to Index

0.022

(0.559)

0.246 (6.248)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.270)

0.152

0.047

(3.861)

(1.194)

APPLICATION NOTE

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Legal Disclaimer Notice

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Vishay

Disclaimer



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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

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Revision: 08-Feb-17

1

Document Number: 91000