VISHAY Si1553DL Technical data

PRODUCT SUMMARY

C/W

Si1553DL

Vishay Siliconix

Complementary 2.5-V (G-S) MOSFET

V

DS

N-Channel 20

P-Channel -20

(V) r

0.385 @ VGS = 4.5 V "0.70

0.630 @ VGS = 2.5 V "0.54

0.995 @ VGS = -4.5 V "0.44

1.800 @ VGS = -2.5 V "0.32

(W) I

DS(on)

(A)

D

SOT-363

SC-70 (6-LEADS)

1

S

1

2

G

1

3

D

2

Top View

6

D

1

5

G

2

S

4

2

Marking Code

RA XX

Part # Code

YY

Lot Traceability
and Date Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol

Drain-Source Voltage V
Gate-Source Voltage V

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I
Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

TA = 25_C "0.70 "0.66 "0.44 "0.41
TA = 85_C

a

TA = 25_C 0.30 0.27 0.30 0.27
TA = 85_C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71078
S-21374—Rev. D, 12-Aug-02

a

t v 5 sec 360 415

Steady State

N-Channel P-Channel

5 secs Steady State 5 secs Steady State

DS
GS

I

D

DM

I

S

P

D

stg

"0.50 "0.48 "0.31 "0.30

0.25 0.23 -0.25 -0.23

0.16 0.14 0.16 0.14

20 -20

"12

"1.0

-55 to 150 _C

R

thJA

thJF

400 460
300 350

Unit

V

A

W

_C/W

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Si1553DL

W

^

W

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

a

a

a

a

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

fs

SD

Dynamicb

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain

Source-Drain
Reverse Recovery Time

Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.

300 ms, duty cycle v 2%.

d(on)

d(off)

t

rr

g

gs

gd

r

f

VDS = VGS, I

VDS = VGS, I

VDS = 0 V, VGS = "12 V

= 250 mA N-Ch 0.6

D

= -250 mA P-Ch -0.6

D

N-Ch "100
P-Ch "100

VDS = 16 V, VGS = 0 V N-Ch 1

VDS = -16 V, VGS = 0 V P-Ch -1

VDS = 16 V, VGS = 0 V, TJ = 85_C N-Ch 5

VDS = -16 V, VGS = 0 V, TJ = 85_C P-Ch -5

VDS w 5 V, VGS = 4.5 V N-Ch 1.0

VDS p -5 V, VGS = -4.5 V P-Ch -1.0

VGS = 4.5 V, ID = 0.66 A N-Ch 0.320 0.385

VGS = -4.5 V, ID = -0.41 A P-Ch 0.850 0.995

VGS = 2.5 V, ID = 0.40 A N-Ch 0.560 0.630

VGS = -2.5 V, ID = -0.25 A P-Ch 1.4 1.800

VDS = 10 V, ID = 0.66 A N-Ch 1.5

VDS = -10 V, ID = -0.41 A P-Ch 0.8

IS = 0.23 A, VGS = 0 V N-Ch 0.8 1.2

IS = -0.23 A, VGS = 0 V P-Ch -0.8 -1.2

N-Ch 0.8 1.2

N-Channel

V

DS

V

= -10 V, VGS = -4.5 V, ID = -0.41 A

DS

N-Channel

= 10 V, VGS = 4.5 V, ID = 0.66 A

P-Channel

P-Ch 1.2 1.8
N-Ch 0.06
P-Ch 0.45
N-Ch 0.30
P-Ch 0.25
N-Ch 10 20
P-Ch 7.5 15

VDD = 10 V, RL = 20

ID ^ 0.5 A, V

V

= -10 V, RL = 20 W

DD

I ^ -0.5 A, V

I

-0.5 A, V

D

N-Channel

= 4.5 V, RG = 6 W

GEN

P-Channel

P-Channel

= -4.5 V, R = 6 W

= -4.5 V, RG = 6

GEN

N-Ch 16 30
P-Ch 20 40
N-Ch 10 20
P-Ch 8.5 17
N-Ch 10 20
P-Ch 12 24

IF = 0.23 A, di/dt = 100 A/ms N-Ch 20 40

IF = -0.23 A, di/dt = 100 A/ms P-Ch 25 40

V

nA

mA

A

W

S

V

nC

ns

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Document Number: 71078

S-21374—Rev. D, 12-Aug-02

Si1553DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL

1.0
VGS = 5 thru 2.5 V

0.8

0.6

0.4

- Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

1.0

W )

0.8

Output Characteristics Transfer Characteristics

0.6

VGS = 2.5 V

2 V

1.5 V
1 V

1.0

0.8

0.6

0.4

- Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)

TC = 125_C

25_C

Capacitance

100

80

C

60

iss

-55_C

- On-Resistance (r

0.4

DS(on)

0.2

0.0

0.0 0.2 0.4 0.6 0.8 1.0

- Drain Current (A)

I

D

Gate Charge

5

VDS = 10 V
I

= 0.66 A

D

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

0

0.0 0.2 0.4 0.6 0.8
Qg - Total Gate Charge (nC)

VGS = 4.5 V

40

C - Capacitance (pF)

20

C

0

048121620

C

oss

rss

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

1.6
VGS = 4.5 V

I

= 0.66 A

W)

1.4

1.2

(Normalized)

- On-Resistance (r

1.0

DS(on)

0.8

0.6

D

-50 -25 0 25 50 75 100 125 150
T

- Junction Temperature (_C)

J

Document Number: 71078
S-21374—Rev. D, 12-Aug-02

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